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公开(公告)号：US5065441A
公开(公告)日：1991-11-12
申请号：US544663
申请日：1990-06-27
CPC分类号： H04N1/4056
摘要： An image processing apparatus for processing an image signal, comprising a clock for generating a periodical clock signal, a pattern signal generator for generating 2N (where N is a positive integer) pattern signals, each of the pattern signals having a constant wave-form, a wave length of 2N times longer than that of the periodical clock signal and a phase difference 360/2N relative to another one of the pattern signals, a comparator for comparing the pattern signals with the image signal and for generating 2N of comparison signals, and a composition generator for combining said 2N comparison signals and for generating a pulse-duration modulated signal from the combined 2N comparison signals.
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12.发明授权
公开(公告)号：US4872033A
公开(公告)日：1989-10-03
申请号：US317078
申请日：1989-02-28
CPC分类号： G03B27/32 , G03B27/588 , G03D3/132
摘要： Present invention provides an image forming apparatus capable of forming an image on various kinds of photosensitive material by subjecting the photosensitive material to an image forming process having at least imagewise exposing, developing, and fixing process on a process condition determined in accordance with a kind of the photosensitive material. While processing certain kind of photosensitive material, a kind discriminator detects a new kind of photosensitive material being subjected a current image forming process, CPU inhibits a new image forming process until judging a predetermined process of the current image forming process as being completed from a signal of a process monitor.
摘要翻译： 本发明提供了一种图像形成装置，其能够通过对感光材料进行至少成像曝光，显影和定影处理的图像形成处理，在根据一种 感光材料。 在处理某种感光材料的同时，种类识别器检测正在进行当前图像形成处理的新型感光材料，CPU禁止新的图像形成处理，直到从信号完成当前图像形成处理的预定处理 的过程监视器。
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公开(公告)号：US07959737B2
公开(公告)日：2011-06-14
申请号：US11905628
申请日：2007-10-02
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605 , Y10S134/902
摘要： A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.
摘要翻译： 使用半导体工艺的成膜装置的方法包括：第一清洗处理，其将第一清洗气体从成膜装置的反应室的内表面除去副产物膜，同时将第一清洗气体供给到 反应室，并将反应室的内部设置在第一温度和第一压力下以启动第一清洁气体。 该方法还包括第二清洁过程，然后在将第二清洁气体供应到反应室中时，由第二清洁气体从反应室的内表面除去污染物，并将反应室的内部设定在第二温度 以及第二压力来启动第二清洁气体。 第二清洗气体包括含氯气体。
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公开(公告)号：US07923357B2
公开(公告)日：2011-04-12
申请号：US12285574
申请日：2008-10-08
CPC分类号： H01L21/28035 , C23C16/24 , C23C16/56 , H01L21/0257 , H01L21/02573 , H01L21/0262 , H01L21/02667
摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.
摘要翻译： 用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于 用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在 目标基板。
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15.发明申请Method of cleaning thin film deposition system, thin film deposition system and program 审中-公开清洗薄膜沉积系统，薄膜沉积系统和程序的方法公开(公告)号：US20060081182A1
公开(公告)日：2006-04-20
申请号：US11246290
申请日：2005-10-11
CPC分类号： C23C16/4405
摘要： A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls a heating means so as to heat the interior of a reaction tube 2 at a temperature in the range of 400° C. to 700° C. The controller 100 controls a cleaning gas supply means for supplying a cleaning gas containing fluorine and hydrogen fluoride through a process gas supply pipe 17 into the reaction tube 2 to remove deposits deposited on surfaces exposed to an atmosphere in the reaction tube 2.
摘要翻译： 薄膜沉积系统清洁方法能够有效地去除沉积在薄膜沉积系统的部件的表面上的反应产物。 能够进行薄膜沉积系统清洗方法的热处理系统1包括控制器100。 控制器100控制加热装置，以便在400℃至700℃范围内的温度下加热反应管2的内部。控制器100控制用于供应含有氟的清洁气体的清洁气体供应装置 和氟化氢通过工艺气体供给管17进入反应管2，以去除沉积在暴露于反应管2中的气氛的表面上的沉积物。
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公开(公告)号：US5677235A
公开(公告)日：1997-10-14
申请号：US600146
申请日：1996-02-12
IPC分类号： H01L21/205 , C23C16/24 , C30B29/06 , H01L21/20
CPC分类号： C23C16/24
摘要： A number of semiconductor wafers are retained in a wafer boat such that the wafers are disposed at intervals in the vertical direction. The wafer boat is loaded into a process tube of a vertical type thermal processing apparatus. The inside of the process tube is heated to 300.degree. to 530.degree. C. in a depressurized atmosphere, and a process gas including a disilane gas is fed into the process tube such that the disilane gas flows at a flow rate of 300 SCCM or more, thereby to form silicon films.
摘要翻译： 许多半导体晶片被保留在晶片舟皿中，使得晶片在垂直方向上间隔设置。 将晶片舟装载到垂直型热处理装置的处理管中。 在减压气氛中将处理管的内部加热至300℃至530℃，并且将包含乙硅烷气体的工艺气体供给到处理管中，使得乙硅烷气体以300SCCM以上的流量流动 ，从而形成硅膜。
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公开(公告)号：US5622566A
公开(公告)日：1997-04-22
申请号：US424473
申请日：1995-05-10
IPC分类号： C23C16/455 , H01L21/205 , H01L21/00
CPC分类号： C23C16/45561 , C23C16/455 , H01L21/02422 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A film-forming apparatus for forming an impurity-doped film on an object such as a semiconductor wafer has an elongated reaction tube located such that its longitudinal direction is identical to the vertical direction, and having an object arrangement region in which a plurality of objects or semiconductor wafers to be processed can be arranged at intervals in the vertical direction. A film-forming gas is introduced into the reaction tube through a film-forming gas introduction pipe. This apparatus also has a main dopant gas introduction pipe, having a gas outlet located below the object arrangement region in the reaction tube, for introducing a dopant gas into the reaction tube and guiding the same upward, at least one sub dopant gas introduction pipe, having a gas outlet located above the object arrangement region in the reaction tube, for introducing the same dopant gas as the first-mentioned one into the reaction tube so as to compensate for insufficient supply of the dopant gas through the main dopant gas introduction pipe, an exhaustion system for exhausting the gases in the reaction tube, and a heating unit for heating the interior of the reaction tube.
摘要翻译： PCT No.PCT / JP94 / 01526 Sec。 371日期：1995年5月10日 102（e）日期1995年5月10日PCT 1994年9月16日PCT PCT。 出版物WO95 / 08185 日期1995年3月23日在半导体晶片等物体上形成杂质掺杂膜的成膜装置具有伸长的反应管，其长度方向与上下方向一致， 可以在垂直方向上间隔布置要处理的多个物体或半导体晶片。 成膜气体通过成膜气体引入管被引入到反应管中。 该装置还具有主要的掺杂剂气体引入管，其具有位于反应管中的物体排列区域下方的气体出口，用于将掺杂剂气体引入反应管并引导相同的向上的至少一个子掺杂剂气体导入管， 具有位于反应管中的物体排列区域上方的气体出口，用于将与前述相同的掺杂气体引入反应管中，以补偿通过主要掺杂剂气体导入管的掺杂剂气体供应不足， 用于排出反应管中的气体的耗尽系统和用于加热反应管内部的加热单元。
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18.发明授权Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily 失效一种其中处理容器中的反应副产物的分压暂时降低的成膜方法
公开(公告)号：US5503875A
公开(公告)日：1996-04-02
申请号：US214109
申请日：1994-03-17
申请人： Masayuki Imai , Toshiharu Nishimura
发明人： Masayuki Imai , Toshiharu Nishimura
IPC分类号： H01L21/31 , C23C16/44 , C23C16/458 , H01L21/316 , H01L21/318 , C23C16/52
CPC分类号： C23C16/4412 , C23C16/4584
摘要： A film is formed on a substrate by supplying a plurality of processing gases into a processing container and forming the film on the substrate from the processing gases while exhausting a portion of the gases out of the processing container. Before a partial pressure of a byproduct in the processing container produced through chemical reaction of the processing gases reaches an equilibrium state, the partial pressure of the byproduct in the processing container is temporarily reduced by temporarily suppressing or stopping the supply of at least one of the processing gases into the processing container and exhausting gas from the processing container.
摘要翻译： 通过将多种处理气体供给到处理容器中，并且在将一部分气体排出处理容器的同时从处理气体在基板上形成膜而在基板上形成膜。 在通过处理气体的化学反应产生的处理容器中的副产物的分压达到平衡状态之前，暂时抑制或停止供给至少一个的处理容器中副产物的分压 将处理气体加工到处理容器中并从处理容器排出气体。
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公开(公告)号：US07470637B2
公开(公告)日：2008-12-30
申请号：US11090082
申请日：2005-03-28
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , C23C16/4404 , H01L21/0217 , H01L21/02271 , H01L21/3185
摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.
摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含氟和氟化氢。 第二温度在300至800℃的范围内。
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公开(公告)号：US20060068598A1
公开(公告)日：2006-03-30
申请号：US11090082
申请日：2005-03-28
IPC分类号： H01L21/31
CPC分类号： C23C16/4405 , C23C16/4404 , H01L21/0217 , H01L21/02271 , H01L21/3185
摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.
摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含氟和氟化氢。 第二温度在300至800℃的范围内。
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