公开(公告)号：US09312299B2

公开(公告)日：2016-04-12

申请号：US14250192

申请日：2014-04-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

IPC: H01L27/146 ,  H01L31/167

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

公开(公告)号：US11942504B2

公开(公告)日：2024-03-26

申请号：US17819821

申请日：2022-08-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu

IPC: H01L27/146 ,  H01L23/467 ,  H01L31/024

CPC classification number: H01L27/14636 ,  H01L23/467 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/024

Abstract: Image sensors include a pixel die that is stacked on a logic die. The logic die includes at least one function logic element disposed on a bond side thereof, and a logic oxide array of raised logic oxide features also disposed on the bond side. The pixel die includes a pixel array disposed on a light receiving side thereof, and a pixel oxide array of raised pixel oxide features disposed on a bond side of the pixel die. A plurality of outer bonds is disposed between an outer region of the logic die and an outer region of the pixel die. A plurality of inner bonds is formed at an inner region of the image sensor between the pixel oxide array and the logic oxide array, the inner bonds being spaced apart by a plurality of fluidly connected air gaps that extend between the logic die and the pixel die.

公开(公告)号：US11862678B2

公开(公告)日：2024-01-02

申请号：US16905625

申请日：2020-06-18

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Sing-Chung Hu ,  Gang Chen ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H01L29/06

CPC classification number: H01L29/0653 ,  H01L27/1463 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689

Abstract: A pixel-array substrate includes a semiconductor substrate with a pixel array, a back surface, and a front surface, and a guard ring formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the front surface, the back surface forming a trench extending into the semiconductor substrate, the trench overlapping the guard ring. A method for reducing leakage current into a pixel-array includes doping a semiconductor substrate to form a guard ring that extends into the semiconductor substrate from a front surface, encloses a pixel array, excludes a periphery region, and resists a flow of electric current, and forming, into a back surface of the semiconductor substrate, a trench that penetrates into the back surface and overlaps the guard ring, the guard ring and the trench configured to resist the flow of electric current between the pixel array and the periphery region.

公开(公告)号：US20230207587A1

公开(公告)日：2023-06-29

申请号：US18177494

申请日：2023-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chiao-Ti Huang ,  Sing-Chung Hu ,  Yuanwei Zheng ,  Bill Phan

IPC: H01L27/146 ,  H01L29/66 ,  H01L21/762 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L27/14616 ,  H01L27/1463 ,  H01L27/14614 ,  H01L27/14643 ,  H01L29/66795 ,  H01L21/76224 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4236 ,  H01L29/7856 ,  H01L27/14603 ,  H01L27/14641 ,  H01L29/7851

Abstract: An image sensor includes a photodiode disposed in a semiconductor substrate having a first surface and a second surface opposite to the first surface. A floating diffusion is disposed in the semiconductor substrate. A transfer transistor is configured for coupling the photodiode to the floating diffusion. The transfer transistor includes a vertical transfer gate extending a first depth in a depthwise direction from the first surface into the semiconductor substrate. A transistor is coupled to the floating diffusion. The transistor includes: a planar gate disposed proximate to the first surface of the semiconductor substrate; and a plurality of vertical gate electrodes, each extending a respective depth into the semiconductor substrate from the planar gate in the depthwise direction. The respective depth of at least one of the plurality of vertical gate electrodes is the same as the first depth of the vertical transfer gate.

公开(公告)号：US11626433B2

公开(公告)日：2023-04-11

申请号：US16830078

申请日：2020-03-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Seong Yeol Mun ,  Bill Phan

IPC: H01L27/146

Abstract: Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. At least three substrate trench structures are formed in the semiconductor substrate, defining two nonplanar structures, each having a plurality of sidewall portions. An isolation layer includes at least three isolation layer trench structures, each being disposed in a respective one of the three substrate trench structures. A gate includes three fingers, each being disposed in a respective one of the three isolation layer trench structures. An electron channel of the transistor extends along the plurality of sidewall portions of the two nonplanar structures in a channel width plane.

公开(公告)号：US09419044B2

公开(公告)日：2016-08-16

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/00 ,  H01J40/14 ,  H01L27/146 ,  H01L21/00 ,  H01L31/18 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US20150303235A1

公开(公告)日：2015-10-22

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US08969775B2

公开(公告)日：2015-03-03

申请号：US13781388

申请日：2013-02-28

Applicant: Omnivision Technologies, Inc.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/00 ,  H04N5/335

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20140239154A1

公开(公告)日：2014-08-28

申请号：US13781388

申请日：2013-02-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US12262563B2

公开(公告)日：2025-03-25

申请号：US17701632

申请日：2022-03-22

Applicant: Omnivision Technologies, Inc.

Inventor： Shiyu Sun ,  Yuanwei Zheng ,  Gang Chen ,  Sing-Chung Hu ,  Armin Yazdani

IPC: H10F39/18

Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.