公开(公告)号：US20150372191A1

公开(公告)日：2015-12-24

申请号：US14737627

申请日：2015-06-12

Applicant: NGK Insulators, Ltd.

Inventor： Morimichi WATANABE ,  Katsuhiro IMAI ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI

IPC: H01L33/16 ,  H01L33/00 ,  H01L33/26 ,  H01L33/28 ,  H01L33/32

CPC classification number: H01L33/16 ,  H01L33/0008 ,  H01L33/0083 ,  H01L33/0095 ,  H01L33/26 ,  H01L33/28 ,  H01L33/285 ,  H01L33/325

Abstract: Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

Abstract translation: 提供一种面发光器件，其包括由板状取向多晶氧化锌烧结体构成的衬底，设置在衬底上的发光功能层和设置在发光功能层上的电极。 根据本发明，可以廉价地提供发光效率高的面发光装置。

公开(公告)号：US20130220988A1

公开(公告)日：2013-08-29

申请号：US13863729

申请日：2013-04-16

Applicant: NGK INSULATORS, LTD.

Inventor： Nobuyuki KONDO ,  Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA

IPC: H05B1/00

CPC classification number: H01L21/67 ,  B32B18/00 ,  C04B35/58 ,  C04B35/581 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/645 ,  C04B37/001 ,  C04B37/003 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3865 ,  C04B2235/5445 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/08 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C23C14/3414 ,  H01L21/6831 ,  H05B1/00 ,  H05B3/283 ,  Y10T428/24942

Abstract: A heating apparatus includes a susceptor having a heating face of heating a semiconductor and a supporting part joined with a back face of the susceptor. The susceptor comprises a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.

Abstract translation: 加热装置包括具有加热半导体的加热面的基座和与基座的背面接合的支撑部。 感受体包括以镁，铝，氧和氮为主要成分的陶瓷材料。 该材料包括主相，其包含通过CuKαX射线显示出至少2θ= 47°至50°的XRD峰的镁 - 铝氧氮化物相。

公开(公告)号：US20130023401A1

公开(公告)日：2013-01-24

申请号：US13624087

申请日：2012-09-21

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Yuji KATSUDA ,  Toru HAYASE ,  Asumi JINDO

IPC: C01F17/00 ,  C04B35/505 ,  C04B35/645 ,  C04B35/50

CPC classification number: C04B35/50 ,  C04B35/111 ,  C04B35/505 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/445 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/663 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/95 ,  C04B2235/96 ,  C04B2235/9669

Abstract: Initially, an Yb2O3 raw material was subjected to uniaxial pressure forming at a pressure of 200 kgf/cm2, so that a disc-shaped compact having a diameter of about 35 mm and a thickness of about 10 mm was produced, and was stored into a graphite mold for firing. Subsequently, firing was performed by using a hot-press method at a predetermined firing temperature (1,500° C.), so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The press pressure during firing was specified to be 200 kgf/cm2 and an Ar atmosphere was kept until the firing was finished. The retention time at the firing temperature (maximum temperature) was specified to be 4 hours. In this manner, the corrosion-resistant member for semiconductor manufacturing apparatus made from an Yb2O3 sintered body having an open porosity of 0.2% was obtained.

Abstract translation: 首先，将Yb 2 O 3原料在200kgf / cm 2的压力下进行单轴压力成形，制造直径约35mm，厚度约10mm的圆盘状压块，并将其储存在 石墨模具用于烧制。 接着，在规定的烧成温度（1500℃）下，使用热压法进行烧成，得到半导体制造装置的耐腐蚀部件。 烧成时的加压压力为200kgf / cm 2，保持Ar气氛直至烧成结束。 烧成温度（最高温度）的保持时间为4小时。 以这种方式，获得了由具有0.2％的开孔率的Yb2O3烧结体制成的用于半导体制造装置的耐腐蚀构件。

公开(公告)号：US20240376635A1

公开(公告)日：2024-11-14

申请号：US18779382

申请日：2024-07-22

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroharu KOBAYASHI ,  Hirohisa OGAWA ,  Morimichi WATANABE

IPC: C30B29/40 ,  H01L29/20

Abstract: There is provided an AlN single-crystal substrate satisfying a relation: 5≤[(λ25−λ200)×log10 ρ]/(T640-660−T260-280)≤50, wherein λ25 is a thermal conductivity (W/m·K) at 25° C. of the AlN single-crystal substrate; λ200 is a thermal conductivity (W/m·K) at 200° C. of the AlN single-crystal substrate; ρ is an electrical resistivity (Ω·cm) at 25° C. of the AlN single-crystal substrate; T640-660 is an average value of transmittance (%) at 640 to 660 nm in a transmission spectrum of the AlN single-crystal substrate; and T260-280 is an average value of transmittance (%) at 260 to 280 nm in the transmission spectrum.

公开(公告)号：US20230392290A1

公开(公告)日：2023-12-07

申请号：US18455054

申请日：2023-08-24

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroharu KOBAYASHI ,  Hirohisa OGAWA ,  Morimichi WATANABE

IPC: C30B29/40 ,  H01L21/02 ,  C30B29/68

CPC classification number: C30B29/403 ,  H01L21/02389 ,  H01L21/02428 ,  C30B29/68

Abstract: Provided is an AlN single crystal substrate having a three-layer structure composed of one AlN single crystal as a whole and is classifiable into the first layer, the second layer, and the third layer in this order in the thickness direction in terms of defect density, wherein the second layer has a defect density of 10 times or more the defect density of each of the first layer and the third layer.

公开(公告)号：US20230231013A1

公开(公告)日：2023-07-20

申请号：US18181636

申请日：2023-03-10

Applicant: NGK Insulators, Ltd.

Inventor： Hiroshi FUKUI ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC: H01L29/06 ,  H01L21/02 ,  C30B29/16 ,  C30B29/68

CPC classification number: H01L29/0657 ,  H01L21/02565 ,  C30B29/16 ,  C30B29/68 ,  H01L29/04

Abstract: A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of α-Ga2O3 or an α-Ga2O3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 μm. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 μm or greater and 64 μm or less.

公开(公告)号：US20220238645A1

公开(公告)日：2022-07-28

申请号：US17653146

申请日：2022-03-02

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroshi FUKUI ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC: H01L29/06 ,  H01L29/24 ,  H01L29/04 ,  C23C16/40

Abstract: An α-Ga2O3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

公开(公告)号：US20210408242A1

公开(公告)日：2021-12-30

申请号：US17467943

申请日：2021-09-07

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Hiroshi FUKUI

IPC: H01L29/24 ,  H01L29/04 ,  H01L21/02

Abstract: Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, and an impurity concentration and/or a heterogeneous phase amount differ between a front surface and a rear surface of the semiconductor film.

公开(公告)号：US20210384145A1

公开(公告)日：2021-12-09

申请号：US17445505

申请日：2021-08-20

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA ,  Morimichi WATANABE ,  Risa MIYAKAZE

IPC: H01L23/00 ,  H01L29/04 ,  H01L29/32 ,  H01L29/16

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate.

公开(公告)号：US20180351038A1

公开(公告)日：2018-12-06

申请号：US16059250

申请日：2018-08-09

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Kei Sato ,  Yoshitaka Kuraoka ,  Katsuhiro Imai ,  Tsutomu Nanataki

IPC: H01L33/18 ,  C30B29/40 ,  H01L33/32 ,  H01L33/36

Abstract: There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1° or more and less than 1° and the cross-sectional average diameter DT of the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 μm or more.