Interlaced solid-state imaging device
    11.
    发明授权
    Interlaced solid-state imaging device 失效
    隔行固态成像装置

    公开(公告)号:US4392158A

    公开(公告)日:1983-07-05

    申请号:US257461

    申请日:1981-04-24

    CPC分类号: H04N3/1512 H01L27/14643

    摘要: In a solid-state imaging device having a plurality of photodiodes which are arrayed in two dimensions on an identical semiconductor body, a group of horizontal switching elements and a group of vertical switching elements which pick up the photodiodes, and a horizontal scanning circuit and a vertical scanning circuit which impress scanning pulses on the horizontal and vertical switching elements respectively, and having an interlaced scanning mechanism which picks up a plurality of vertical scanning lines by means of interlace switching elements so as to permit horizontal scanning of scanning lines of a plurality of rows; a solid-state imaging device characterized in that said interlaced scanning mechanism includes insulated-gate field effect transistors for recovering voltage levels of the scanning pulses having undergone voltage drops due to the interlace switching elements.

    摘要翻译: 在具有在相同的半导体主体上二维排列的多个光电二极管的固态成像装置中,一组水平切换元件和一组拾取光电二极管的垂直开关元件,以及水平扫描电路和 垂直扫描电路,其分别在水平和垂直开关元件上施加扫描脉冲,并且具有隔行扫描机构,其通过隔行扫描开关元件拾取多条垂直扫描线,以允许水平扫描多条扫描线的扫描线 行 一种固态成像装置,其特征在于,所述隔行扫描机构包括绝缘栅场效应晶体管,用于恢复由于交错开关元件而经历电压降的扫描脉冲的电压电平。

    Solid-state imaging device
    13.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4413283A

    公开(公告)日:1983-11-01

    申请号:US332933

    申请日:1981-12-21

    IPC分类号: H04N9/07 H04N9/04 H04N3/14

    CPC分类号: H04N9/045 H04N3/1512

    摘要: A solid-state imaging device comprises a plurality of photodiodes arranged in a matrix form in the same semiconductor substrate, horizontal and vertical switching elements for selecting the photodiodes, horizontal and vertical shift registers for supplying scan pulses to the horizontal and vertical switching elements, and an interlace circuit for simultaneously selecting two vertical gate lines to simultaneously read two picture element rows. A buffer circuit is inserted between the interlace circuit and the vertical gate lines for changing a potential level of one of the two selected vertical gate lines from a high level to a low level prior to changing the potential level of the other vertical gate line.

    摘要翻译: 固态成像装置包括在同一半导体衬底中以矩阵形式布置的多个光电二极管,用于选择光电二极管的水平和垂直开关元件,用于向水平和垂直开关元件提供扫描脉冲的水平和垂直移位寄存器,以及 用于同时选择两条垂直栅极线以同时读取两个像素行的隔行电路。 在隔行电路和垂直栅极线之间插入缓冲电路,用于在改变另一垂直栅极线的电位电平之前将两个所选择的垂直栅极线之一的电位电平从高电平改变为低电平。

    Solid state image pick-up apparatus
    14.
    发明授权
    Solid state image pick-up apparatus 失效
    固态摄像装置

    公开(公告)号:US4456929A

    公开(公告)日:1984-06-26

    申请号:US385005

    申请日:1982-06-04

    CPC分类号: H04N3/1568

    摘要: In a solid state image pick-up device of the type comprising a first semiconductor layer including a photoelectric conversion element array, and vertical and horizontal switching elements adapted to select the photoelectric conversion elements, a second semiconductor layer including a horizontal shift register for selecting the horizontal switching elements, a third semiconductor layer including a vertical shift register for selecting the vertical switching elements, the first, second and third semiconductor layers are insulated from each other, and gate voltage V.sub.SMOS.L impressed upon a gate electrode of a not selected horizontal switching element is made to satisfy a relation V.sub.SMOS.L .gtoreq.V.sub.WPD +F.sub.FB where V.sub.WPD represents a potential of the first semiconductor layer, and V.sub.FB a flat band voltage beneath gate electrodes of the horizontal switching elements.

    摘要翻译: 在包括包括光电转换元件阵列的第一半导体层和适于选择光电转换元件的垂直和水平开关元件的类型的固态图像拾取装置中,包括水平移位寄存器的第二半导体层, 水平开关元件,包括用于选择垂直开关元件的垂直移位寄存器的第三半导体层,第一,第二和第三半导体层彼此绝缘,并且栅极电压VSMOS.L施加在未选择的水平的栅电极 使开关元件满足VSMOS.L> / = VWPD + FFB的关系,其中VWPD表示第一半导体层的电位,VFB是水平开关元件的栅电极下方的平带电压。

    Circuit for generating scanning pulses
    15.
    发明授权
    Circuit for generating scanning pulses 失效
    用于产生扫描脉冲的电路

    公开(公告)号:US4295055A

    公开(公告)日:1981-10-13

    申请号:US46028

    申请日:1979-06-06

    摘要: A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.

    摘要翻译: 一种用于产生扫描脉冲的电路,包括串联连接的多级基本电路,所述每个基本电路包括第一,第二和第三绝缘栅极场效应晶体管(MIST),每个绝缘栅场效应晶体管的第一和第二端子均为源极 所述第一MIST的所述第一端子用作时钟脉冲施加端子,所述第一MIST的所述栅极端子用作输入端子,所述第一MIST的所述第二端子和所述第一端子的所述第一端子 并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子,所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子,所述第三MIST的所述第二端子 被用作接地端子,所述第三MIST的所述栅极端子用作反馈输入端子。

    Solid-state imaging device having a clamping circuit for drawing out
excess charge
    16.
    发明授权
    Solid-state imaging device having a clamping circuit for drawing out excess charge 失效
    具有用于抽出多余电荷的钳位电路的固态成像装置

    公开(公告)号:US4267469A

    公开(公告)日:1981-05-12

    申请号:US066880

    申请日:1979-08-16

    摘要: In a solid-state imaging device having on an identical semiconductor substrate a plurality of photodiodes which are arrayed in two dimensions, vertical and horizontal switching MOSFETs which select the positions of the photodiodes, and vertical and horizontal scanning circuits which provide scanning pulses for controlling the operations of the vertical and horizontal switching MOSFETs; the improvement therein comprising a clamping circuit which is made up of a diode, a MOSFET or the like and which is disposed between the photodiode and a vertical scanning line of the succeeding stage, so that excess charges overflowing the photodiode are drawn out from the vertical scanning line through the clamping circuit, whereby the blooming can be prevented.

    摘要翻译: 在具有相同半导体衬底的固态成像器件中,排列有二维排列的多个光电二极管,选择光电二极管的位置的垂直和水平开关MOSFET以及提供扫描脉冲的垂直和水平扫描电路,用于控制 垂直和水平开关MOSFET的工作; 其改进在于包括由二极管,MOSFET等组成并且设置在光电二极管和后级的垂直扫描线之间的钳位电路,使得溢出光电二极管的过量电荷从垂直线 扫描线通过钳位电路,从而可以防止起霜。

    Solid-state imaging device having photo-electric conversion elements and
other circuit elements arranged to provide improved photo-sensitivity
    17.
    发明授权
    Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity 失效
    具有光电转换元件和其它电路元件的固态成像装置被布置成提供改善的光敏性

    公开(公告)号:US4942474A

    公开(公告)日:1990-07-17

    申请号:US281220

    申请日:1988-12-08

    IPC分类号: H04N5/3745

    CPC分类号: H04N3/1512

    摘要: A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in a predetermined order, is disclosed in which device the read-out means is made up of a plurality of active elements such as a MOS transistor connected to a photodiode, part of the active elements are used as a pixel amplifier for amplifying the signal charge of the photodiode in such a manner that the signal charge is converted into a current or voltage, the output of the pixel amplifier at a time the signal charge of the photodiode is not applied to the input part of the pixel amplifier and the output of the pixel amplifier at a time the signal charge of the photodiode is applied to the input part of the pixel amplifier are separately stored in a pair of storage means, and the outputs of a plurality of pairs of storage means are successively taken out in accordance with a scanning signal.

    摘要翻译: 一种固态成像装置,其包括布置在半导体衬底上的多个光电转换元件(例如,光电二极管),以形成矩阵和读出装置,用于根据事件读出存储在光电二极管中的信号电荷 公开了以预定顺序的光,读出装置由多个有源元件(例如连接到光电二极管的MOS晶体管)构成,其中有源元件的一部分用作像素放大器,用于放大 光电二极管的信号电荷使得信号电荷被转换为电流或电压,在光电二极管的信号电荷未被施加到像素放大器的输入部分的时间处的像素放大器的输出和输出 在光电二极管的信号电荷施加到像素放大器的输入部分的时间分别存储在一对存储装置中,并且输出的像素放大器的输出 根据扫描信号依次取出多对存储装置。

    Solid-state imaging device
    18.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4814848A

    公开(公告)日:1989-03-21

    申请号:US58825

    申请日:1987-06-05

    CPC分类号: H01L27/14887

    摘要: A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.

    摘要翻译: 一种具有多个第一导电类型的用于光电转换的半导体层的固态成像装置,其设置在第二导电类型的第一半导体层的表面上,该第二半导体层形成在半导体衬底的一个表面的一部分上 第一导电型,形成在基板表面的一部分上的第二导电类型的第二半导体层的表面上的用于电荷转移的第一导电类型的半导体层和信号输出装置。 第二导电类型的第一半导体层和第二导电类型的第二半导体层以不同的步骤形成,使得第一半导体层被设置为比第二半导体层更深。

    Solid-state imaging device having an amplifying means in the matrix
arrangement of picture elements
    19.
    发明授权
    Solid-state imaging device having an amplifying means in the matrix arrangement of picture elements 失效
    具有在像素的矩阵排列中的放大装置的固态成像装置

    公开(公告)号:US4809075A

    公开(公告)日:1989-02-28

    申请号:US109319

    申请日:1987-10-19

    摘要: A solid-state imaging device is constructed by integrating a plurality of face plate elements of an imager in the shape of a matrix on a semiconductor substrate. The face plate elements are formed of photodiodes, in which charges corresponding to incident light are accumulated. The charges are converted into currents or voltages by a plurality of amplifying means disposed in the matrix and which are provided adjacent to the photodiodes. The currents or the voltages obtained through conversion are delivered out of the matrix through signal lines. To the signal lines a correlated double sampling circuit is connected, and this curcuit detects a difference in outputs of the amplifying means between a case when the charges of the photodiodes are not present in the input portions of the amplifying means and a case when they are present therein.

    摘要翻译: 固态成像装置通过在半导体衬底上集成成像器形状的成像器的多个面板元件而构成。 面板元件由光电二极管形成,其中对应于入射光的电荷被累积。 通过设置在矩阵中并与光电二极管相邻设置的多个放大装置将电荷转换成电流或电压。 通过转换获得的电流或电压通过信号线传送出矩阵。 对于信号线,连接相关的双采样电路,并且该电路在放大装置的输入部分中不存在光电二极管的电荷的情况与它们之间的情况下检测放大装置的输出的差异 在其中存在。

    Solid-state imaging device
    20.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号:US4443818A

    公开(公告)日:1984-04-17

    申请号:US329609

    申请日:1981-12-10

    摘要: A solid-state imaging device comprises an array of picture elements and a horizontal CTD shift register. In a horizontal blanking period, two or more sets of signals from vertical signal output lines coupled to the picture element array are stored in the horizontal CTD shift register. In a horizontal scanning period, the horizontal CTD shift register operates in a 3-phase (or 4-phase) driving fashion to deliver picture image information signal to its output part.

    摘要翻译: 固态成像装置包括像素阵列和水平CTD移位寄存器。 在水平消隐期间,耦合到像素阵列的垂直信号输出线的两组或更多组信号存储在水平CTD移位寄存器中。 在水平扫描周期中,水平CTD移位寄存器以三相(或四相)驱动方式工作,以将图像信息信号传送到其输出部分。