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公开(公告)号：US20200263320A1
公开(公告)日：2020-08-20
申请号：US16792386
申请日：2020-02-17
发明人： Yoshio OKAYAMA , Shinsuke KOMATSU , Masahiro TADA , Yusuke MORI , Masayuki IMANISHI , Masashi YOSHIMURA
摘要： An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.
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公开(公告)号：US20170191186A1
公开(公告)日：2017-07-06
申请号：US15398319
申请日：2017-01-04
发明人： Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masayuki IMANISHI , Masatomo SHIBATA , Takehiro YOSHIDA
CPC分类号： C30B25/186 , C30B19/02 , C30B19/12 , C30B25/18 , C30B29/406 , H01L21/02002 , H01L21/02389 , H01L21/02428 , H01L21/0254 , H01L21/0262 , H01L21/02625
摘要： There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.
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公开(公告)号：US20180038010A1
公开(公告)日：2018-02-08
申请号：US15555004
申请日：2016-02-18
CPC分类号： C30B19/02 , C30B25/20 , C30B29/406 , H01L21/02024 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02625 , H01L21/02628 , H01L21/02634
摘要： A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.
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公开(公告)号：US20170314157A1
公开(公告)日：2017-11-02
申请号：US15584756
申请日：2017-05-02
发明人： Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masayuki IMANISHI , Masatomo SHIBATA , Takehiro YOSHIDA
CPC分类号： C30B25/02 , C30B25/20 , C30B29/406
摘要： A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.
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公开(公告)号：US20220056614A1
公开(公告)日：2022-02-24
申请号：US17479516
申请日：2021-09-20
发明人： Yusuke MORI , Masashi YOSHIMURA , Masayuki IMANISHI , Akira KITAMOTO , Junichi TAKINO , Tomoaki SUMI
摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
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公开(公告)号：US20200017993A1
公开(公告)日：2020-01-16
申请号：US16508223
申请日：2019-07-10
发明人： Yusuke MORI , Masashi YOSHIMURA , Masayuki IMANISHI , Akira KITAMOTO , Junichi TAKINO , Tomoaki SUMI , Yoshio OKAYAMA
摘要： A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.
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