公开(公告)号：US20140306360A1

公开(公告)日：2014-10-16

申请号：US13860859

申请日：2013-04-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jin Li ,  Gang Chen ,  Yin Qian ,  Hsin-Chih Tai

IPC: G02B3/00 ,  B05D1/00 ,  B29D11/00

CPC classification number: G02B3/0018 ,  B05D1/005 ,  B29D11/00365 ,  B29D11/00384 ,  B29D11/00451 ,  G02B3/0043

Abstract: A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens.

Abstract translation: 公开了一种形成具有至少一个大面积像素和至少一个小面积像素的图像传感器的微透镜的方法。 该方法包括在大面积像素上和小区域像素上的图像传感器的光入射侧上形成均匀的微透镜材料层。 该方法还包括将微透镜材料层形成为设置在大面积像素上的第一块和设置在小面积像素上的第二块。 在第二块中还形成空隙，以减少包含在第二块中的微透镜材料的体积。 然后将第一和第二块回流以形成相应的第一微透镜和第二微透镜。 第一微透镜具有与第二微透镜基本上相同的有效焦距。

公开(公告)号：US08759934B2

公开(公告)日：2014-06-24

申请号：US13649953

申请日：2012-10-11

Applicant: Omnivision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L21/00

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US08729712B2

公开(公告)日：2014-05-20

申请号：US14052944

申请日：2013-10-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Dyson H. Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC: H01L21/00

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

Abstract translation: 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US20130032921A1

公开(公告)日：2013-02-07

申请号：US13649953

申请日：2012-10-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US12035060B2

公开(公告)日：2024-07-09

申请号：US17520466

申请日：2021-11-05

Applicant: OmniVision Technologies, Inc.

Inventor： Zhiyong Zhan ,  Yin Qian

IPC: H04N25/70 ,  G03B17/55 ,  H01L27/146 ,  H04N23/52 ,  H04N23/54 ,  H04N23/57 ,  H04N25/709 ,  H04N25/79 ,  H05K1/02 ,  H05K7/20

CPC classification number: H04N25/70 ,  G03B17/55 ,  H01L27/14601 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469 ,  H04N23/52 ,  H04N23/54 ,  H04N23/57 ,  H04N25/709 ,  H04N25/79 ,  H05K1/0203 ,  H05K1/0206 ,  H05K7/2039 ,  H05K2201/10121

Abstract: A stacked image sensor includes a signal-processing circuitry layer, a pixel-array substrate, a heat-transport layer, and a thermal via. The signal-processing circuitry layer includes a conductive pad exposed on a circuitry-layer bottom surface of the signal-processing circuitry layer. The pixel-array substrate includes a pixel array and is disposed on a circuitry-layer top surface of the signal-processing circuitry layer. The circuitry-layer top surface is between the circuitry-layer bottom surface and the pixel-array substrate. The heat-transport layer is located between the signal-processing circuitry layer and the pixel-array substrate. The thermal via thermally couples the heat-transport layer to the conductive pad.

公开(公告)号：US20230215887A1

公开(公告)日：2023-07-06

申请号：US18050402

申请日：2022-10-27

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Shao-Fan Kao ,  Tung-Ti Yeh

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685

Abstract: The invention disclose a pixel in an image sensor capable of detecting infrared light and associated fabrication method. The image sensor includes a semiconductor substrate has a first photodiode and a second photodiode adjacent to the first photodiode. A planarized dielectric layer having a recessed region is disposed on a first side of the semiconductor substrate. A first color filter disposed on the planarized dielectric layer aligned with the first photodiode and configured to transmit light of a first wavelength range. A second color filter disposed in the recessed region and on the planarized dielectric layer. The second color filter is aligned with the second photodiode, and configured to transmit light of a second wavelength range that is different from the first wavelength range. A first depth-wise thickness of the first color filter is less than a second depth-wise thickness of the second color filter.

公开(公告)号：US20220038664A1

公开(公告)日：2022-02-03

申请号：US16983844

申请日：2020-08-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Eiichi Funatsu ,  Jin Li

IPC: H04N9/04 ,  H04N11/20

Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.

公开(公告)号：US10475838B2

公开(公告)日：2019-11-12

申请号：US15714502

申请日：2017-09-25

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Chin Poh Pang ,  Boyang Zhang

IPC: H01L27/146

Abstract: An image sensor includes a multi-pixel detector. The multi-pixel detector includes a first pixel formed in a substrate and having a first photodiode region, a second pixel formed in the substrate adjacent to the first pixel and having a second photodiode region, and a microlens above both the first pixel and the second pixel. The microlens includes (a) in a first cross-sectional plane perpendicular to a top surface of the substrate and including both the first and the second photodiode regions, a first height profile having N1 local maxima, and (b) in a second cross-sectional plane perpendicular to the first cross-sectional plane and the top surface and including only one of the first and the second photodiode regions, a second height profile having N2>N1 local maxima.

公开(公告)号：US10297627B1

公开(公告)日：2019-05-21

申请号：US15806522

申请日：2017-11-08

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson Tai

IPC: H01L27/146

Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.

公开(公告)号：US10147751B2

公开(公告)日：2018-12-04

申请号：US15945530

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.