公开(公告)号：US10103193B1

公开(公告)日：2018-10-16

申请号：US15668207

申请日：2017-08-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto

IPC: H01L25/00 ,  H01L27/146

Abstract: An apparatus and method for a low dark current floating diffusion is discussed. An example method includes coupling a photodiode to a floating diffusion through a transfer gate where a gate terminal of the transfer gate is provided a first voltage, resetting the floating diffusion, repetitively sampling image charge on the photodiode a plurality of times, where the sampled image charge is coupled to the floating diffusion, and where the gate terminal of the transfer gate is provided a second voltage less than the first voltage during each sampling of the image charge, while repetitively sampling the image charge, coupling an additional capacitance to the floating diffusion, where a first capacitance voltage is applied to the additional capacitance during the sampling, and performing correlated double sampling of the sampled image charge.

公开(公告)号：US09859311B1

公开(公告)日：2018-01-02

申请号：US15362391

申请日：2016-11-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/1464 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: A backside illuminated image sensor includes a semiconductor material with a plurality of photodiodes disposed in the semiconductor material, and a transfer gate electrically coupled to a photodiode in the plurality of photodiodes to extract image charge from the photodiode. The image sensor also includes a storage gate electrically coupled to the transfer gate to receive the image charge from the transfer gate. The storage gate has a gate electrode disposed proximate to a frontside of the semiconductor material, an optical shield disposed in the semiconductor material, and a storage node disposed between the gate electrode and the optical shield. The optical shield is optically aligned with the storage node to prevent the image light incident on the backside illuminated image sensor from reaching the storage node.

公开(公告)号：US20250030962A1

公开(公告)日：2025-01-23

申请号：US18353680

申请日：2023-07-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Rui Wang ,  Takayuki Goto

IPC: H04N25/77 ,  H04N25/59 ,  H04N25/78

Abstract: A pixel array includes a plurality of pixel cells, each including a photodiode configured to photogenerate image charge in response to the incident light, a first floating diffusion (FD) coupled to receive the image charge from the photodiode, a reset transistor coupled between a voltage source and the first FD, a second FD coupled between the first FD and ground, a first dual FD transistor coupled between the first and second FDs. Second FDs of first and second pixel cells are coupled. Second FDs of third and fourth pixel cells are coupled.

公开(公告)号：US10269846B2

公开(公告)日：2019-04-23

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146 ,  H01L31/0232

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

公开(公告)号：US10062722B2

公开(公告)日：2018-08-28

申请号：US15284961

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Vincent Venezia ,  Boyd Albert Fowler ,  Eric A. G. Webster

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

公开(公告)号：US20180151610A1

公开(公告)日：2018-05-31

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02327

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

公开(公告)号：US20180006076A1

公开(公告)日：2018-01-04

申请号：US15198055

申请日：2016-06-30

Applicant: OmniVision Technologies, Inc.

Inventor： Takayuki Goto ,  Dajiang Yang ,  Keiji Mabuchi ,  Sohei Manabe

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/113

CPC classification number: H01L27/14645 ,  H01L27/14649 ,  H01L31/105 ,  H01L31/1136

Abstract: An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.

公开(公告)号：US20170142360A1

公开(公告)日：2017-05-18

申请号：US14941254

申请日：2015-11-13

Applicant: OmniVision Technologies, Inc.

Inventor： Takayuki Goto ,  Yin Qian ,  Chen-wei Lu

IPC: H04N5/369 ,  G06F3/01 ,  H01L27/146 ,  G02B27/00 ,  G02F1/1337 ,  H04N5/33 ,  G02B27/01

CPC classification number: H04N5/3696 ,  G02B27/0093 ,  G02B27/0172 ,  G02B2027/0138 ,  G02F1/13318 ,  G02F1/133723 ,  G02F1/133784 ,  G02F1/136277 ,  G02F2001/13312 ,  G02F2203/11 ,  G06F3/013 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/33

Abstract: A novel head mounted display includes a display/image sensor. In a particular embodiment the display/image sensor is formed on a single silicon die, which includes display pixels and light sensor pixels. The display pixels and light sensor pixels are each arranged in rows and columns, and the arrays of light sensor pixels and display pixels are interlaced. The center of each light sensor pixel is located between adjacent rows and adjacent columns of display pixels.