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公开(公告)号：US20170213734A9
公开(公告)日：2017-07-27
申请号：US12533984
申请日：2009-07-31
IPC分类号： H01L21/306 , C23C16/513
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
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12.发明授权公开(公告)号：US08450635B2
公开(公告)日：2013-05-28
申请号：US12047813
申请日：2008-03-13
IPC分类号： B23K10/00
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.
摘要翻译： 公开了一种处理衬底的方法。 该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。 该方法还包括将无源射频（RF）电路耦合到第二电极，被动RF电路被配置为调节第二电极上的RF阻抗，RF电压电位和DC偏置电位中的一个或多个。
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13.发明授权Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法公开(公告)号：US07837826B2
公开(公告)日：2010-11-23
申请号：US11487999
申请日：2006-07-18
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。
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公开(公告)号：US20080241420A1
公开(公告)日：2008-10-02
申请号：US12047820
申请日：2008-03-13
IPC分类号： H05H1/24
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译： 在等离子体处理室中，提供了一种处理基板的方法。 该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合 导电耦合环耦合到LE以提供导电路径。 该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。 该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源，以及 负直流电源通过RF滤波器控制等离子体处理参数。
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15.发明授权Capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate 有权具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统公开(公告)号：US09251999B2
公开(公告)日：2016-02-02
申请号：US13526391
申请日：2012-06-18
IPC分类号： H01J37/32 , H01L21/306 , G03F7/42 , H01L21/311
CPC分类号： H01J37/32174 , G03F7/427 , H01J37/32091 , H01J37/32128 , H01J37/32165 , H01J37/32532 , H01L21/306 , H01L21/31138
摘要： A capacitively-coupled plasma processing system having a plasma processing chamber for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate, the substrate being disposed on the lower electrode during plasma processing. The plasma processing system further includes means for providing at least a first RF signal to the lower electrode, the first RF signal having a first RF frequency. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The plasma processing system further includes means for rectifying the induced RF signal to generate a rectified RF signal such that the rectified RF signal is more positively biased than negatively biased, wherein the substrate is configured to be processed while the rectified RF signal is provided to the upper electrode.
摘要翻译： 提供了具有用于处理衬底的等离子体处理室的电容耦合等离子体处理系统。 等离子体处理系统至少包括用于处理衬底的上电极和下电极，衬底在等离子体处理期间设置在下电极上。 等离子体处理系统还包括用于向下电极提供至少第一RF信号的装置，第一RF信号具有第一RF频率。 第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。 等离子体处理系统还包括用于整流感应RF信号以产生经整流的RF信号的装置，使得整流的RF信号比负偏置更积极地偏置，其中衬底被配置为在被整流的RF信号被提供给 上电极。
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公开(公告)号：US20120312780A1
公开(公告)日：2012-12-13
申请号：US13592262
申请日：2012-08-22
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency, A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%, The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译： 一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法。 在等离子体处理期间，衬底设置在下电极上。 该方法包括向下电极提供至少具有第一RF频率的第一RF信号。 第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。 该方法还包括向上电极提供第二RF信号。 第二RF信号也具有第一RF频率，第二RF信号的A相从第一RF信号的相位偏移小于10％的值。该方法还包括处理衬底，而第二RF信号 被提供给上电极。
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公开(公告)号：US20100252199A1
公开(公告)日：2010-10-07
申请号：US12533984
申请日：2009-07-31
IPC分类号： H01L21/306 , C23C16/513
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
摘要翻译： 一种与气体一起使用的等离子体处理系统。 等离子体处理系统包括第一电极，第二电极，气体输入端口，电源和无源电路。 气体输入端口可操作以在第一电极和第二电极之间提供气体。 电源可操作地从第一电极和第二电极之间的气体点燃等离子体。 无源电路耦合到第二电极，并且被配置为调节第二电极的阻抗，电压电位和DC偏置电位中的一个或多个。 无源射频电路包括与电感器并联布置的电容器。
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公开(公告)号：US08898889B2
公开(公告)日：2014-12-02
申请号：US13419369
申请日：2012-03-13
IPC分类号： B23P19/00 , H01J37/32 , H01L21/683
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。
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公开(公告)号：US08652298B2
公开(公告)日：2014-02-18
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。
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20.发明申请METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM 有权在等离子体处理系统中选择性地修改射频电流的方法和装置公开(公告)号：US20130240482A1
公开(公告)日：2013-09-19
申请号：US13423281
申请日：2012-03-19
CPC分类号： H01J37/32935 , C23C16/4585 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32697 , H01J37/32715 , H01J37/3299 , H01J2237/327 , H01J2237/3343
摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.
摘要翻译： 公开了用于修改RF电流路径长度的方法和装置。 装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。 包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。 包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个 的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。
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