公开(公告)号：US20110188532A1

公开(公告)日：2011-08-04

申请号：US13020080

申请日：2011-02-03

申请人： Masayuki HATA ,  Yasuhiko NOMURA ,  Yasuyuki BESSHO

发明人： Masayuki HATA ,  Yasuhiko NOMURA ,  Yasuyuki BESSHO

IPC分类号： H01S5/40 ,  H01S5/323

CPC分类号： H01S5/323 ,  H01S5/40

摘要： This semiconductor laser apparatus includes a first semiconductor laser device having a first surface and a second surface, an integrated laser device formed by a second semiconductor laser device and a third semiconductor laser device having a third surface and a fourth surface, and a support substrate. The third surface is bonded onto a first region of the support substrate, a first section of the first surface overlaps with at least part of the fourth surface, and a second section of the first surface is bonded to a second region of the support substrate.

摘要翻译： 该半导体激光装置包括具有第一表面和第二表面的第一半导体激光器件，由第二半导体激光器件形成的集成激光器件和具有第三表面和第四表面的第三半导体激光器件以及支撑衬底。 第三表面结合到支撑基板的第一区域上，第一表面的第一部分与第四表面的至少一部分重叠，第一表面的第二部分结合到支撑基板的第二区域。

公开(公告)号：US20100302775A1

公开(公告)日：2010-12-02

申请号：US12726415

申请日：2010-03-18

申请人： Masayuki HATA

发明人： Masayuki HATA

IPC分类号： F21V9/00 ,  H01S5/40 ,  H01L33/00

CPC分类号： H01S5/4025 ,  B82Y20/00 ,  H01L25/0753 ,  H01L25/0756 ,  H01L27/153 ,  H01L33/20 ,  H01L33/24 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H04N9/3155 ,  H04N9/3161

摘要： This light-emitting device includes a waveguide-type red semiconductor light-emitting element emitting a red beam, a waveguide-type green semiconductor light-emitting element emitting a green beam and a waveguide-type blue semiconductor light-emitting element emitting a blue beam, while the width of a waveguide of the semiconductor light-emitting element emitting a beam of a relatively short wavelength is rendered larger than the width of a waveguide of the semiconductor light-emitting element emitting a beam of a relatively long wavelength in at least two semiconductor light-emitting elements among the red semiconductor light-emitting element, the green semiconductor light-emitting element and the blue semiconductor light-emitting element.

摘要翻译： 该发光装置包括发射红色光束的波导型红色半导体发光元件，发射绿色光束的波导型绿色半导体发光元件和发射蓝色光束的波导型蓝色半导体发光元件 而发射相对较短波长的光束的半导体发光元件的波导的宽度比在至少两个发射波长较长的光束的半导体发光元件的波导的宽度大 红色半导体发光元件，绿色半导体发光元件和蓝色半导体发光元件中的半导体发光元件。

公开(公告)号：US20100080000A1

公开(公告)日：2010-04-01

申请号：US12565670

申请日：2009-09-23

申请人： Daijiro INOUE ,  Yasuyuki BESSHO ,  Masayuki HATA

发明人： Daijiro INOUE ,  Yasuyuki BESSHO ,  Masayuki HATA

IPC分类号： G02B27/18 ,  H01S3/23 ,  H01S3/04

CPC分类号： H04N9/3161 ,  G03B21/2033 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/02484 ,  H01S5/4031 ,  H01S5/4093 ,  H04N9/3105 ,  H04N9/3111

摘要： A laser diode device includes a red laser diode element, a green laser diode element and a blue laser diode element. The red, green and blue laser diode elements are arranged in a single package in a state of being connected to wires for supplying power independently. Additionally, the blue laser diode element is arranged between the red laser diode element and the green laser diode element as viewed from a laser beam-emitting direction.

摘要翻译： 激光二极管器件包括红色激光二极管元件，绿色激光二极管元件和蓝色激光二极管元件。 红色，绿色和蓝色激光二极管元件被布置在单个封装中，处于连接到用于独立供电的导线的状态。 此外，从激光束发射方向观察，蓝色激光二极管元件布置在红色激光二极管元件和绿色激光二极管元件之间。

公开(公告)号：US20100025701A1

公开(公告)日：2010-02-04

申请号：US12576813

申请日：2009-10-09

申请人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

发明人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/3063 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

摘要翻译： 描述了能够抑制特性降低和产量的氮化物半导体发光器件及其制造方法。 制造方法包括以下步骤：通过选择性地除去与氮化物基半导体衬底的发光部分相对应的第一区域以外的氮化物系半导体衬底的第二区域的规定区域，在氮化物系半导体衬底上形成沟槽部 氮化物基半导体层直到规定的深度，并且在氮化物基半导体衬底的第一区域和沟槽部分上形成具有与氮化物基半导体衬底不同的组成的氮化物基半导体层。

公开(公告)号：US20090238230A1

公开(公告)日：2009-09-24

申请号：US12476677

申请日：2009-06-02

申请人： Yasuyuki BESSHO ,  Masayuki HATA ,  Daijiro INOUE

发明人： Yasuyuki BESSHO ,  Masayuki HATA ,  Daijiro INOUE

IPC分类号： H01S5/40

CPC分类号： H01S5/4043 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4087 ,  H01L2924/00014

摘要： A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.

摘要翻译： 红色半导体激光器件中的p型焊盘电极和第一端子通过导线连接。 红外半导体激光器件中的p型焊盘电极和第二端子通过导线连接。 蓝紫色半导体激光器件中的p电极和第三端子通过导线连接。 蓝紫色半导体激光器件中的n电极对安装件进行导电。 红外半导体激光器件中的n电极和安装件通过导线连接，而红外半导体激光器件中的n电极和安装座通过导线连接。 安装座内有第四个终端。

公开(公告)号：US20090116529A1

公开(公告)日：2009-05-07

申请号：US12348573

申请日：2009-01-05

申请人： Masayuki HATA ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

发明人： Masayuki HATA ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

IPC分类号： H01S5/00

CPC分类号： H01S5/4043 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4087 ,  H01L2924/00014

摘要： A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

摘要翻译： 单片红/红外半导体激光器件连接到蓝紫色半导体激光器件。 蓝紫色半导体激光装置中的蓝紫色发射点与红外线半导体激光装置的红外线发射点之间的距离明显短于红色半导体激光装置的红色发射点与红外线发射点 。 从蓝紫色发射点，红色发射点和红外线发射点分别发射的蓝紫色激光束，红色激光束和红外激光束被入射到光盘上之后被引入光电检测器 包括偏振分束器，准直透镜，光束扩展器，λ/ 4板，物镜，柱面透镜和光轴校正元件的光学系统。