公开(公告)号：US20170191186A1

公开(公告)日：2017-07-06

申请号：US15398319

申请日：2017-01-04

申请人： OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masayuki IMANISHI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  C30B19/12 ,  C30B19/02

CPC分类号： C30B25/186 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625

摘要： There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

公开(公告)号：US20180038010A1

公开(公告)日：2018-02-08

申请号：US15555004

申请日：2016-02-18

申请人： OSAKA UNIVERSITY ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B19/02 ,  C30B25/20 ,  H01L21/02 ,  C30B29/40

CPC分类号： C30B19/02 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02024 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02634

摘要： A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.

公开(公告)号：US20170314157A1

公开(公告)日：2017-11-02

申请号：US15584756

申请日：2017-05-02

申请人： OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masayuki IMANISHI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B25/02 ,  C30B29/40

CPC分类号： C30B25/02 ,  C30B25/20 ,  C30B29/406

摘要： A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.

公开(公告)号：US20220002904A1

公开(公告)日：2022-01-06

申请号：US17359949

申请日：2021-06-28

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC分类号： C30B25/02 ,  H01L21/02 ,  C30B29/40 ,  C23C16/30

摘要： A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

公开(公告)号：US20200263317A1

公开(公告)日：2020-08-20

申请号：US16783229

申请日：2020-02-06

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA ,  Kousuke MURAKAMI ,  Shinsuke KOMATSU ,  Masahiro TADA ,  Yoshio OKAYAMA

IPC分类号： C30B19/12 ,  C30B19/02 ,  C30B29/40

摘要： A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

公开(公告)号：US20190271096A1

公开(公告)日：2019-09-05

申请号：US16243321

申请日：2019-01-09

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA ,  Kousuke MURAKAMI ,  Yoshio OKAYAMA

IPC分类号： C30B19/02 ,  C30B29/40 ,  C30B19/10

摘要： A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

公开(公告)号：US20170073840A1

公开(公告)日：2017-03-16

申请号：US15123565

申请日：2015-03-03

申请人： OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC. ,  PANASONIC CORPORATION

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masashi ISEMURA ,  Yoshio OKAYAMA

IPC分类号： C30B29/40 ,  C30B19/12 ,  C30B25/20 ,  C30B25/18 ,  C30B29/20 ,  B28D5/00 ,  H01L21/02 ,  H01L21/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  C30B19/02 ,  C30B33/00

CPC分类号： C30B29/406 ,  B28D5/00 ,  C30B19/02 ,  C30B19/12 ,  C30B25/186 ,  C30B25/20 ,  C30B29/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/7813 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3013 ,  H01S2304/06

摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

摘要翻译： 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过使III族元素金属与氧化剂和含氮气体反应，通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。

公开(公告)号：US20200263320A1

公开(公告)日：2020-08-20

申请号：US16792386

申请日：2020-02-17

申请人： PANASONIC CORPORATION ,  OSAKA UNIVERSITY

发明人： Yoshio OKAYAMA ,  Shinsuke KOMATSU ,  Masahiro TADA ,  Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA

IPC分类号： C30B29/40 ,  C30B15/00 ,  C30B15/36

摘要： An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

公开(公告)号：US20170073839A1

公开(公告)日：2017-03-16

申请号：US15123556

申请日：2015-02-26

申请人： OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masashi ISEMURA ,  Akira USUI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B29/40 ,  C30B19/06 ,  C30B25/18 ,  C30B25/20 ,  C30B33/00 ,  B28D5/00 ,  H01L21/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  C30B19/02 ,  H01L21/02

CPC分类号： C30B29/406 ,  B28D5/00 ,  C30B19/02 ,  C30B19/061 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/7813 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3013 ,  H01S2304/06

摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

摘要翻译： 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。

公开(公告)号：US20220056614A1

公开(公告)日：2022-02-24

申请号：US17479516

申请日：2021-09-20

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI

IPC分类号： C30B25/16 ,  C30B29/40

摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.