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    ORIENTED CERAMIC SINTERED BODY PRODUCTION METHOD AND FLAT SHEET
    1.
    发明申请
    ORIENTED CERAMIC SINTERED BODY PRODUCTION METHOD AND FLAT SHEET 审中-公开

    公开(公告)号：US20200216364A1

    公开(公告)日：2020-07-09

    申请号：US16818025

    申请日：2020-03-13

    Applicant: NGK INSULATORS, LTD.

    Inventor： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Takahiro MAEDA ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI

    IPC: C04B35/645 ,  C04B35/111

    Abstract: An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm2, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a maximum profile height Pt of 0.8 μm or less.

    POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME
    2.
    发明申请
    POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME 审中-公开
    多晶硅氮化物自支撑基板和使用相同的发光元件

    公开(公告)号：US20170077349A1

    公开(公告)日：2017-03-16

    申请号：US15359813

    申请日：2016-11-23

    Applicant: NGK INSULATORS, LTD.

    Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Yoshitaka KURAOKA ,  Tsutomu NANATAKI

    IPC: H01L33/18 ,  H01L33/00 ,  H01L33/06 ,  C30B19/02 ,  C30B29/40 ,  C30B25/18 ,  C30B9/12 ,  C30B28/04 ,  C30B29/60 ,  H01L33/32 ,  C30B19/12

    CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

    Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

    Abstract translation: 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。

    POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME
    6.
    发明申请
    POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME 有权
    多晶硅氮化物自支撑基板和使用相同的发光元件

    公开(公告)号：US20160197234A1

    公开(公告)日：2016-07-07

    申请号：US15072745

    申请日：2016-03-17

    Applicant: NGK INSULATORS, LTD.

    Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Yoshitaka KURAOKA ,  Tsutomu NANATAKI

    IPC: H01L33/18 ,  H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

    Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

    Abstract translation: 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。

    CRYSTAL PRODUCTION METHOD
    9.
    发明申请
    CRYSTAL PRODUCTION METHOD 有权
    水晶生产方法

    公开(公告)号：US20130263771A1

    公开(公告)日：2013-10-10

    申请号：US13866185

    申请日：2013-04-19

    Applicant: NGK INSULATORS, LTD.

    Inventor： Nobuyuki KOBAYASHI ,  Kazuki MAEDA ,  Koichi KONDO ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Jun YOSHIKAWA

    IPC: C30B1/04

    CPC classification number: C30B1/04 ,  C23C4/12 ,  C23C4/123 ,  C23C24/04 ,  C30B1/00 ,  C30B29/406

    Abstract: A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.

    Abstract translation: 根据本发明的晶体制造方法包括：成膜和结晶步骤，其以预定的单一结晶温度喷涂含有原料组分的原料粉末，以在含有单晶的种子基材上形成含有原料成分的膜 在其中发生单一结晶的原料组分，并且在保持单一结晶温度的同时使包含原料的膜结晶。 在成膜和结晶步骤中，优选单结晶温度为900℃以上。 此外，在成膜和结晶步骤中，原料粉末和种子基材优选为氮化物或氧化物。

    SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE
    10.
    发明申请
    SIC SUBSTRATE AND SIC COMPOSITE SUBSTRATE 有权

    公开(公告)号：US20250126865A1

    公开(公告)日：2025-04-17

    申请号：US18989246

    申请日：2024-12-20

    Applicant: NGK INSULATORS, LTD.

    Inventor： Yuki URATA ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA

    IPC: H10D62/832 ,  C30B29/36

    Abstract: There is provided a SiC substrate including a biaxially oriented SiC layer, and the SiC substrate and the biaxially oriented SiC layer have an off angle. With regard to this SiC substrate, in an XRT image obtained by subjecting a certain 4 mm-square region in the biaxially oriented SiC layer to X-ray topography (XRT) measurement, with respect to a total number of basal plane dislocations (BPD), a percentage of the number of BPDs such that an absolute value of an acute angle between a BPD extension direction and the [11-20] direction is 15° or less is 60% or more. The BPD extension direction is defined as a direction of a line segment connecting an end point of a BPD observed as a linear shape and a point 150 μm away from the end point along the linear BPD in the XRT image.

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