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    MEMS VIBRATING STRUCTURE USING AN ORIENTATION DEPENDENT SINGLE-CRYSTAL PIEZOELECTRIC THIN FILM LAYER
    11.
    发明申请
    MEMS VIBRATING STRUCTURE USING AN ORIENTATION DEPENDENT SINGLE-CRYSTAL PIEZOELECTRIC THIN FILM LAYER 有权
    使用方向依赖的单晶压电薄膜层的MEMS振动结构

    公开(公告)号：US20140210315A1

    公开(公告)日：2014-07-31

    申请号：US14031454

    申请日：2013-09-19

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee ,  Sergei Zhgoon

    IPC: H03H9/17

    CPC classification number: H03H9/17 ,  H03H2009/155

    Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, a first conducting layer, and a second conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The first conducting layer is inter-digitally dispersed on the second surface of the single-crystal piezoelectric body. The second conducting layer is inter-digitally dispersed on the first surface of the single-crystal piezoelectric body.

    Abstract translation: 微电气机械系统（MEMS）振动结构包括载体基板，第一锚固件，第二锚固件，单晶体压电体，第一导电层和第二导电层。 第一锚固件和第二锚固件设置在载体基板的表面上。 单晶压电体悬挂在第一锚和第二锚之间，并且包括由一组欧拉角定义的均匀结晶取向。 单晶体压电体包括平行于并面向其上形成有第一锚和第二锚的载体基板的表面的第一表面和与第一表面相对的第二表面。 第一导电层以数字方式分散在单晶体压电体的第二表面上。 第二导电层被数字地分散在单晶体压电体的第一表面上。

    Multi-frequency guided wave devices and fabrication methods
    12.
    发明授权
    Multi-frequency guided wave devices and fabrication methods 有权

    公开(公告)号：US10348269B2

    公开(公告)日：2019-07-09

    申请号：US14972929

    申请日：2015-12-17

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H03H3/02 ,  H01L41/047 ,  H01L41/312 ,  H03H9/02 ,  H03H9/25 ,  H01L41/33

    Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a piezoelectric layer including multiple thinned regions of different thicknesses each bounding in part a different recess, different groups of electrodes on or adjacent to different thinned regions and arranged for transduction of lateral acoustic waves of different wavelengths in the different thinned regions, and at least one bonded interface between the piezoelectric layer and a substrate. Optionally, a buffer layer may be intermediately bonded between the piezoelectric layer and the substrate. Methods of producing such devices include locally thinning a piezoelectric layer to define multiple recesses, bonding the piezoelectric layer on or over a substrate layer to cause the recesses to be bounded in part by either the substrate or an optional buffer layer, and defining multiple groups of electrodes on or over the different thinned regions.

    Guided wave devices with selectively loaded piezoelectric layers
    13.
    发明授权
    Guided wave devices with selectively loaded piezoelectric layers 有权

    公开(公告)号：US10326426B2

    公开(公告)日：2019-06-18

    申请号：US15087277

    申请日：2016-03-31

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H03H9/25 ,  H03H9/02 ,  H03H3/08 ,  H03H3/007 ,  H03H3/02 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/00 ,  H03H9/15 ,  H03H9/05

    Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

    PLATE WAVE DEVICES WITH WAVE CONFINEMENT STRUCTURES AND FABRICATION METHODS
    16.
    发明申请
    PLATE WAVE DEVICES WITH WAVE CONFINEMENT STRUCTURES AND FABRICATION METHODS 审中-公开
    具有波形结构和制造方法的平板波浪装置

    公开(公告)号：US20160182007A1

    公开(公告)日：2016-06-23

    申请号：US14973295

    申请日：2015-12-17

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H03H9/02 ,  H03H3/02 ,  H01L41/33 ,  H01L41/047 ,  H01L41/312

    CPC classification number: H03H9/02244 ,  H01L41/047 ,  H01L41/312 ,  H01L41/33 ,  H03H3/02 ,  H03H9/02228 ,  H03H9/02275 ,  H03H9/02574 ,  H03H9/25 ,  H03H2003/027

    Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.

    Abstract translation: 微机电系统（MEMS）导波装置包括单晶压电层和至少一个被配置为将横向激发的波限制在单晶压电层中的导波约束结构。 在单晶压电层和至少一个下层之间提供键合界面。 多频器件包括布置在单晶压电层的不同厚度区域上或其中的至少一个导波限制结构的第一组电极和第二组电极。 分段压电层和分段电极层的段基本上记录在包括至少一个导波限制结构的装置中。

    Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs
    17.
    发明授权
    Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs 有权
    使用双压电晶片的单晶压电MEMS器件中的可调谐和可切换谐振器和滤波器结构

    公开(公告)号：US09117593B2

    公开(公告)日：2015-08-25

    申请号：US14071173

    申请日：2013-11-04

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H03H9/46 ,  H03H9/54 ,  H01G5/18 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

    CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

    Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

    Abstract translation: MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。

    ENHANCED MEMS VIBRATING DEVICE
    19.
    发明申请
    ENHANCED MEMS VIBRATING DEVICE 有权
    增强MEMS振动器件

    公开(公告)号：US20150318838A1

    公开(公告)日：2015-11-05

    申请号：US14703060

    申请日：2015-05-04

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee ,  Sergei Zhgoon

    IPC: H03H9/02 ,  H03H9/17

    CPC classification number: H03H9/02228 ,  H03H9/02338 ,  H03H9/172 ,  H03H2009/155 ,  H03H2009/241

    Abstract: A MEMS vibrating device includes a substrate, at least one anchor on a surface of the substrate, and a vibrating body suspended over the substrate by the at least one anchor. The vibrating body includes a first piezoelectric thin-film layer, a second piezoelectric thin-film layer over the first piezoelectric thin-film layer, and an inter-digital transducer embedded between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer. Embedding the inter-digital transducer between the first piezoelectric thin-film layer and the second piezoelectric thin-film layer may result in enhanced vibrational characteristics of the MEMS vibrating device, thereby increasing the performance thereof.

    Abstract translation: MEMS振动装置包括基板，在基板的表面上的至少一个锚定件以及通过至少一个锚悬挂在基板上的振动体。 振动体包括第一压电薄膜层，第一压电薄膜层上的第二压电薄膜层和嵌入在第一压电薄膜层和第二压电薄膜之间的数字间换能器 层。 在第一压电薄膜层和第二压电薄膜层之间嵌入数字式换能器可能导致MEMS振动装置的振动特性的增强，从而提高其性能。

    MEMS RESONATOR WITH FUNCTIONAL LAYERS
    20.
    发明申请
    MEMS RESONATOR WITH FUNCTIONAL LAYERS 有权
    具有功能层的MEMS谐振器

    公开(公告)号：US20150288345A1

    公开(公告)日：2015-10-08

    申请号：US14679379

    申请日：2015-04-06

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H03H9/17

    CPC classification number: H03H9/17 ,  H03H2009/155

    Abstract: A MEMS device includes a substrate, at least one anchor on a surface of the substrate, and a vibrating body suspended over the substrate by the at least one anchor. The vibrating body includes a periodically poled piezoelectric thin-film layer, a first conductive layer, a second conductive layer, and a functional layer. The first conductive layer is on a first surface of the vibrating body opposite the surface of the substrate. The second conductive layer is on a second surface of the vibrating body opposite the first surface. The functional layer is over the first conductive layer. By including the functional layer over the first conductive layer, functionality may be added to the MEMS device, thereby increasing the utility thereof.

    Abstract translation: MEMS器件包括衬底，衬底的表面上的至少一个锚固体和通过至少一个锚悬挂在衬底上的振动体。 振动体包括周期性极化的压电薄膜层，第一导电层，第二导电层和功能层。 第一导电层位于与基板表面相对的振动体的第一表面上。 第二导电层位于与第一表面相对的振动体的第二表面上。 功能层在第一导电层之上。 通过在第一导电层上包括功能层，可以将功能性添加到MEMS器件，从而增加其功能。

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