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    IMAGE SENSOR WITH VARYING THICKNESS DIELECTRIC LAYER
    11.
    发明公开
    IMAGE SENSOR WITH VARYING THICKNESS DIELECTRIC LAYER 审中-公开

    公开(公告)号：US20240332329A1

    公开(公告)日：2024-10-03

    申请号：US18743796

    申请日：2024-06-14

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Chao Niu

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14605 ,  H01L27/14685

    Abstract: An image sensor includes an active pixel photodiode, a black pixel photodiode, a metal grid structure, a light shield, and a varying thickness dielectric layer. The varying thickness dielectric layer includes a first portion having a first dielectric layer thickness and a second portion having a second dielectric layer thickness different from the first dielectric layer thickness. The metal grid structure is disposed between the first portion of the varying thickness dielectric layer and a semiconductor material. The light shield is disposed between the second portion of the varying thickness dielectric layer and the black pixel photodiode.

    IMAGE SENSORS WITH PHASE DETECTION AUTO FOCUS PIXELS
    13.
    发明申请
    IMAGE SENSORS WITH PHASE DETECTION AUTO FOCUS PIXELS 审中-公开

    公开(公告)号：US20200059618A1

    公开(公告)日：2020-02-20

    申请号：US16103257

    申请日：2018-08-14

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Dyson Tai ,  Lindsay Grant

    IPC: H04N5/369 ,  H01L27/146

    Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.

    SOURCE FOLLOWER DEVICE FOR ENHANCED IMAGE SENSOR PERFORMANCE
    14.
    发明申请
    SOURCE FOLLOWER DEVICE FOR ENHANCED IMAGE SENSOR PERFORMANCE 审中-公开

    公开(公告)号：US20190165016A1

    公开(公告)日：2019-05-30

    申请号：US15828217

    申请日：2017-11-30

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Young Woo Jung ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146 ,  H04N5/3745 ,  H01L29/10

    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.

    CROSS TALK REDUCTION FOR HIGH DYNAMIC RANGE IMAGE SENSORS
    15.
    发明申请
    CROSS TALK REDUCTION FOR HIGH DYNAMIC RANGE IMAGE SENSORS 审中-公开

    公开(公告)号：US20180286895A1

    公开(公告)日：2018-10-04

    申请号：US15478085

    申请日：2017-04-03

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14683 ,  H04N5/378 ,  H04N9/045

    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

    MULTI-LAYER METAL STACK FOR ACTIVE PIXEL REGION AND BLACK PIXEL REGION OF IMAGE SENSOR AND METHODS THEREOF
    18.
    发明公开
    MULTI-LAYER METAL STACK FOR ACTIVE PIXEL REGION AND BLACK PIXEL REGION OF IMAGE SENSOR AND METHODS THEREOF 审中-公开

    公开(公告)号：US20230207592A1

    公开(公告)日：2023-06-29

    申请号：US17561351

    申请日：2021-12-23

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Chao Niu

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14685 ,  H01L27/14605

    Abstract: An image sensor includes an active pixel photodiode, a black pixel photodiode, a metal grid structure, and a light shield. Each of the active pixel photodiode and the black pixel photodiode are disposed in a semiconductor material having a first side and a second side opposite the first side. The first side of the semiconductor material is disposed between the light shield and the black pixel photodiode. The metal grid structure includes a first multi-layer metal stack including a first metal and a second metal different from the first metal. The light shield includes a second multi-layer stack including the first metal and the second metal. A first thickness of the first multi-layer metal stack is less than a second thickness of the second multi-layer metal stack.

    NEGATIVELY BIASED ISOLATION STRUCTURES FOR PIXEL DEVICES
    19.
    发明申请
    NEGATIVELY BIASED ISOLATION STRUCTURES FOR PIXEL DEVICES 有权

    公开(公告)号：US20210193703A1

    公开(公告)日：2021-06-24

    申请号：US16721320

    申请日：2019-12-19

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

    IPC: H01L27/146

    Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

    Low noise CMOS image sensor by stack architecture
    20.
    发明授权
    Low noise CMOS image sensor by stack architecture 有权

    公开(公告)号：US10218924B2

    公开(公告)日：2019-02-26

    申请号：US15485534

    申请日：2017-04-12

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Duli Mao ,  Hiroaki Ebihara ,  Kazufumi Watanabe

    IPC: H04N5/335 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745

    Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.

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