Photoresist topcoat for a photolithographic process
    15.
    发明授权
    Photoresist topcoat for a photolithographic process 有权
    光刻面漆,用于光刻工艺

    公开(公告)号:US07910290B2

    公开(公告)日:2011-03-22

    申请号:US12128129

    申请日:2008-05-28

    摘要: A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

    摘要翻译: 使用面漆组合物形成图像的方法。 提供了式TmR3的官能化多面体低聚倍半硅氧烷衍生物,其中m等于8,10或12,QnMnR1,R2,R3其中n等于8,10或12的组合物。 官能团包括碱水溶性部分。 官能化多面体低聚倍半硅氧烷衍生物的混合物非常适合用作光刻和浸没光刻应用中的光致抗蚀剂的顶涂层。