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    Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal
    12.
    发明授权
    Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal 有权
    生产氮化铝晶体的方法，用于生产氮化铝晶体的方法和氮化铝晶体

    公开(公告)号：US08323402B2

    公开(公告)日：2012-12-04

    申请号：US12595957

    申请日：2008-12-19

    申请人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    发明人： Keisuke Tanizaki ,  Naho Mizuhara ,  Michimasa Miyanaga ,  Hideaki Nakahata ,  Yoshiyuki Yamamoto

    IPC分类号： C30B1/10

    CPC分类号： C30B29/403 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658

    摘要： Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.

    摘要翻译： 生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。 防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。 氮化铝晶体生长方法包括以下步骤。 首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。 然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。 第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。 第二层由导热率高于第一层的物质制成。

    Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method
    17.
    发明申请
    Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method 有权
    复合半导体单晶制造装置及制造方法

    公开(公告)号：US20100319614A1

    公开(公告)日：2010-12-23

    申请号：US12668426

    申请日：2009-03-06

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    IPC分类号： C30B23/06 ,  C30B23/00

    CPC分类号： C30B23/066 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0254

    摘要： A compound semiconductor single-crystal manufacturing device (1) is furnished with: a laser light source (6) making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel (2) having a laser entry window (5) through which the laser beam output from the laser light source (6) can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate (3) where sublimed source material is recrystallized; and a heater (7) making it possible to heat the starting substrate (3). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (2), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (3); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate (3).

    摘要翻译： 化合物半导体单晶制造装置（1）具有：激光光源（6），其可以通过将激光束引导到材料上来升高源材料; 具有激光入口窗口（5）的反应容器（2），从激光光源（6）输出的激光束可以通过激光入口窗口（5）传输，以将光束引入容器内部，并且能够保持起始衬底（ 3）升华源材料重结晶; 和加热器（7），使加热起始衬底（3）成为可能。 激光束照射在反应容器（2）内的源材料上，从而升华，通过将升华的源材料再结晶到起始衬底（3）上来生长化合物半导体单晶; 之后使用激光束将化合物半导体单晶与起始衬底（3）分离。

    Compound semiconductor single-crystal manufacturing device and manufacturing method
    19.
    发明授权
    Compound semiconductor single-crystal manufacturing device and manufacturing method 有权
    复合半导体单晶制造装置及其制造方法

    公开(公告)号：US08591653B2

    公开(公告)日：2013-11-26

    申请号：US12668426

    申请日：2009-03-06

    申请人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Michimasa Miyanaga ,  Takashi Sakurada ,  Hideaki Nakahata

    IPC分类号： C30B21/02

    CPC分类号： C30B23/066 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0254

    摘要： A compound semiconductor single-crystal manufacturing device (1) is furnished with: a laser light source (6) making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel (2) having a laser entry window (5) through which the laser beam output from the laser light source (6) can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate (3) where sublimed source material is recrystallized; and a heater (7) making it possible to heat the starting substrate (3). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel (2), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate (3); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate (3).

    摘要翻译： 化合物半导体单晶制造装置（1）具有：激光光源（6），其可以通过将激光束引导到材料上而使源材料升华; 具有激光入口窗口（5）的反应容器（2），从激光光源（6）输出的激光束可以通过激光入口窗口（5）传输，以将光束引入容器内部，并且能够保持起始衬底（ 3）升华源材料重结晶; 和加热器（7），使加热起始衬底（3）成为可能。 激光束照射在反应容器（2）内的源材料上，从而升华，通过将升华的源材料再结晶到起始衬底（3）上来生长化合物半导体单晶; 之后使用激光束将化合物半导体单晶与起始衬底（3）分离。