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    SELF-ALIGNED OPTICAL GRID ON IMAGE SENSOR
    12.
    发明申请
    SELF-ALIGNED OPTICAL GRID ON IMAGE SENSOR 审中-公开

    公开(公告)号：US20180090538A1

    公开(公告)日：2018-03-29

    申请号：US15276000

    申请日：2016-09-26

    Applicant: OmniVision Technologies, Inc.

    Inventor： Xin Wang ,  Dajiang Yang ,  Qin Wang ,  Duli Mao ,  Dyson Hsin-Chih Tai

    IPC: H01L27/146

    CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14629

    Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

    RGB-IR PHOTOSENSOR WITH NONUNIFORM BURIED P-WELL DEPTH PROFILE FOR REDUCED CROSS TALK AND ENHANCED INFRARED SENSITIVITY
    15.
    发明申请
    RGB-IR PHOTOSENSOR WITH NONUNIFORM BURIED P-WELL DEPTH PROFILE FOR REDUCED CROSS TALK AND ENHANCED INFRARED SENSITIVITY 有权
    RGB-IR光电传感器，具有非侵入性的P-PELL薄型深度型材，用于减少交叉点和增强的红外灵敏度

    公开(公告)号：US20160358969A1

    公开(公告)日：2016-12-08

    申请号：US14731707

    申请日：2015-06-05

    Applicant: OmniVision Technologies, Inc.

    Inventor： Zhenhong Fu ,  Dajiang Yang ,  Xianmin Yi ,  Gang Chen ,  Sing-Chung Hu ,  Duli Mao

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14649

    Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

    Abstract translation: 前置互连（FSI）红 - 绿 - 蓝 - 红 - 红（RGB-IR）光电传感器阵列具有在P型阱中具有扩散的N型区域的第一类型的光电传感器，P型阱扩散到 高电阻率半导体层; P型井中具有较深扩散的N型区域的第二类光电传感器，P型井; 以及具有扩散的N型区域的第三类型的光电传感器扩散到所有其它类型的光电传感器的所有高电阻率半导体层。 在实施例中，第四类型的光电传感器在P型阱中具有扩散的N型区域，N型区域比第一和第二类型的光电传感器的N型区域更深。

    Image sensor with dielectric charge trapping device
    16.
    发明授权
    Image sensor with dielectric charge trapping device 有权
    具有介电电荷俘获装置的图像传感器

    公开(公告)号：US09312299B2

    公开(公告)日：2016-04-12

    申请号：US14250192

    申请日：2014-04-10

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

    IPC: H01L27/146 ,  H01L31/167

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

    Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

    Negatively charged layer to reduce image memory effect
    17.
    发明授权
    Negatively charged layer to reduce image memory effect 有权
    负电荷层降低图像记忆效应

    公开(公告)号：US08816462B2

    公开(公告)日：2014-08-26

    申请号：US13660774

    申请日：2012-10-25

    Applicant: OmniVision Technologies, Inc.

    Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

    IPC: H01L27/146

    CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

    Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.

    Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和接触蚀刻停止层之间的光电二极管区域之上。

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