LED headlamp system
    11.
    发明申请
    LED headlamp system 有权
    LED头灯系统

    公开(公告)号:US20090213606A1

    公开(公告)日:2009-08-27

    申请号:US11991013

    申请日:2006-08-23

    IPC分类号: F21S8/10 F21V5/00

    摘要: A solid-state light source (10) comprising a plurality of LED units (12) arrayed to emit light generally about an axis (14). Each of the LED units (12) can comprise a number of LEDs, for example, up to five. They may all emit in a single color or multiple colors can be combined for a specific effect. A light transmissive light guide (16) is associated with the LED units (12) and has a plurality of input widows (18). Each LED unit (12) faces a respective input window (18) and each window (18) transversely intercepts the axis (14) and receives light from the LED units (12). The input windows (18) lead to a common output window (20) that is axially aligned with the input windows (18). The light guide (16) has smooth sidewalls (22) that extend between the input windows (18) and the output window (20).

    摘要翻译: 一种固态光源(10),包括排列成通常围绕轴线(14)发光的多个LED单元(12)。 每个LED单元(12)可以包括多个LED,例如多达五个。 它们都可以以单一颜色发射,或者可以组合多种颜色以获得特定的效果。 透光导光体(16)与LED单元(12)相关联并且具有多个输入寡子(18)。 每个LED单元(12)面对相应的输入窗口(18),并且每个窗口(18)横向截取轴线(14)并且接收来自LED单元(12)的光。 输入窗口(18)导致与输入窗口(18)轴向对齐的公共输出窗口(20)。 光导(16)具有在输入窗(18)和输出窗(20)之间延伸的平滑侧壁(22)。

    LED Headlamp System
    12.
    发明申请
    LED Headlamp System 有权
    LED头灯系统

    公开(公告)号:US20090034278A1

    公开(公告)日:2009-02-05

    申请号:US11885626

    申请日:2006-03-03

    IPC分类号: F21V9/00

    摘要: A vehicle headlamp includes a first planar array of low and high beam LED light sources; a first primary optical light guide receiving low and high beam light from the LEDs; a first secondary optical light guide receiving and focusing collimated low and high beam light from the first primary light guide as a combination of low and high beam hot spots; a second planar array of LED light sources having a low and high beam LEDs; a second primary optical light guide receiving and collimating low and high beam light from second LED light sources; a second secondary optical light guide receiving said collimated low and high beam light and spreading the light as a combination of low and high beam spread pattern; a housing to mechanically support the LED arrays, the first primary optic, the first secondary optic, the second primary light guide and the second secondary optic.

    摘要翻译: 车辆前照灯包括低光束和远光LED光源的第一平面阵列; 第一主光学导光板,其接收来自LED的低光束和远光; 第一次级光学导光器将来自第一主光导的准直的低光束和远光束作为低光束和高光束热点的组合接收和聚焦; 具有低光束和高光束LED的第二平面LED阵列阵列; 第二主光学光导,其接收和准直来自第二LED光源的低光束和远光; 接收所述准直的低光束和远光束并且将光作为低光束和高光束扩展图案的组合进行扩展的第二次级光学光导; 用于机械地支撑LED阵列的壳体,第一主光学元件,第一次光学元件,第二主光导和第二次光学元件。

    Light emitting diode with direct view optic
    13.
    发明申请
    Light emitting diode with direct view optic 有权
    具有直视光源的发光二极管

    公开(公告)号:US20070295978A1

    公开(公告)日:2007-12-27

    申请号:US11474553

    申请日:2006-06-26

    IPC分类号: H01L33/00 H01L21/00

    摘要: An LED and light guide assembly has an LED with an output surface; a first power input lead electrically coupled to a first pole and having a first surface and a second surface; and a second power input lead electrically coupled to a second pole and having a first surface and a second surface. A unitary, molded light guide has an axially extending, light transmissive body with a light output window. An input window is formed with the unitary, molded light guide being aligned in a zero-gap relationship to capture substantially all the light emitted by the LED. A support is formed integral with the light guide and envelopes a portion of the first surface and the second surface of the first power input lead and the first surface and the second surface of the second power input lead to anchor the guide with respect to the power inputs.

    摘要翻译: LED和导光组件具有带有输出表面的LED; 电耦合到第一极并具有第一表面和第二表面的第一电力输入引线; 以及电耦合到第二极并具有第一表面和第二表面的第二电力输入引线。 单一的模制光导件具有带有光输出窗口的轴向延伸的透光体。 形成一个输入窗口,该单一模制光导件以零间隙关系对准,以基本上捕获由LED发射的所有光。 支撑件与光导成一体,并且包围第一电源输入引线的第一表面和第二表面的一部分以及第二电源输入引线的第一表面和第二表面,以相对于电源锚定引导件 输入。

    PASSIVATION OF VCSEL SIDEWALLS
    15.
    发明申请
    PASSIVATION OF VCSEL SIDEWALLS 有权
    VCSEL SIDEWALLS的钝化

    公开(公告)号:US20070254393A1

    公开(公告)日:2007-11-01

    申请号:US11767388

    申请日:2007-06-22

    申请人: Ralph Johnson

    发明人: Ralph Johnson

    IPC分类号: H01L21/02

    摘要: A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.

    摘要翻译: 配置用于VCSEL或RCLED的半导体结构。 半导体结构包括由在光刻过程中可被氧化以产生氧化物孔的材料构成的氧化层。 半导体结构还包括靠近氧化层的多个层。 钝化材料设置在氧化层附近的层上。 钝化材料被配置为抑制层的氧化。

    POLARIZATION CONTROL IN VERTICAL CAVITY SURFACE EMITTING LASERS USING OFF-AXIS EPITAXY
    16.
    发明申请
    POLARIZATION CONTROL IN VERTICAL CAVITY SURFACE EMITTING LASERS USING OFF-AXIS EPITAXY 审中-公开
    使用离轴外形的垂直孔表面发射激光器的极化控制

    公开(公告)号:US20070098032A1

    公开(公告)日:2007-05-03

    申请号:US11549516

    申请日:2006-10-13

    申请人: Ralph Johnson

    发明人: Ralph Johnson

    IPC分类号: H01S5/00 H01L21/00

    摘要: A polarization pinned long wavelength vertical cavity surface emitting laser (VCSEL). The VCSEL includes a III V semiconductor substrate. A bottom DBR mirror is formed on the semiconductor substrate. An active region is formed in an off-axis orientation on the bottom DBR mirror. The active region includes a surfactant that suppresses unwanted three dimensional growth. A top DBR mirror formed on the active region.

    摘要翻译: 偏振锁定长波长垂直腔表面发射激光器(VCSEL)。 VCSEL包括IIIV半导体衬底。 在半导体衬底上形成底部DBR反射镜。 在底部DBR镜上以偏轴取向形成有源区。 活性区域包括抑制不想要的三维生长的表面活性剂。 在活动区域​​上形成顶部DBR镜。

    Grating-coupled surface emitting laser with gallium arsenide substrate
    17.
    发明申请
    Grating-coupled surface emitting laser with gallium arsenide substrate 审中-公开
    光栅耦合表面发射激光器与砷化镓衬底

    公开(公告)号:US20060198412A1

    公开(公告)日:2006-09-07

    申请号:US11369716

    申请日:2006-03-07

    申请人: Ralph Johnson

    发明人: Ralph Johnson

    IPC分类号: H01S5/00 H01S3/08

    CPC分类号: H01S5/18

    摘要: This disclosure concerns grating-coupled surface emitting (GSE) lasers with Gallium Arsenide (GaAs) substrates. In one example, a GSE laser includes a GaAs substrate, a lower cladding layer disposed on the substrate, a Dilute Nitride active region disposed on the lower cladding layer, and an upper cladding layer disposed on the active region.

    摘要翻译: 本公开涉及具有砷化镓(GaAs)衬底的光栅耦合表面发射(GSE)激光器。 在一个示例中,GSE激光器包括GaAs衬底,设置在衬底上的下覆盖层,设置在下包层上的稀土氮化物有源区和设置在有源区上的上覆层。

    High density LED array
    18.
    发明申请
    High density LED array 有权
    高密度LED阵列

    公开(公告)号:US20050281025A1

    公开(公告)日:2005-12-22

    申请号:US10984457

    申请日:2004-11-09

    摘要: A high-density LED array (10) capable of presenting a density of X LEDs/unit area has a first printed circuit board (12) having X/2 LEDs/area and X/2 apertures arrayed therewith. A second printed circuit board (22) is spaced from the first printed circuit board (12) and has X/2 LEDs 28/unit area. The LEDs (28) on the second printed circuit board are aligned with the apertures (20) in the first printed circuit board. Each of the LEDs (28) on the second printed circuit board (22) has an optical fiber (30) associated therewith and each of the light guides (30) extends through one of the apterures (20). Each of the mounted LEDs on the first printed circuit board can have an optical fiber associated therewith and the light guides can be bundled to direct light to a remote source.

    摘要翻译: 能够呈现X LED /单位面积的密度的高密度LED阵列(10)具有第一印刷电路板(12),其具有X / 2 LED /面积和与其排列的X / 2孔径。 第二印刷电路板(22)与第一印刷电路板(12)间隔开并且具有X / 2 LED 28 /单位面积。 第二印刷电路板上的LED(28)与第一印刷电路板中的孔(20)对齐。 第二印刷电路板(22)上的每个LED(28)具有与其相关联的光纤(30),并且每个光导(30)延伸穿过其中一个(20)。 第一印刷电路板上的每个安装的LED可以具有与之相关联的光纤,并且光束可以被捆扎以将光引导到远程源。

    Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells
    19.
    发明申请
    Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells 失效
    在GaAsN势垒层和InGaAsN量子阱中使用Sb的长波长VCSEL有源区

    公开(公告)号:US20050243888A1

    公开(公告)日:2005-11-03

    申请号:US10836176

    申请日:2004-04-30

    申请人: Ralph Johnson

    发明人: Ralph Johnson

    摘要: Disclosed is a structure for an active region of a GaAs based VCSEL with strong optical output substantially within the range of 1.3 μm and potentially for the 1.5 um range, making it well suited for the transmissivity of silica core fiberoptics. The active region of the VCSEL incorporates antimony in the quantum wells and portions of the barriers. The presence of Sb substantially smooths the surface of the barriers and quantum wells during the process of beam epitaxy, causing a higher critical thickness of each of the layers, thereby enabling fabrication with significantly reduced defects.

    摘要翻译: 公开了一种基于GaAs的VCSEL的有源区的结构,其具有基本上在1.3μm范围内的强光学输出,并且潜在地为1.5μm的范围,使得其非常适合于硅芯光纤的透射率。 VCSEL的有源区域在量子阱和屏障的一部分中并入锑。 在光束外延过程中,Sb的存在使得势垒和量子阱的表面基本上平滑,从而导致每个层的更高的临界厚度,从而能够以显着减少的缺陷进行制造。