公开(公告)号：US11990367B2

公开(公告)日：2024-05-21

申请号：US17444948

申请日：2021-08-12

Applicant: Micron Technology, Inc.

Inventor： Xiaosong Zhang ,  Yongjun J. Hu ,  David A. Kewley ,  Md Zahid Hossain ,  Michael J. Irwin ,  Daniel Billingsley ,  Suresh Ramarajan ,  Robert J. Hanson ,  Biow Hiem Ong ,  Keen Wah Chow

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/76843 ,  H01L21/76879 ,  H01L21/76804

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

公开(公告)号：US20210375670A1

公开(公告)日：2021-12-02

申请号：US17444948

申请日：2021-08-12

Applicant: Micron Technology, Inc.

Inventor： Xiaosong Zhang ,  Yongjun J. Hu ,  David A. Kewley ,  Md Zahid Hossain ,  Michael J. Irwin ,  Daniel Billingsley ,  Suresh Ramarajan ,  Robert J. Hanson ,  Biow Hiem Ong ,  Keen Wah Chow

IPC: H01L21/768

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

公开(公告)号：US11088017B2

公开(公告)日：2021-08-10

申请号：US16806312

申请日：2020-03-02

Applicant: Micron Technology, Inc.

Inventor： John B. Matovu ,  David S. Meyaard ,  Gowrisankar Damarla ,  Sri Sai Sivakumar Vegunta ,  Kunal Shrotri ,  Shashank Saraf ,  Kevin R. Gast ,  Jivaan Kishore Jhothiraman ,  Suresh Ramarajan ,  Lifang Xu ,  Rithu K. Bhonsle ,  Rutuparna Narulkar ,  Matthew J. King

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L21/3105 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11548

Abstract: A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material. Related methods of forming semiconductor structures and related semiconductor devices are disclosed.

公开(公告)号：US10374149B2

公开(公告)日：2019-08-06

申请号：US16006588

申请日：2018-06-12

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US09680089B1

公开(公告)日：2017-06-13

申请号：US15154033

申请日：2016-05-13

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US10720569B2

公开(公告)日：2020-07-21

申请号：US16434634

申请日：2019-06-07

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Johnathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US20180294403A1

公开(公告)日：2018-10-11

申请号：US16006588

申请日：2018-06-12

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US10062835B2

公开(公告)日：2018-08-28

申请号：US15588994

申请日：2017-05-08

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US20130228458A1

公开(公告)日：2013-09-05

申请号：US13863916

申请日：2013-04-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Suresh Ramarajan ,  Whonchee Lee

IPC: C25D17/00 ,  C25D17/12

CPC classification number: C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

Abstract: Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.