公开(公告)号：US20100112790A1

公开(公告)日：2010-05-06

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/20 ,  H01L21/268

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US07642605B2

公开(公告)日：2010-01-05

申请号：US11054384

申请日：2005-02-10

申请人： Toru Takeguchi ,  Kazuyuki Sugahara

发明人： Toru Takeguchi ,  Kazuyuki Sugahara

IPC分类号： H01L23/62

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region formed on opposing sides of the channel region, a gate insulating film provided so as to be in contact with the polysilicon film and containing oxygen, and a gate electrode provided in a position facing the channel region with the gate insulating film being interposed. The polysilicon film has a thickness larger than 50 nm and not larger than 150 nm. The polysilicon film contains hydrogen in a proportion not smaller than 0.5 atomic percent and not larger than 10 atomic percent. With such a structure, a semiconductor device attaining a large drain current and having a desired electric characteristic is provided.

摘要翻译： 半导体器件包括具有主表面的玻璃衬底，形成在主表面上的多晶硅膜，具有形成的沟道区，并且具有形成在沟道区的相对侧上的源极区和漏极区，栅极绝缘膜设置为 与多晶硅膜接触并含有氧，以及设置在与栅极绝缘膜相对的沟道区的位置的栅电极。 多晶硅膜的厚度大于50nm且不大于150nm。 多晶硅膜含有不小于0.5原子％且不大于10原子％的比例的氢。 通过这样的结构，提供了获得大的漏极电流并具有期望的电特性的半导体器件。

公开(公告)号：US20090291470A1

公开(公告)日：2009-11-26

申请号：US12010856

申请日：2008-01-30

申请人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

发明人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

IPC分类号： C12P21/02 ,  C12P19/18 ,  C12N5/10 ,  C12N15/63 ,  C07H21/04

CPC分类号： C12N9/1051 ,  C12P19/26

摘要： A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.

摘要翻译： 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA，该蛋白质含有SEQ ID NO：47至802的氨基酸序列。 ID。 NO：2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶，可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。

公开(公告)号：US07176491B2

公开(公告)日：2007-02-13

申请号：US11091570

申请日：2005-03-29

申请人： Yoshihiko Toyoda ,  Takao Sakamoto ,  Kazuyuki Sugahara

发明人： Yoshihiko Toyoda ,  Takao Sakamoto ,  Kazuyuki Sugahara

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78624 ,  H01L2029/7863

摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.

摘要翻译： 在玻璃基板上形成氮化硅膜和氧化硅膜。 在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。 在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度 金地区。

公开(公告)号：US20050048604A1

公开(公告)日：2005-03-03

申请号：US10485395

申请日：2002-08-01

申请人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

发明人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

IPC分类号： C12N15/09 ,  C12N1/15 ,  C12N1/19 ,  C12N1/21 ,  C12N5/10 ,  C12N9/10 ,  C12P19/26 ,  C12P19/28 ,  C12Q1/68 ,  C07H21/04

CPC分类号： C12N9/1051 ,  C12P19/26

摘要： A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.

摘要翻译： 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA，该蛋白质含有SEQ ID NO：47至802的氨基酸序列。 ID。 NO：2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶，可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。

公开(公告)号：US06841879B2

公开(公告)日：2005-01-11

申请号：US09970771

申请日：2001-10-05

申请人： Takaaki Murakami ,  Kazuyuki Sugahara

发明人： Takaaki Murakami ,  Kazuyuki Sugahara

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/45 ,  H01L29/78 ,  H01L23/48

CPC分类号： H01L29/66659 ,  H01L29/456 ,  H01L29/665 ,  H01L29/7835

摘要： A field-effect transistor including N−-extension regions, an N+-drain region, an N+-source region and a gate electrode at a surface of a silicon substrate. A sidewall insulating film on one of the side surfaces of the gate electrode partially covers the surface of the N−-extension region, and a sidewall insulating film on the other side surface entirely covers the N−-extension region. Further, a silicon oxide film covers the surface of N−-extension region not covered by the sidewall insulating film. Thereby, resistances of the gate electrode, source region, and drain region can be easily reduced in a transistor having extension regions, which are asymmetrical with respect to the gate electrode.

摘要翻译： 在硅衬底的表面具有N + - 延伸区域，N + - 漏极区域，N + - 源区域和栅电极的场效应晶体管。 栅电极的一个侧表面上的侧壁绝缘膜部分地覆盖N' - 延伸区域的表面，另一侧表面上的侧壁绝缘膜完全覆盖N' - 延伸区域。 此外，氧化硅膜覆盖未被侧壁绝缘膜覆盖的N - 延伸区域的表面。 因此，在具有相对于栅电极不对称的延伸区域的晶体管中，可以容易地减小栅电极，源极区和漏极区的电阻。

公开(公告)号：US5371381A

公开(公告)日：1994-12-06

申请号：US587500

申请日：1990-09-24

申请人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

发明人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/822 ,  H01L29/04 ,  H01L27/04

CPC分类号： H01L21/8221 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/045 ,  Y10S117/904 ,  Y10S148/09 ,  Y10S148/091 ,  Y10S148/093

摘要： Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising stripes of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film to melt the polycrystalline or amorphous semiconductor and scanning the energy beam in a predetermined direction such that the direction of the crystal of the semiconductor re-solidified and converted into a single crystal accords with a {111} plane, to produce the single crystal of the semiconductor device. Also disclosed is a semiconductor device produced by the method, which comprises a single crystal layer having a wide range of a crystal in a predetermined direction relative to the facial orientation of the major surface of the substrate, and has a three-dimensional semiconductor circuit element construction.

摘要翻译： 本发明公开了一种制造半导体器件的单晶层的方法，其包括以下步骤：在立方晶系的单晶半导体衬底的主表面上提供由用于接种的开口部分开的氧化物绝缘体层，提供 在包括开口部分的绝缘体层的整个表面上的多晶或非晶半导体层，然后提供保护层，该保护层至少包括反射膜或防反射膜，该反射膜或防反射膜包含预定宽度的条，相对于开口 部分并且以预定间隔，保护层能够控制对应于条纹的部分或不对应于条纹的部分的半导体层中的温度分布，从而完成用于制造半导体器件的基底，之后， 通过条纹反射照射能量束 e或抗反射膜，以熔化多晶或非晶半导体并沿预定方向扫描能量束，使得半导体晶体的方向重新固化并转换成单晶符合{111}面，至 产生半导体器件的单晶。 还公开了一种通过该方法制造的半导体器件，该半导体器件包括相对于衬底的主表面的面取向在预定方向上具有宽范围的晶体的单晶层，并且具有三维半导体电路元件 施工。

公开(公告)号：US5070030A

公开(公告)日：1991-12-03

申请号：US606828

申请日：1990-10-31

申请人： Tatsuhiko Ikeda ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Kyusaku Nishioka

发明人： Tatsuhiko Ikeda ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Kyusaku Nishioka

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L29/73

CPC分类号： H01L29/7317 ,  H01L21/28525 ,  Y10S148/011

摘要： Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a bipolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.

公开(公告)号：US4787740A

公开(公告)日：1988-11-29

申请号：US11329

申请日：1987-02-05

申请人： Yasuo Inoue ,  Tadashi Nishimura ,  Kazuyuki Sugahara ,  Shigeru Kusunoki

发明人： Yasuo Inoue ,  Tadashi Nishimura ,  Kazuyuki Sugahara ,  Shigeru Kusunoki

IPC分类号： H01L21/66 ,  G01N21/00 ,  G01N21/21 ,  G01N21/65 ,  G01N21/84

CPC分类号： G01N21/65 ,  G01N2021/656 ,  G01N2021/8477 ,  G01N21/21 ,  G01N21/658

摘要： An apparatus for determining crystal orientation comprises: a polarizer for polarizing an incident light beam; a polarization analyzer for selecting light having a selected polarization direction in Raman scattered light; and a synchronizer for enabling synchronous rotations of the polarizer and the polarization analyzer.

摘要翻译： 一种用于确定晶体取向的装置包括：用于偏振入射光束的偏振器; 偏振分析器，用于选择拉曼散射光中具有所选偏振方向的光; 以及用于实现偏振器和偏振分析器的同步旋转的同步器。

公开(公告)号：US4694143A

公开(公告)日：1987-09-15

申请号：US815069

申请日：1985-12-31

申请人： Tadashi Nishimura ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Yasuo Inoue

发明人： Tadashi Nishimura ,  Kazuyuki Sugahara ,  Shigeru Kusunoki ,  Yasuo Inoue

IPC分类号： H01L21/20 ,  C30B13/28 ,  H01L21/26 ,  H05B3/00 ,  H05B3/64 ,  F27B5/14 ,  F27D11/00

CPC分类号： C30B13/28 ,  H05B3/0047

摘要： A zone melting apparatus, in accordance with the present invention for monocrystallizing a semiconductor layer in a layered substance, includes: an upper elongated heater for zone melting of the semiconductor layer, the upper heater being disposed above and parallel to the semiconductor layer; a plurality of lower elongated heaters for heating the whole layered substance, the lower heaters being disposed in a plane below and parallel to the layered substance and the axis of each of the lower heaters being substantially perpendicular to the axis of the upper heater; a plurality of power suppliers for supplying electric power to the lower heaters; one or more temperature sensors for estimating the temperature of the layered substance; and a controller for controlling the power suppliers in response to the output of the temperature sensor(s), the controller making control so that the temperature of the central portion of the layered substance is slightly lower than that of the outer portions thereof.

摘要翻译： 根据本发明的用于使层状物质中的半导体层单晶化的区域熔化装置包括：用于半导体层的区域熔化的上部细长加热器，上部加热器设置在半导体层的上方并平行; 多个下部细长加热器，用于加热整个层状物质，下部加热器设置在层叠物质下方并平行的平面中，并且每个下部加热器的轴线基本上垂直于上部加热器的轴线; 用于向下部加热器供电的多个供电装置; 用于估计分层物质的温度的一个或多个温度传感器; 以及控制器，用于响应于温度传感器的输出来控制供电器，控制器进行控制，使得层状物质的中心部分的温度略低于其外部部分的温度。