公开(公告)号：US12163249B2

公开(公告)日：2024-12-10

申请号：US17467895

申请日：2021-09-07

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Jun Yoshikawa

IPC: C30B29/40 ,  C30B25/18 ,  C30B29/16 ,  H01L21/02 ,  H01L29/24

Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, or a solid solution containing two or more selected from the group consisting of α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

公开(公告)号：US10435815B2

公开(公告)日：2019-10-08

申请号：US15902266

申请日：2018-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Kei Sato ,  Kiyoshi Matsushima ,  Tsutomu Nanataki

IPC: C30B29/00 ,  C30B29/20 ,  C04B35/111 ,  C30B19/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L21/683 ,  H01L33/00 ,  C30B1/12 ,  C30B19/12 ,  C30B28/02 ,  C04B35/622 ,  C04B35/634 ,  C04B35/638 ,  C04B35/645 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/16

Abstract: An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 0.1° or more and less than 1.0° and an average sintered grain size of 10 μm or more.

公开(公告)号：US10221076B2

公开(公告)日：2019-03-05

申请号：US15446539

申请日：2017-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroshi Fukui ,  Kei Sato ,  Morimichi Watanabe ,  Tsutomu Nanataki

IPC: C01F7/02 ,  C01F7/30 ,  C30B1/02 ,  C30B1/10 ,  C30B29/20 ,  C30B33/00 ,  C01F7/44 ,  C04B35/111 ,  C04B35/115 ,  C04B35/626

Abstract: A plate-like alumina powder production method of the present invention comprises placing a transition alumina and a fluoride in a container such that the transition alumina and the fluoride do not come into contact with each other and then performing heat treatment to obtain a plate-like α-alumina powder. The transition alumina is preferably at least one selected from the group consisting of gibbsite, boehmite, and γ-alumina. It is preferable that the amount of the fluoride used is set such that the percentage ration of F in the fluoride to the transition alumina is 0.17% by mass or more. The container preferably has a volume such that a value obtained by dividing the mass of F in the fluoride by the volume of the container is 6.5×10−5 g/cm3 or more. The heat treatment is preferably performed at the temperature of 750 to 1,650° C.

公开(公告)号：US09543473B2

公开(公告)日：2017-01-10

申请号：US15072745

申请日：2016-03-17

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Jun Yoshikawa ,  Yoshitaka Kuraoka ,  Tsutomu Nanataki

IPC: H01L33/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/16 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B29/40 ,  C30B25/18 ,  C30B28/04 ,  C30B29/60 ,  C30B9/00 ,  C30B25/20

CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.

Abstract translation: 本发明提供一种由大致垂直于基板的方向具有特定结晶取向的GaN系单晶粒构成的自支撑多晶GaN衬底。 通过在基板表面上的EBSD分析的反极图映射确定的单个GaN基单晶晶粒的晶体取向以特定晶体取向倾斜角分布，平均倾斜角为1至10°。 还提供了一种包括自支撑基板和发光功能层的发光器件，该发光功能层具有至少一层由半导体单晶晶粒构成的层，所述至少一层具有大致垂直于 底物。 本发明使得可以提供在衬底表面上具有降低的缺陷密度的自支撑多晶GaN衬底，并且提供具有高发光效率的发光器件。

公开(公告)号：US20160190392A1

公开(公告)日：2016-06-30

申请号：US15065994

申请日：2016-03-10

Applicant: NGK INSULATORS, LTD.

Inventor： Yoshitaka Kuraoka ,  Shohei Oue ,  Masahiko Namerikawa ,  Morimichi Watanabe

IPC: H01L33/32 ,  H01L33/20 ,  H01L33/58 ,  H01L33/06 ,  H01L33/18

CPC classification number: H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting device that is inexpensive, is easy to manufacture, and has high light extraction efficiency is provided. The light emitting device includes an oriented polycrystalline substrate, a plurality of columnar light emitting parts, and a light confinement layer. The oriented polycrystalline substrate includes a plurality of oriented crystal grains. The plurality of columnar light emitting parts are discretely located on or above one main surface of the oriented polycrystalline substrate in areas in which there are no crystal defects, and are each a columnar part having a longitudinal direction matching a normal direction of the oriented polycrystalline substrate. The light confinement layer is made of a material having a lower refractive index than a material for the plurality of columnar light emitting parts, and is located on or above the oriented polycrystalline substrate so as to surround the plurality of columnar light emitting parts.

Abstract translation: 廉价的发光器件易于制造，并且具有高的光提取效率。 发光器件包括定向多晶衬底，多个柱状发光部件和光限制层。 定向多晶基板包括多个定向晶粒。 多个柱状发光部分离散地位于不存在晶体缺陷的区域中的取向多晶基板的一个主表面的上方或上方，并且分别具有与取向多晶基板的法线方向一致的纵向方向的柱状部 。 光限制层由折射率低于多个柱状发光部的材料的材料构成，位于取向多晶基板的上方或上方，以包围多个柱状发光部。

公开(公告)号：US10460970B2

公开(公告)日：2019-10-29

申请号：US15903175

申请日：2018-02-23

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Tsutomu Nanataki

IPC: H01L21/683 ,  C04B35/111 ,  C04B35/101 ,  C04B35/634 ,  C04B35/64 ,  B32B18/00 ,  C04B35/626 ,  C04B35/638 ,  C04B35/645 ,  C04B37/00 ,  H01L21/687

Abstract: An electrostatic chuck includes a dielectric layer including an oriented alumina sintered body having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained by the irradiation of an X-ray in the 2θ range of 20° to 70°; a ceramic layer integrated with a surface disposed opposite a wafer placement surface of the dielectric layer; and an electrostatic electrode between the dielectric layer and the ceramic layer.

公开(公告)号：US10435816B2

公开(公告)日：2019-10-08

申请号：US15902294

申请日：2018-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Kei Sato ,  Kiyoshi Matsushima ,  Tsutomu Nanataki

IPC: C30B29/00 ,  C30B29/20 ,  C04B35/111 ,  C01F7/02 ,  C30B19/02 ,  C30B25/18 ,  H01L21/02 ,  H01L21/683 ,  H01L33/00 ,  C30B1/12 ,  C30B19/12 ,  C30B28/02 ,  C30B29/40 ,  C04B35/634 ,  C04B35/638 ,  C04B35/645 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.

公开(公告)号：US10427949B2

公开(公告)日：2019-10-01

申请号：US15909002

申请日：2018-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi Matsushima ,  Morimichi Watanabe ,  Kei Sato ,  Tsutomu Nanataki

IPC: C01F7/00 ,  C01F7/02 ,  C04B35/115 ,  G02B1/02 ,  C04B35/632 ,  C04B35/634 ,  C04B35/638 ,  C04B35/645 ,  H01L33/00

Abstract: An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 μm, and 25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.

公开(公告)号：US10343928B2

公开(公告)日：2019-07-09

申请号：US15446479

申请日：2017-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Hiroshi Fukui ,  Kei Sato ,  Tsutomu Nanataki

IPC: C01F7/30 ,  C04B35/626 ,  C30B1/02 ,  C30B29/20 ,  C30B29/64 ,  C01F7/44 ,  C04B35/111

Abstract: 96 parts by mass of a γ-alumina powder, 4 parts by mass of a an AlF3 powder, and 0.17 parts by mass of an α-alumina powder as a seed crystal were mixed by a pot mill. The purities of each raw material were evaluated, and it was found that the mass ratio of each impurity element other than Al, O, F, H, C, and S was 10 ppm or less. In a high-purity alumina-made sagger having a purity of 99.9 percent by mass, 300 g of the obtained mixed powder was received, and after a high-purity alumina-made lid having a purity of 99.9 percent by mass was placed on the sagger, a heat treatment was perforated at 900° C. for 3 hours in an electric furnace in an air flow atmosphere, so that an alumina powder was obtained. The value of AlF3 mass/container volume was 0.016 g/cm3.

公开(公告)号：US09768352B2

公开(公告)日：2017-09-19

申请号：US15359813

申请日：2016-11-23

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi Watanabe ,  Jun Yoshikawa ,  Yoshitaka Kuraoka ,  Tsutomu Nanataki

IPC: H01L33/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B28/04 ,  C30B29/40 ,  C30B29/60 ,  H01L33/16 ,  C30B9/00 ,  C30B25/20

CPC classification number: H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

Abstract: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.