公开(公告)号：US20130302981A1

公开(公告)日：2013-11-14

申请号：US13941747

申请日：2013-07-15

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton J. deVilliers ,  Jianming Zhou ,  Yuan He ,  Michael D. Hyatt ,  Scott L. Light

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

Abstract translation: 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。

公开(公告)号：US09184058B2

公开(公告)日：2015-11-10

申请号：US14139582

申请日：2013-12-23

Applicant: Micron Technology, Inc. ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L21/308

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract translation: 一些实施例包括形成图案的方法。 在材料上形成第一个掩模。 第一掩模具有在其中延伸的特征并且限定第一图案。 第一种模式在特征分布上具有第一级的均匀性。 在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。 所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。 图案从第二个掩模转移到材料中。

公开(公告)号：US09096730B2

公开(公告)日：2015-08-04

申请号：US14220892

申请日：2014-03-20

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Scott E. Sills

IPC: C03C15/00 ,  C08J7/02 ,  B81C1/00 ,  C09D7/00 ,  H01L21/033 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/266

CPC classification number: C08J7/02 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  C09D7/20 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/266

Abstract: Some embodiments include methods of forming patterns. A block copolymer film may be formed over a substrate, with the block copolymer having an intrinsic glass transition temperature (Tg,0) and a degradation temperature (Td). A temperature window may be defined to correspond to temperatures (T) within the range of Tg,0≦T≦Td. While the block copolymer is in the upper half of the temperature window, solvent may be dispersed into the block copolymer to a process volume fraction that induces self-assembly of the block copolymer into a pattern. A defect specification may be defined, and the process volume fraction of solvent may be at level that achieves self-assembly within the defect specification. In some embodiments, the solvent may be removed from within the block copolymer while maintaining the defect specification.

Abstract translation: 一些实施例包括形成图案的方法。 可以在基材上形成嵌段共聚物膜，其中嵌段共聚物具有本征玻璃化转变温度（Tg，0）和降解温度（Td）。 可以将温度窗口定义为对应于在Tg，0＆amp; nlE; T＆nlE; Td的范围内的温度（T）。 当嵌段共聚物在温度窗口的上半部分时，溶剂可以分散到嵌段共聚物中，达到引起嵌段共聚物自组装成图案的工艺体积分数。 可以定义缺陷规格，并且溶剂的处理体积分数可以达到在缺陷规格内实现自组装的水平。 在一些实施方案中，可以在保持缺陷规格的同时从嵌段共聚物中除去溶剂。

公开(公告)号：US20140247476A1

公开(公告)日：2014-09-04

申请号：US14277323

申请日：2014-05-14

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Jianming Zhou ,  Scott L. Light ,  Anton deVilliers ,  Kaveri Jain ,  Zishu Zhang ,  Dan Millward

IPC: G02B26/06

CPC classification number: G02B26/06 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70258 ,  G03F7/70308 ,  G03F7/705 ,  G03F7/706

Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.

Abstract translation: 一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。 这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。 所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。 可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。 描述其他实施例。

公开(公告)号：US08815497B2

公开(公告)日：2014-08-26

申请号：US13941747

申请日：2013-07-15

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton J. deVillers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

IPC: G03F7/26

CPC classification number: H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

Abstract translation: 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。

公开(公告)号：US20140205752A1

公开(公告)日：2014-07-24

申请号：US14220892

申请日：2014-03-20

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Scott E. Sills

IPC: C08J7/02

CPC classification number: C08J7/02 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  C09D7/20 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/266

Abstract: Some embodiments include methods of forming patterns. A block copolymer film may be formed over a substrate, with the block copolymer having an intrinsic glass transition temperature (Tg,0) and a degradation temperature (Td). A temperature window may be defined to correspond to temperatures (T) within the range of Tg,0≦T≦Td. While the block copolymer is in the upper half of the temperature window, solvent may be dispersed into the block copolymer to a process volume fraction that induces self-assembly of the block copolymer into a pattern. A defect specification may be defined, and the process volume fraction of solvent may be at level that achieves self-assembly within the defect specification. In some embodiments, the solvent may be removed from within the block copolymer while maintaining the defect specification.

Abstract translation: 一些实施例包括形成图案的方法。 可以在基材上形成嵌段共聚物膜，其中嵌段共聚物具有本征玻璃化转变温度（Tg，0）和降解温度（Td）。 可以将温度窗口定义为对应于在Tg，0＆amp; nlE; T＆nlE; Td的范围内的温度（T）。 当嵌段共聚物在温度窗口的上半部分时，溶剂可以分散到嵌段共聚物中，达到引起嵌段共聚物自组装成图案的工艺体积分数。 可以定义缺陷规格，并且溶剂的处理体积分数可以达到在缺陷规格内实现自组装的水平。 在一些实施方案中，可以在保持缺陷规格的同时从嵌段共聚物中除去溶剂。