公开(公告)号：US10121936B2

公开(公告)日：2018-11-06

申请号：US15645813

申请日：2017-07-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring ,  Felix Ernst

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/32

Abstract: An optoelectronic semiconductor chip including a multi-quantum well including at least one high barrier layer is disclosed. In an embodiment, the chip includes a p-type semiconductor region, an n-type semiconductor region and an active layer suitable for emission of radiation arranged between the p-type region and the n-type region, wherein the active layer is in the form of a multiple quantum well structure. The multiple quantum well structure has a plurality of alternating quantum well layers and barrier layers, wherein a barrier layer arranged closer to the p-type region than to the n-type region is a high barrier layer having an electronic band gap Ehb that is larger than electronic band gaps Eb of other barrier layers, and wherein a quantum well layer that adjoins the high barrier layer on a side facing towards the p-type region has a thickness that is greater than thicknesses of other quantum well layers.

公开(公告)号：US20180097154A1

公开(公告)日：2018-04-05

申请号：US15719649

申请日：2017-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jan Marfeld ,  Christian Betthausen ,  Thomas Schlereth ,  Ivar Tangring

IPC: H01L33/50 ,  H01L27/15

CPC classification number: H01L33/505 ,  F21K9/64 ,  F21V3/08 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/504 ,  H01L2933/0041

Abstract: In various embodiments, a light emitting component is provided. The light emitting component includes a plurality of light emitting semiconductor chips. The semiconductor chips are arranged on at least one carrier. The semiconductor chips are electrically contacted. The light emitting component further includes a converter. The converter is configured to convert light in a first wavelength range, said light being emitted by at least one portion of the light emitting semiconductor chips, at least partly into light in a second wavelength range. The converter is formed separately from the at least one carrier.

公开(公告)号：US12027645B2

公开(公告)日：2024-07-02

申请号：US17288569

申请日：2019-10-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring ,  Korbinian Perzlmaier

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/14 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An optoelectronic semiconductor chip may have or include an x-doped region, a y-doped region, an active region arranged between the x-doped region and the y-doped region, and an x-contact region. The x-contact region may be arranged to the side of the x-doped region facing away from the active region. The x-contact region may include at least one first region and at least one second region. The x-contact region may be designed such that, during operation of the optoelectronic semiconductor chip, more charge carriers are injected into the x-doped region via the second region than via the first region.

公开(公告)号：US20220158034A1

公开(公告)日：2022-05-19

申请号：US17440190

申请日：2020-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring ,  Michael Huber

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

Abstract: An optoelectronic semiconductor device may include a first and a second semiconductor layer having a first and a second conductivity type. The optoelectronic semiconductor device may include a first contact layer in direct contact with the first semiconductor layer, a first insulating layer formed over the semiconductor layers, and a second current spreading structure electrically connected to the second semiconductor layer. A maximum lateral extension of the second semiconductor layer is greater than a maximum lateral extension of the first semiconductor layer, such that a step structure is formed, and the first insulating layer is formed as a conformal layer over the step structure. A second insulating layer may be arranged between a horizontal surface of the first contact layer and the second current spreading structure. The thickness of the second insulating layer is smaller than the smallest thickness of the first insulating layer over the step structure.

公开(公告)号：US20220077369A1

公开(公告)日：2022-03-10

申请号：US17432429

申请日：2020-02-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Richard Scheicher ,  Thomas Huettmayer ,  Ivar Tangring ,  Angela Eberhardt ,  Florian Peskoller

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44 ,  H01L33/58

Abstract: In an embodiment an optoelectronic component includes a first joining partner including an LED chip with a structured light-emitting surface and a compensation layer applied to the light-emitting surface, wherein the compensation layer has a surface facing away from the light-emitting surface and spaced apart from the light-emitting surface, and wherein the surface forms a first connecting surface, a second joining partner having a second connecting surface, the first and second connecting surfaces being arranged such that they face each other and a bonding layer made of a film of low-melting glass having a layer thickness of not more than 1 μm, wherein the bonding layer bonds the first and second connecting surfaces together, wherein the structure of the light-emitting surface is embedded in the compensation layer, and wherein the first and second connecting surfaces are smooth such that their surface roughness, expressed as center-line roughness, is less than or equal to 50 nm.

公开(公告)号：US20210408351A1

公开(公告)日：2021-12-30

申请号：US17293049

申请日：2019-11-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring ,  Berthold Hahn

IPC: H01L33/64

Abstract: An optoelectronic semiconductor component having an optoelectronic semiconductor chip for emitting electromagnetic radiation. The optoelectronic semiconductor chip may have a first semiconductor layer, a second semiconductor layer, first and second current spreading layers, electrical connection elements and first connection regions. The first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The first current spreading layer is electrically connected to the first semiconductor layer. The electrical connection elements electrically connect the second semiconductor layer to the second current spreading layer. The first connection regions are connected to the first current spreading layer and extend through the second current spreading layer. An area coverage of the first connection regions in a region between adjacent parts of the second current spreading layer is greater than 20% of the area coverage of the second current spreading layer.

公开(公告)号：US20210399169A1

公开(公告)日：2021-12-23

申请号：US17288569

申请日：2019-10-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring ,  Korbinian Perzlmaier

IPC: H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip may have or include an x-doped region, a y-doped region, an active region arranged between the x-doped region and the y-doped region, and an x-contact region. The x-contact region may be arranged to the side of the x-doped region facing away from the active region. The x-contact region may include at least one first region and at least one second region. The x-contact region may be designed such that, during operation of the optoelectronic semiconductor chip, more charge carriers are injected into the x-doped region via the second region than via the first region.

公开(公告)号：US11171123B2

公开(公告)日：2021-11-09

申请号：US16069204

申请日：2017-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring

IPC: H01L33/54 ,  H01L25/075 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60

Abstract: A method produces an optoelectronic lighting device. The device efficiently increases a decoupling of electromagnetic radiation from a volume emitter LED chip. This is achieved in that, a frame made of an optical material is provided on side surfaces of the volume emitter LED chip, wherein the frame has a curved section. Light decoupled via the side surfaces of the volume emitter LED chip is thereby coupled into the frame, and can be decoupled again via same or reflected, for example, on a reflective material applied to the frame.

公开(公告)号：US20210280756A1

公开(公告)日：2021-09-09

申请号：US16316987

申请日：2017-07-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring ,  Korbinian Perzlmaier

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/00

Abstract: A radiation-emitting semiconductor chip, a method for producing a plurality of radiation-emitting semiconductor chips, a radiation-emitting component and a method for producing a radiation-emitting component are disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer configured to generate electromagnetic radiation, a substrate on which the semiconductor layer sequence is arranged and which is transparent to the electromagnetic radiation, a reflective layer disposed on a main surface of the substrate facing away from the semiconductor layer sequence, the reflective layer including a resin in which reflective particles are embedded and a transparent resin layer located between the main surface of the substrate and the reflective layer.

公开(公告)号：US11107956B2

公开(公告)日：2021-08-31

申请号：US16345287

申请日：2017-11-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ivar Tangring ,  Markus Richter

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/00 ,  H01L33/62 ,  H01L33/46

Abstract: A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.