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    Semiconductor substrate for photonic and electronic structures and method of manufacture
    11.
    发明授权
    Semiconductor substrate for photonic and electronic structures and method of manufacture 有权
    用于光子和电子结构的半导体衬底及其制造方法

    公开(公告)号：US08815704B2

    公开(公告)日：2014-08-26

    申请号：US14151083

    申请日：2014-01-09

    Applicant: Micron Technology, Inc.

    Inventor： Roy Meade ,  Gurtej Sandhu

    IPC: H01L21/76 ,  H01L29/00

    CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

    Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

    Abstract translation: 提供了一种形成具有适用于电子和光子器件集成的隔离区的衬底的方法。 常用的掩模版和光刻技术用于制造掩模，其限定用于蚀刻衬底中的第一和第二沟槽隔离区的开口，其中用于第二沟槽隔离区的开口比第一沟槽隔离区的开口宽。 通过掩模在衬底中蚀刻第一和第二沟槽隔离区域。 第二沟槽隔离区域被进一步蚀刻到比第一沟槽隔离区域更深的位置。 沟槽隔离区填充氧化物材料。 电子器件可以形成在衬底上并由第一沟槽隔离区域电隔离，并且光子器件可以形成在第二沟槽隔离区域上并且与衬底光学隔离。

    PHOTONIC DEVICE AND METHODS OF FORMATION
    12.
    发明申请
    PHOTONIC DEVICE AND METHODS OF FORMATION 有权
    光电器件及其形成方法

    公开(公告)号：US20140153867A1

    公开(公告)日：2014-06-05

    申请号：US14176736

    申请日：2014-02-10

    Applicant: Micron Technology, Inc.

    Inventor： Gurtej Sandhu ,  Roy Meade

    IPC: G02B6/12 ,  G02B6/13

    CPC classification number: G02B6/12 ,  B82Y20/00 ,  G02B6/122 ,  G02B6/1223 ,  G02B6/1225 ,  G02B6/13 ,  G02B2006/121 ,  H01L2933/0083

    Abstract: A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.

    Abstract translation: 描述了提供在光子器件的衬底和内核之间提供减小的光学耦合的区域的光子器件和形成方法。 该区域由内芯和外包层中的孔形成。 孔可以填充提供光子晶体的材料。 因此，光子器件可以用作波导和光子晶体。

    Semiconductor substrate for photonic and electronic structures and method of manufacture
    13.
    发明授权
    Semiconductor substrate for photonic and electronic structures and method of manufacture 有权
    用于光子和电子结构的半导体衬底及其制造方法

    公开(公告)号：US08652934B1

    公开(公告)日：2014-02-18

    申请号：US13726891

    申请日：2012-12-26

    Applicant: Micron Technology, Inc.

    Inventor： Roy Meade ,  Gurtej Sandhu

    IPC: H01L21/76 ,  H01L29/00

    CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

    Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask and filled with an oxide material. The oxide material is removed from the bottom of the second trench isolation areas. The second trench isolation areas are further etched to the deeper than the first trench isolation areas, and are then filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

    Abstract translation: 提供了一种形成具有适用于电子和光子器件集成的隔离区的衬底的方法。 常用的掩模版和光刻技术用于制造限定用于蚀刻衬底中的第一和第二区域的开口的掩模，其中用于第二沟槽隔离区域的开口比第一沟槽隔离区域的开口宽。 通过掩模在衬底中蚀刻第一和第二沟槽隔离区域，并填充氧化物材料。 从第二沟槽隔离区域的底部去除氧化物材料。 第二沟槽隔离区进一步蚀刻到比第一沟槽隔离区更深的位置，然后用氧化物材料填充。 电子器件可以形成在衬底上并由第一沟槽隔离区域电隔离，并且光子器件可以形成在第二沟槽隔离区域上并且与衬底光学隔离。

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