HONEYCOMB STRUCTURE AND METHOD OF PRODUCING HONEYCOMB STRUCTURE

    公开(公告)号:US20250024565A1

    公开(公告)日:2025-01-16

    申请号:US18735632

    申请日:2024-06-06

    Abstract: A honeycomb structure includes a base material that is a tubular member and provided with a plurality of cells extending from one end face to the other end face, and a coating layer provided on a surface of a target cell that is at least one of the plurality of cells, the coating layer being formed by magnetic particles bonded to one another. The coating layer contains at least one element selected from among Si, Al, and Mg as an additional element(s). In the coating layer, the ratio of the sum of the weight fraction(s) of the additional element(s) to the sum of the weight fraction(s) of a main constituent element(s) of the magnetic particles is higher than or equal to 1.7 wt %.

    HONEYCOMB STRUCTURE AND METHOD OF PRODUCING HONEYCOMB STRUCTURE

    公开(公告)号:US20200308068A1

    公开(公告)日:2020-10-01

    申请号:US16822482

    申请日:2020-03-18

    Abstract: A honeycomb structure has a plurality of cells formed by a plurality of partition walls. The partition walls are formed of a porous material composed predominantly of cordierite. Each partition wall includes surface layer portions having a porosity of 50% or more and an inside portion having a porosity of 50% or more, the surface layer portions being portions ranging respectively from opposite surfaces to a depth corresponding to 25% of the thickness of the partition wall, and the inside portion being the other portion. The surface layer portions and the inside portion both include pores having axial pore widths of less than 30 μm and pores having axial pore widths of 30 μm or more. A mean axial pore width in the surface layer portions is smaller than a mean axial pore width in the inside portion.

    CORROSION-RESISTANT MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    CORROSION-RESISTANT MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体制造装置用耐腐蚀构件及其制造方法

    公开(公告)号:US20130022526A1

    公开(公告)日:2013-01-24

    申请号:US13624119

    申请日:2012-09-21

    Abstract: A mixed powder was prepared by weighing Yb2O3 and SrCO3 in such a way that the molar ratio became 1:1. The resulting mixed powder was subjected to uniaxial pressure forming, so as to produce a disc-shaped compact. The compact was heat-treated in an air atmosphere, so that a complex oxide was synthesized. The resulting complex oxide was pulverized. After the pulverization, a slurry was taken out and was dried in a nitrogen gas stream, so as to produce a synthesized powder material. The resulting synthesized powder material was subjected to uniaxial pressure forming, so as to produce a disc-shaped compact. The resulting compact was fired by a hot-press method, so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The resulting corrosion-resistant member was made from a SrYb2O4.

    Abstract translation: 通过称量Yb2O3和SrCO3以使摩尔比为1:1的方式制备混合粉末。 将所得混合粉末进行单轴压力成形,以生成圆盘状压块。 在空气气氛中对压块进行热处理,合成复合氧化物。 将所得复合氧化物粉碎。 粉碎后,取出浆液,并在氮气流中干燥,得到合成粉末材料。 将所得合成的粉末材料进行单轴压力成形,以制造圆盘状压块。 通过热压法烧成所得的压坯,得到半导体制造装置的耐腐蚀构件。 得到的耐腐蚀构件由SrYb2O4制成。

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