公开(公告)号：US20170019093A1

公开(公告)日：2017-01-19

申请号：US15157040

申请日：2016-05-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo KANDA ,  Koichi Yamazaki ,  Hiroshi Kuroiwa ,  Masatoshi Maeda ,  Tetsu Toda

IPC: H03K17/082 ,  H03K17/567 ,  H03K5/24 ,  H03K3/356 ,  H03K5/01

CPC classification number: H03K17/0822 ,  H01L23/528 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/404 ,  H01L29/7823 ,  H01L29/7835 ,  H01L2224/0603 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2924/00014 ,  H03K3/356 ,  H03K3/356113 ,  H03K5/01 ,  H03K5/04 ,  H03K5/24 ,  H03K5/2472 ,  H03K5/2481 ,  H03K17/567 ,  H03K2217/0081 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been determined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.

Abstract translation: 驱动器IC包括环形终止区域，以及分别布置在布局上的终止区域的内部和内部的第一区域和第二区域。 布置在浮动端子和第一感测节点之间并以电源电压驱动的感测MOS形成在终端区域中。 一种故障检测电路，当第一感测节点的电压高于在低侧驱动器将低侧晶体管驱动为导通状态的时间段中预先确定的判定电压时，检测故障的存在 形成在第一区域。

公开(公告)号：US20160164398A1

公开(公告)日：2016-06-09

申请号：US15043253

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Azuma Araya ,  Ryo Kanda ,  Tomonobu Kurihara ,  Tetsu Toda

IPC: H02M1/088 ,  H01L29/78 ,  H01L29/06

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: A method of controlling a power supply to a semiconductor device including a first region having a high-side drive circuit, a second region having a signal processing circuit, a low-side drive circuit and a voltage control circuit, and a separation region formed between the first and second regions and having a rectifying element, includes turning on a first control signal to the voltage control circuit, turning off the first control signal to the voltage control circuit, and repeating the turning on of the first control signal and the turning off the first control signal.

Abstract translation: 一种控制对包括具有高侧驱动电路的第一区域，具有信号处理电路的第二区域，低侧驱动电路和电压控制电路的第一区域的半导体器件的电源的控制方法以及形成在 第一和第二区域并具有整流元件，包括将第一控制信号接通到电压控制电路，将第一控制信号切断到电压控制电路，并重复第一控制信号的接通和关断 第一个控制信号。

公开(公告)号：US20160148995A1

公开(公告)日：2016-05-26

申请号：US14977355

申请日：2015-12-21

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Ryo Kanda ,  Tetsu Toda

IPC: H01L29/06 ,  H01L27/02 ,  H01L29/40 ,  H03K19/0175 ,  H01L29/78

CPC classification number: H01L29/0619 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H03K19/017509

Abstract: A semiconductor device including a first circuit region in which a first circuit whose power supply potential is a first voltage is formed; a second circuit region in which a second circuit whose power supply potential is a second voltage lower than the first voltage is formed a separation region which separates the first circuit region from the second circuit region; and a transistor which is located in the separation region and couples the second circuit to the first circuit and whose source and drain are of a first conductivity type, the separation region including an element separation film; a first field plate which overlaps with the element separation film in plan view; a plurality of conductive films which are provided over the first field plate.

Abstract translation: 一种半导体器件，包括形成第一电路的第一电路区域，其中第一电路的电源电位为第一电压; 电源电位低于第一电压的第二电压的第二电路形成第二电路区域，该分离区域将第一电路区域与第二电路区域分离; 以及晶体管，其位于所述分离区域中并且将所述第二电路耦合到所述第一电路，并且其源极和漏极是第一导电类型，所述分离区域包括元件分离膜; 在平面图中与元件分离膜重叠的第一场板; 设置在第一场板上的多个导电膜。

公开(公告)号：US09343453B2

公开(公告)日：2016-05-17

申请号：US14714111

申请日：2015-05-15

Applicant: Renesas Electronics Corporation

Inventor： Ryo Kanda ,  Tetsu Toda ,  Yasushi Nakahara ,  Yoshinori Kaya

IPC: H01L29/739 ,  H01L29/76 ,  H01L29/78 ,  H01L27/02 ,  H01L29/40 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L27/0207 ,  H01L21/761 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.

公开(公告)号：US09287256B2

公开(公告)日：2016-03-15

申请号：US14517657

申请日：2014-10-17

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Azuma Araya ,  Ryo Kanda ,  Tomonobu Kurihara ,  Tetsu Toda

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092 ,  H01L29/10 ,  H03K17/687

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second conductivity type region, an element isolation film, a first insulation layer, and a first conductive film. A first contact is coupled to the first high concentration second conductivity type region, and a second contact is coupled to the second high concentration second conductivity type region. A third contact is coupled to the first conductive film. The first contact, the second contact and the third contact are separated from each other.

Abstract translation: 提供了包括第一导电类型的衬底，第一电路区域，分离区域，第二电路区域和整流元件的半导体器件。 整流元件具有第二导电类型层，第一高浓度第二导电类型区域，第二高浓度第二导电类型区域，元件隔离膜，第一绝缘层和第一导电膜。 第一触点耦合到第一高浓度第二导电类型区域，第二触点耦合到第二高浓度第二导电类型区域。 第三触点耦合到第一导电膜。 第一触点，第二触点和第三触点彼此分离。