公开(公告)号：US20150129924A1

公开(公告)日：2015-05-14

申请号：US14604453

申请日：2015-01-23

Applicant: NICHIA CORPORATION

Inventor： Masahiko ONISHI ,  Shun KITAHAMA

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/52

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

Abstract translation: 在制造半导体发光器件的方法中，形成具有不同导电类型的第一和第二半导体层的半导体层叠体; 去除半导体层叠的一部分以暴露第一半导体层的表面的区域; 形成连接第一和第二半导体层的导体层; 第一电极形成在第一半导体层的暴露区域上，第二电极形成在第二半导体层的上表面上; 形成覆盖第一和第二电极中的至少一个的阻挡层; 并且去除连接第一和第二半导体层的导体层中的连接部分。

公开(公告)号：US20240363802A1

公开(公告)日：2024-10-31

申请号：US18632870

申请日：2024-04-11

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA

IPC: H01L33/24 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/007

Abstract: A method of manufacturing a light emitting element includes: providing a semiconductor structure including: an n-side semiconductor layer, an active layer positioned on the n-side semiconductor layer, and a p-side semiconductor layer positioned on the active layer; forming a light-transmissive conducting layer including: a first layer positioned on a portion of the upper surface of the p-side semiconductor layer, and a second layer covering the upper surface of the p-side semiconductor layer and the first layer; forming an insulation film covering the second layer; removing a portion of the insulation film in a region that overlaps the first layer in a plan view to form a first opening in the insulation film and to thereby expose the light-transmissive conducting layer from the insulation film; and forming a first conducting layer in the first opening such that the first conductive layer is electrically connected to the light-transmissive conducting layer.

公开(公告)号：US20240079517A1

公开(公告)日：2024-03-07

申请号：US18507177

申请日：2023-11-13

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L21/268

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US20230343892A1

公开(公告)日：2023-10-26

申请号：US18343078

申请日：2023-06-28

Applicant: NICHIA CORPORATION

Inventor： Yoshiki INOUE ,  Shun KITAHAMA ,  Yoshiyuki AIHARA ,  Yoshiki MATSUSHITA ,  Keisuke HIGASHITANI

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/007 ,  H01L33/507 ,  H01L33/22 ,  H01L2933/0041

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US20210193867A1

公开(公告)日：2021-06-24

申请号：US17113583

申请日：2020-12-07

Applicant: NICHIA CORPORATION

Inventor： Yoshiki INOUE ,  Shun KITAHAMA ,  Yoshiyuki AIHARA ,  Yoshiki MATSUSHITA ,  Keisuke HIGASHITANI

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/50

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

公开(公告)号：US20180175238A1

公开(公告)日：2018-06-21

申请号：US15842655

申请日：2017-12-14

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA ,  Yoshiki INOUE ,  Kazuhiro NAGAMINE ,  Junya NARITA

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/38

CPC classification number: H01L33/0095 ,  H01L21/268 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0025

Abstract: A method for manufacturing a plurality of light emitting elements includes: providing a semiconductor wafer comprising: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer; forming a protective layer on an upper face of the p-side nitride semiconductor layer in regions that include borders of areas to become the plurality of light emitting elements; reducing a resistance of the p-side nitride semiconductor in areas where no protective layer has been formed by annealing the semiconductor wafer; irradiating a laser beam on the substrate so as to form modified regions in the substrate; and obtaining a plurality of light emitting elements by dividing the semiconductor wafer in which the modified regions have been formed in the substrate.

公开(公告)号：US20170186914A1

公开(公告)日：2017-06-29

申请号：US15388444

申请日：2016-12-22

Applicant: NICHIA CORPORATION

Inventor： Shun KITAHAMA

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016

Abstract: A method of manufacturing a light-emitting element includes forming a light-transmissive insulating film on a portion of an upper surface of a semiconductor layered body; forming a first light-transmissive electrode to continuously cover the upper surface of the semiconductor layered body and an upper surface of the light-transmissive insulating film; heat-treating the first light-transmissive electrode, and subsequently forming a metal film in at least a portion of a region above the light-transmissive insulating film; forming a second light-transmissive electrode to continuously cover an upper surface of the metal film and an upper surface of the first light-transmissive electrode, the second light-transmissive electrode being electrically connected to the first light-transmissive electrode; and forming a pad electrode in a region where the metal film is disposed in a top view, such that at least a portion of the pad electrode is in contact with an upper surface of the second light-transmissive electrode.

公开(公告)号：US20160020363A1

公开(公告)日：2016-01-21

申请号：US14802985

申请日：2015-07-17

Applicant: Nichia Corporation

Inventor： Shun KITAHAMA ,  Keiji EMURA ,  Shinichi DAIKOKU

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033

Abstract: A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.

Abstract translation: 一种制造半导体发光元件的方法包括：提供半导体层叠体; 在半导体层叠体的一部分上形成绝缘层; 形成覆盖所述半导体层叠体的上表面的绝缘层的上表面的透光性电极以及在平面图中至少部分地与所述延伸部配置的区域重叠的区域; 在透光电极的每个开口中形成光反射层; 在半导体层叠体主体的主面侧形成保护层; 在除了用于形成焊盘电极的区域之外的保护层的上表面上形成掩模; 蚀刻保护层以在保护层中形成开口; 以及在保护层的开口中形成焊盘电极。

公开(公告)号：US20140209938A1

公开(公告)日：2014-07-31

申请号：US14167016

申请日：2014-01-29

Applicant: NICHIA CORPORATION

Inventor： Keiji EMURA ,  Akihiro MIYAGI ,  Shun KITAHAMA

IPC: H01L33/62 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A semiconductor light emitting element includes: an insulating substrate having a plurality of convex portions on a surface thereof; a plurality of light emitting element components having semiconductor laminated bodies that are laminated on the insulating substrate and are separated from one another by a groove that exposes the convex portions; and a connector connecting between the light emitting element components. The light emitting element components include a first light emitting element component and a second light emitting element component. The first light emitting element component is separated from the second light emitting element component with the groove in between, and has a first protrusion that protrudes toward the second light emitting element component. The connector includes a first connector having a shape that straddles the groove and that follows the convex portions, and has a straight section.

Abstract translation: 半导体发光元件包括：绝缘基板，其表面上具有多个凸部; 多个发光元件，其具有层叠在所述绝缘基板上并且通过露出所述凸部的槽而彼此分离的半导体层叠体; 以及连接在发光元件部件之间的连接器。 发光元件部件包括第一发光元件部件和第二发光元件部件。 第一发光元件部件与第二发光元件部件分离，其间具有凹槽，并且具有朝向第二发光元件部件突出的第一突起。 连接器包括第一连接器，该第一连接器具有横跨所述凹槽的形状，并且沿着所述凸部，并且具有直的部分。