公开(公告)号：US09679684B2

公开(公告)日：2017-06-13

申请号：US14662625

申请日：2015-03-19

Applicant: NGK Insulators, Ltd.

Inventor： Satoshi Yamazaki ,  Toru Hayase ,  Kenji Morimoto ,  Shinji Kawasaki ,  Yukihisa Takeuchi

IPC: H01C7/112 ,  C04B35/453 ,  H01C7/102 ,  H01C7/18 ,  H01C17/00 ,  H01C7/12 ,  C04B35/626 ,  C04B37/00 ,  H01C7/10

CPC classification number: H01C7/112 ,  C04B35/453 ,  C04B35/62695 ,  C04B37/005 ,  C04B37/006 ,  C04B2235/3217 ,  C04B2235/322 ,  C04B2235/3267 ,  C04B2235/3277 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/443 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/658 ,  C04B2235/6586 ,  C04B2235/661 ,  C04B2235/96 ,  C04B2237/06 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/34 ,  C04B2237/708 ,  C04B2237/72 ,  H01C7/10 ,  H01C7/1006 ,  H01C7/102 ,  H01C7/12 ,  H01C7/18 ,  H01C17/00 ,  Y10T29/49082

Abstract: A voltage nonlinear resistive element includes a resistor containing a joined body in which a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of 1.0×10−1 Ωcm or less is joined to a bismuth oxide layer composed mainly of bismuth oxide, and a pair of electrodes disposed on the resistor such that an electrically conductive path passes through a joint surface between the zinc oxide ceramic layer and the bismuth oxide layer. In this element, the zinc oxide ceramic layer of the joined body has a lower volume resistivity than before. This can result in a lower clamping voltage in a high-current region than before.

公开(公告)号：US10195597B2

公开(公告)日：2019-02-05

申请号：US15467117

申请日：2017-03-23

Applicant: NGK INSULATORS, LTD.

Inventor： Satoshi Yamazaki ,  Toru Hayase ,  Kenji Morimoto

IPC: B01D53/04 ,  B01J21/04 ,  B01J21/12 ,  B01J29/72 ,  B01J29/80 ,  B01J29/85 ,  B01J35/00 ,  B01J35/04 ,  B01J37/00 ,  B01J37/04 ,  B01J37/08 ,  B01J37/30 ,  B28B11/24 ,  B28B3/20 ,  B01J29/08 ,  B01J29/14 ,  B01J29/40 ,  B01J29/46 ,  B01J29/70 ,  B01J29/76 ,  B01J35/02 ,  B01J35/10 ,  B01D53/02 ,  B01D53/94

Abstract: The manufacturing method includes a step of mixing a coarse particle zeolite, a fine particle zeolite, and a raw material of an inorganic bonding material to prepare a zeolite raw material; a step of forming the prepared zeolite raw material into a honeycomb shape to prepare a honeycomb formed body; and a step of firing the prepared honeycomb formed body to prepare the honeycomb structure. In the step of preparing the zeolite raw material, as the coarse particle zeolite, a chabazite type zeolite having a specific average particle diameter, the fine particle zeolite having a specific average particle diameter, the raw material of the inorganic bonding material which includes at least basic aluminum lactate is used.

公开(公告)号：US10043604B2

公开(公告)日：2018-08-07

申请号：US15468630

申请日：2017-03-24

Applicant: NGK INSULATORS, LTD.

Inventor： Masaki Ishikawa ,  Toru Hayase ,  Yoshimasa Kobayashi ,  Kenji Morimoto

IPC: H01C7/18 ,  H01C17/30 ,  H01C7/102 ,  H01C7/112 ,  C04B35/453

CPC classification number: H01C7/18 ,  C04B35/453 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2111/00844 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3275 ,  C04B2235/3286 ,  C04B2235/3298 ,  C04B2235/5436 ,  C04B2235/5454 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/6583 ,  C04B2235/663 ,  C04B2235/75 ,  C04B2235/96 ,  C23C14/086 ,  C23C14/34 ,  H01C7/102 ,  H01C7/112 ,  H01C17/30 ,  C04B41/4556 ,  C04B41/5049 ,  C04B41/4529 ,  C04B41/5027

Abstract: A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.

公开(公告)号：US08679998B2

公开(公告)日：2014-03-25

申请号：US13624087

申请日：2012-09-21

Applicant: NGK Insulators, Ltd.

Inventor： Morimichi Watanabe ,  Yuji Katsuda ,  Toru Hayase ,  Asumi Jindo

IPC: C04B35/50 ,  C04B35/51 ,  C04B35/00 ,  A23B4/16

CPC classification number: C04B35/50 ,  C04B35/111 ,  C04B35/505 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/445 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/663 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/95 ,  C04B2235/96 ,  C04B2235/9669

Abstract: Initially, an Yb2O3 raw material was subjected to uniaxial pressure forming at a pressure of 200 kgf/cm2, so that a disc-shaped compact having a diameter of about 35 mm and a thickness of about 10 mm was produced, and was stored into a graphite mold for firing. Subsequently, firing was performed by using a hot-press method at a predetermined firing temperature (1,500° C.), so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The press pressure during firing was specified to be 200 kgf/cm2 and an Ar atmosphere was kept until the firing was finished. The retention time at the firing temperature (maximum temperature) was specified to be 4 hours. In this manner, the corrosion-resistant member for semiconductor manufacturing apparatus made from an Yb2O3 sintered body having an open porosity of 0.2% was obtained.

Abstract translation: 首先，将Yb 2 O 3原料在200kgf / cm 2的压力下进行单轴压力成形，制造直径约35mm，厚度约10mm的圆盘状压块，并将其储存在 石墨模具用于烧制。 接着，在规定的烧成温度（1500℃）下，使用热压法进行烧成，得到半导体制造装置的耐腐蚀部件。 烧成时的加压压力为200kgf / cm 2，保持Ar气氛直至烧成结束。 烧成温度（最高温度）的保持时间为4小时。 以这种方式，获得了由具有0.2％的开孔率的Yb2O3烧结体制成的用于半导体制造装置的耐腐蚀构件。