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公开(公告)号：US06210810B1
公开(公告)日：2001-04-03
申请号：US08928765
申请日：1997-09-12
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
IPC分类号： B32B1518
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01L43/12 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/12986
摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.
摘要翻译： 磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度 在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向 的矫顽力增强层。 还公开了一种制造这种装置的方法。
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公开(公告)号：US6140902A
公开(公告)日：2000-10-31
申请号：US904058
申请日：1997-07-31
申请人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
发明人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
IPC分类号： H01F10/14 , H01F10/187 , H01F17/00 , H01F27/30
CPC分类号： H01F10/187 , H01F17/0006 , H01F2017/0066
摘要： A thin magnetic element which comprises a coil pattern formed on at least one side of a substrate and a thin magnetic film formed on the coil pattern, wherein:said thin magnetic film is for++med to a thickness of 0.5 .mu.m or greater but 8 .mu.m or smaller;and at least one of the following conditions, that is, assuming that the thickness and width of a coil conductor constituting the coil pattern are t and a, respectively, an aspect ratio t/a of the coil conductor satisfies the following relationship: 0.035.ltoreq.t/a.ltoreq.0.35;and assuming that the width of the conductor constituting the coil pattern is a and the distance between the mutually adjacent coil conductors in the coil pattern is b, the following relationship: 0.2.ltoreq.a/(a+b) is satisfied.
摘要翻译： 一种薄磁性元件，其包括形成在基板的至少一侧的线圈图案和形成在线圈图案上的薄磁膜，其中：所述薄磁膜用于++ med至0.5μm或更大的厚度，但是 8亩以下; 以及以下条件中的至少一个，即构成线圈图案的线圈导体的厚度和宽度分别为t和a，线圈导体的纵横比t / a满足以下关系：0.035 < /=t/a
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公开(公告)号：US6139908A
公开(公告)日：2000-10-31
申请号：US322817
申请日：1999-05-28
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , H01F10/3268 , H01L43/12 , G11B2005/3996 , G11B5/3903 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/12986
摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.
摘要翻译： 磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度 在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向 的矫顽力增强层。 还公开了一种制造这种装置的方法。
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14.发明授权
公开(公告)号：US6055135A
公开(公告)日：2000-04-25
申请号：US823094
申请日：1997-03-24
申请人： Kazuaki Fukamichi , Yutaka Shimada , Osamu Kitakami , Kim Jek Jun , Hiroko Uyama , Akihiro Makino , Naoya Hasegawa
发明人： Kazuaki Fukamichi , Yutaka Shimada , Osamu Kitakami , Kim Jek Jun , Hiroko Uyama , Akihiro Makino , Naoya Hasegawa
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/3967 , H01F10/3218 , Y10T428/1121
摘要： The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.
摘要翻译： 本发明的目的在于提供一种由FeMn或NiMn以外的完全新颖的材料构成且具有优异的耐腐蚀性和高电阻率的优异的交换耦合薄膜，以及包括交换耦合薄膜的磁阻元件和磁头。 交换耦合薄膜包括主体由体心立方结构的晶相和含有元素M的元素M构成的反铁磁性膜，元素M含有元素周期表中的3B族元素的至少一种元素，或Al，Ga 或In，以及包含Fe，Ne和Co中的至少一种的铁磁膜，两个膜彼此层压，其中在反铁磁膜和铁磁膜之间的界面中产生磁交换耦合。
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公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。
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16.发明授权Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers 有权隧道磁阻元件，其包括Mg-O阻挡层，其中非磁性金属子层设置在磁性层之一中公开(公告)号：US07969690B2
公开(公告)日：2011-06-28
申请号：US12042585
申请日：2008-03-05
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , H01L43/08
摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.
摘要翻译： 在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。 非磁性金属子层的平均厚度为约1埃以上且约5以下。
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17.发明授权公开(公告)号：US07907370B2
公开(公告)日：2011-03-15
申请号：US11851570
申请日：2007-09-07
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Masahiko Ishizone , Ryo Nakabayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Masahiko Ishizone , Ryo Nakabayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/16 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/08 , H01L43/12
摘要： A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.
摘要翻译： 公开了一种隧道式磁感应元件，其包括能够保持自由磁性层的有利的软磁性能并且与已知的隧道磁传感元件相比可以具有高电阻变化率（＆Dgr; R / R）的Mg-O绝缘屏障， 并且还公开了制造这种隧道磁传感元件的方法。 在Mg-O绝缘屏障上设置由Fe组成比X为约30〜100原子％的Co100-XFeX构成的增强层（第二磁性层）。 由此，可以减小自由磁层的磁致伸缩λ，并且可以增加电阻变化率（＆Dgr; R / R）。
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18.发明授权Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys 有权磁传感元件包括自由磁层或具有两个由不同CoMn基合金合金构成的子层的固定磁层公开(公告)号：US07724481B2
公开(公告)日：2010-05-25
申请号：US11504147
申请日：2006-08-15
CPC分类号： G01R33/093 , B82Y25/00 , Y10T428/1121 , Y10T428/115
摘要： A magnetic sensing element is provided. A free magnetic layer has a three-layer structure including CoMnα sublayers each composed of a metal compound represented by the formula: Co2xMnxαy. The α contains an element β and Sb, the element β being at least one element selected from Ge, Ga, In, Si, Pb, Zn, Sn, and Al. The concentration x and the concentration y are each represented in terms of atomic percent and satisfy the equation: 3x+y=100 atomic percent. One of the CoMnα sublayers is in contact with a lower nonmagnetic material layer. The other CoMnα sublayer is in contact with upper nonmagnetic material layer. As a result, it is possible to achieve a high ΔRA and a lower interlayer coupling magnetic field Hin compared with the known art.
摘要翻译： 提供了一种磁传感元件。 自由磁性层具有包含CoMnα亚层的三层结构，各层由以下通式表示的金属化合物构成：Co2xMnxαy。 α包含元素＆bgr; 和Sb，元素＆bgr; 是选自Ge，Ga，In，Si，Pb，Zn，Sn和Al中的至少一种元素。 浓度x和浓度y均以原子百分比表示，满足下式：3x + y = 100原子％。 CoMnα子层中的一个与较低的非磁性材料层接触。 另一个CoMnα子层与上部非磁性材料层接触。 结果，与已知技术相比，可以实现高的＆Dgr。RA和较低的层间耦合磁场Hin。
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19.发明授权Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer 失效具有包含非磁性金属层的自由层的隧道效应型磁传感器公开(公告)号：US07643254B2
公开(公告)日：2010-01-05
申请号：US11671819
申请日：2007-02-06
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3295
摘要： A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
摘要翻译： 隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和 第二软磁层，从底部依次层叠。 例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。 第一软磁性层的平均厚度形成在5〜60的范围内。 因此，可以获得高电阻变化率（DeltaR / R）。
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公开(公告)号：US07609489B2
公开(公告)日：2009-10-27
申请号：US11366002
申请日：2006-02-28
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929
摘要： A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allowed to flow in a direction perpendicular to the surfaces of the layers forming the multilayer film, wherein the pinned magnetic layer has a NiaFeb alloy layer (where a and b each indicate atomic percent, and 0
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