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公开(公告)号:US10971455B2
公开(公告)日:2021-04-06
申请号:US16400264
申请日:2019-05-01
Applicant: QUALCOMM Incorporated
Inventor: Aniket Patil , Kuiwon Kang , Zhijie Wang , Ming Yi
IPC: H01L23/552 , H01L23/04 , H01L23/49 , H01L23/498 , H01L21/52 , H01L23/556
Abstract: Certain aspects of the present disclosure provide an integrated circuit (IC) package and techniques for fabricating the IC package. The IC package generally includes a substrate, an IC disposed above the substrate, and a shielding layer coupled to a layer of the substrate, wherein the shielding layer is disposed above the substrate adjacent to the IC, and below an upper surface of the IC.
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公开(公告)号:US20190067178A1
公开(公告)日:2019-02-28
申请号:US15690541
申请日:2017-08-30
Applicant: QUALCOMM Incorporated
Inventor: Kuiwon Kang , Houssam Jomaa , Layal Rouhana
IPC: H01L23/498 , H01L23/528 , H01L23/00 , H01L21/768
Abstract: Some features pertain to a substrate that includes a first dielectric, a first interconnect, and a second interconnect. The first interconnect is at least partially embedded in the first dielectric layer. The first interconnect includes a first portion and a second portion. The first portion is configured to increase reliability as compared to a substrate having only a second portion of a first interconnect. The increase in reliability due at least in part to the first portion providing additional interconnect material to mitigate interconnect material lost through electromigration. A part of the second portion (of the first interconnect) is free of the first dielectric and may be configured to be coupled to another device.
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公开(公告)号:US20240371736A1
公开(公告)日:2024-11-07
申请号:US18310331
申请日:2023-05-01
Applicant: QUALCOMM Incorporated
Inventor: Omar James Bchir , Dongming He , Ryan Lane , Kuiwon Kang , Lily Zhao
IPC: H01L23/498 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/13 , H01L23/31 , H01L23/48 , H01L25/16 , H01L25/18 , H10B80/00
Abstract: Substrate employing core with cavity embedding reduced height electrical device(s), and related integrated circuit (IC) packages and fabrication methods are also disclosed. The cavity of the core (that has one or more core layers) of the substrate includes an embedded electrical device structure that an electrical device built upon another second component(s) to make the overall height of the electrical device structure compatible with the height of the cavity of the core. In this manner, the design criteria used to select thickness or height of the core for providing the desired stability in the substrate can be incompatible with the thickness or the height of the embedded electrical device.
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公开(公告)号:US11776888B2
公开(公告)日:2023-10-03
申请号:US17334610
申请日:2021-05-28
Applicant: QUALCOMM Incorporated
Inventor: Kuiwon Kang , Hong Bok We , Chin-Kwan Kim , Milind Shah
IPC: H01L23/498 , H01L21/48 , H01L23/00
CPC classification number: H01L23/49838 , H01L21/4853 , H01L21/4857 , H01L23/49822 , H01L24/16 , H01L2224/16227 , H01L2224/16238
Abstract: A package comprising a substrate and an integrated device coupled to the substrate. The substrate includes at least one dielectric layer, a plurality of interconnects comprising a plurality of protruding pad interconnects, and a solder resist layer located over the at least one dielectric layer, the solder resist layer comprising a thickness that is greater than a thickness of the plurality of protruding pad interconnects. A protruding pad interconnect may include a first pad portion and a second pad portion.
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公开(公告)号:US11605595B2
公开(公告)日:2023-03-14
申请号:US16994398
申请日:2020-08-14
Applicant: QUALCOMM Incorporated
Inventor: Aniket Patil , Hong Bok We , Kuiwon Kang
IPC: H01L23/538 , H01L21/48
Abstract: Disclosed is an apparatus and methods for making same. The apparatus includes a first insulating layer, a first metal layer disposed on a surface of the first insulating layer, and a metallization structure embedded in the first insulating layer. The metallization structure occupies only a portion of a volume of the first insulating layer. The metallization structure has a line density greater than a line density of the first metal layer.
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公开(公告)号:US20220068780A1
公开(公告)日:2022-03-03
申请号:US17405494
申请日:2021-08-18
Applicant: QUALCOMM Incorporated
Inventor: Kuiwon Kang , Chin-Kwan Kim , Joonsuk Park
IPC: H01L23/498 , H01L23/00 , H01L21/48
Abstract: Integrated circuit (IC) package substrate with an embedded trace substrate (ETS) layer on a substrate, and related fabrication methods. The package substrate of the IC package includes an ETS layer provided on the substrate to facilitate providing higher density substrate interconnects to provide bump/solder joints for coupling a semiconductor die to the package substrate. ETS interconnects in the ETS layer in the package substrate facilitates die connections having a reduced line-spacing ratio (L/S) (e.g., 5.0 micrometers (μm)/5.0 μm or less) over substrate interconnects in a substrate. In additional exemplary aspects, raised metal pillar interconnects are formed in contact with respective ETS interconnects of the ETS layer of the package substrate to avoid or reduce metal consumption by die solder disposed on metal pillar interconnects of the ETS layer providing bump/solder joints.
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公开(公告)号:US11075260B2
公开(公告)日:2021-07-27
申请号:US16176915
申请日:2018-10-31
Applicant: QUALCOMM Incorporated
Inventor: Kuiwon Kang , Chin-Kwan Kim , Hong Bok We , Jaehyun Yeon
IPC: H01L23/498 , H01L49/02 , H01L21/56 , H01L23/31
Abstract: A device that includes a substrate, a die, and a discrete capacitor. The substrate includes a dielectric layer and a plurality of interconnects formed in the dielectric layer. The discrete capacitor is coupled to the substrate through a first solder interconnect and a second solder interconnect. The first solder interconnect and the second solder interconnect are located within the dielectric layer. The die is coupled to the substrate. In some implementations, the first solder interconnect is located in a first cavity of the dielectric layer, and the second solder interconnect is located in a second cavity of the dielectric layer. In some implementations, the substrate includes a first cavity that is filled with a first via and the first solder interconnect; and a second cavity that is filled with a second via and the second solder interconnect.
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公开(公告)号:US09679841B2
公开(公告)日:2017-06-13
申请号:US14276763
申请日:2014-05-13
Applicant: QUALCOMM Incorporated
Inventor: Houssam Wafic Jomaa , Omar James Bchir , Kuiwon Kang , Chin-Kwan Kim
IPC: H01L23/535 , H01L23/522 , H01L21/768 , H01L21/48 , H01L23/538 , H01L21/683
CPC classification number: H01L23/5226 , H01L21/4857 , H01L21/486 , H01L21/6835 , H01L21/76877 , H01L21/76895 , H01L23/5383 , H01L23/5384 , H01L2221/68345 , H01L2924/0002 , H01L2924/00
Abstract: Methods and apparatus for formation of a semiconductor substrate with photoactive dielectric material, embedded traces, a padless skip via extending through two dielectric layers, and a coreless package are provided. In one embodiment, a method for forming a core having a copper layer; laminating the copper layer a photoactive dielectric layer; forming a plurality of trace patterns in the photoactive dielectric layer; plating the plurality of trace patterns to form a plurality of traces; forming an insulating dielectric layer on the photoactive dielectric layer; forming a via through the insulating dielectric layer and the photoactive dielectric layer; forming additional routing patterns on the insulating dielectric layer; removing the core; and applying a solder mask.
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公开(公告)号:US20140247573A1
公开(公告)日:2014-09-04
申请号:US13783168
申请日:2013-03-01
Applicant: QUALCOMM INCORPORATED
Inventor: Chin-Kwan Kim , Kuiwon Kang , Omar J. Bchir
CPC classification number: H05K1/111 , G01R31/2818 , H05K1/0268 , H05K3/3452 , H05K2201/10674 , Y10T29/49004 , Y10T29/49124 , Y10T29/4913
Abstract: Some implementations provide a substrate that includes several traces, a solder resist layer covering the several traces, and a testing pad coupled to a trace from the several traces. The testing pad is at least partially exposed and at least partially free of the solder resist layer when a chip is coupled to the substrate. In some implementations, the several traces have a pitch that is 100 microns (nm) or less. In some implementations, the substrate is a package substrate. In some implementations, the package substrate is a package substrate on which a thermal compression flip chip is mounted during an assembly process. In some implementations, the testing pad is free of a direct connection with a bonding component of the chip when the chip is coupled to the substrate. In some implementations, the bonding component is one of a solder ball.
Abstract translation: 一些实施方案提供了包括几条迹线的衬底,覆盖几条迹线的阻焊层,以及耦合到几条迹线的迹线的测试焊盘。 当芯片耦合到衬底时,测试焊盘至少部分地暴露并且至少部分地不含阻焊层。 在一些实施方案中,几条迹线具有100微米(nm)或更小的间距。 在一些实施方式中,衬底是封装衬底。 在一些实施方案中,封装衬底是在组装过程期间安装热压缩倒装芯片的封装衬底。 在一些实施方案中,当芯片耦合到衬底时,测试焊盘不与芯片的焊接部件直接连接。 在一些实施方式中,接合部件是焊球之一。
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公开(公告)号:US20240355712A1
公开(公告)日:2024-10-24
申请号:US18303072
申请日:2023-04-19
Applicant: QUALCOMM Incorporated
Inventor: Michelle Yejin Kim , Hong Bok We , Joan Rey Villarba Buot , Kuiwon Kang
IPC: H01L23/488 , H01L21/48 , H01L23/14
CPC classification number: H01L23/488 , H01L21/486 , H01L23/142 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/18 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H10B80/00
Abstract: A substrate(s) for an integrated circuit (IC) package employing a metal core for improved electrical shielding and structural strength. In one aspect, a substrate comprises a core layer. The core layer comprises a metal core, the metal core having a first surface and a second surface opposite the first surface. The core layer further comprises a first insulation layer on the first surface and a second insulation layer on the second surface. The substrate further comprises a first metallization structure adjacent to the first insulation layer and a second metallization structure adjacent to the second insulation layer. The metal core provides electrical shielding of signals/power routed through the metal core for noise coupling reduction allowing a higher density of signal and power paths to be supported in substrate, while also strengthening structural integrity to prevent or reduce warpage in the IC package.
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