公开(公告)号：US20220056614A1

公开(公告)日：2022-02-24

申请号：US17479516

申请日：2021-09-20

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI

IPC分类号： C30B25/16 ,  C30B29/40

摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US20210217618A1

公开(公告)日：2021-07-15

申请号：US17219320

申请日：2021-03-31

申请人： TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

发明人： Nobuaki TAKAHASHI ,  Hitoshi MIURA ,  Koji NEISHI ,  Ryuji KATAYAMA ,  Yusuke MORI ,  Masayuki IMANISHI

IPC分类号： H01L21/02 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

摘要： The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

公开(公告)号：US20200017993A1

公开(公告)日：2020-01-16

申请号：US16508223

申请日：2019-07-10

申请人： OSAKA UNIVERSITY ,  PANASONIC CORPORATION

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC分类号： C30B29/40 ,  C30B25/08 ,  C30B25/10 ,  C30B25/14

摘要： A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

公开(公告)号：US20170362735A1

公开(公告)日：2017-12-21

申请号：US15622427

申请日：2017-06-14

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Mamoru IMADE ,  Shinsuke KOMATSU ,  Michirou YOSHINO

IPC分类号： C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/406 ,  C30B35/00

摘要： A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.

公开(公告)号：US20240288748A1

公开(公告)日：2024-08-29

申请号：US18585164

申请日：2024-02-23

申请人： STANLEY ELECTRIC CO., LTD. ,  OSAKA UNIVERSITY

发明人： Masahiro YOSHIIKE ,  Kazuki SATO ,  Hiroyuki TOGAWA ,  Ryuji KATAYAMA ,  Tomoyuki TANIKAWA ,  Masahiro UEMUKAI ,  Yusuke MORI ,  Masashi YOSHIMURA ,  Tomoaki NAMBU

IPC分类号： G02F1/37 ,  G02F1/35 ,  G02F1/355

CPC分类号： G02F1/37 ,  G02F1/3503 ,  G02F1/3551

摘要： A second harmonic generation element includes a substrate, a first multilayer film reflecting mirror, a second harmonic generation layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The second harmonic generation layer is disposed on the first multilayer film reflecting mirror. The second harmonic generation layer is made of a SrB4O7 crystal that receives a fundamental wave with a predetermined wavelength and emits a second harmonic wave with a wavelength in an ultraviolet region. The second multilayer film reflecting mirror is formed on the second harmonic generation layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror.

公开(公告)号：US20200255975A1

公开(公告)日：2020-08-13

申请号：US16776647

申请日：2020-01-30

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI

IPC分类号： C30B25/16 ,  C30B29/40

摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US20180038010A1

公开(公告)日：2018-02-08

申请号：US15555004

申请日：2016-02-18

申请人： OSAKA UNIVERSITY ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B19/02 ,  C30B25/20 ,  H01L21/02 ,  C30B29/40

CPC分类号： C30B19/02 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02024 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02634

摘要： A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm−3 in a crystal near the principal surface over an entire in-plane region thereof.

公开(公告)号：US20170314157A1

公开(公告)日：2017-11-02

申请号：US15584756

申请日：2017-05-02

申请人： OSAKA UNIVERSITY ,  SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masayuki IMANISHI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B25/02 ,  C30B29/40

CPC分类号： C30B25/02 ,  C30B25/20 ,  C30B29/406

摘要： A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.