公开(公告)号：US06177352B1

公开(公告)日：2001-01-23

申请号：US09250868

申请日：1999-02-16

申请人： Olaf Schönfeld ,  Ernst Nirschl

发明人： Olaf Schönfeld ,  Ernst Nirschl

IPC分类号： H01L21316

CPC分类号： H01L33/0095 ,  H01L21/30621 ,  H01L21/78 ,  H01L33/0062 ,  H01L33/20 ,  H01L33/22

摘要： A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.

摘要翻译： 一种通过金属有机气相外延（MOVPE）生产至少一个半导体主体的方法。 半导体本体由具有施加到半导体晶片的有源区的层序列形成。 通过干蚀刻，层序列设置有至少一个台面沟槽，其深度至少足以使得层序列的活性区域被切断。 接下来，包括半导体晶片和层序列的复合物被切断，使得至少一个半导体本体具有至少一个台面边缘。

公开(公告)号：US5972781A

公开(公告)日：1999-10-26

申请号：US940465

申请日：1997-09-30

申请人： Walter Wegleiter ,  Olaf Schoenfeld ,  Muk Wai Lui ,  Ernst Nirschl

发明人： Walter Wegleiter ,  Olaf Schoenfeld ,  Muk Wai Lui ,  Ernst Nirschl

IPC分类号： H01L21/301 ,  H01L21/78

CPC分类号： H01L21/78

摘要： Semiconductor chips are produced from a wafer. The semiconductor chips are separated from one another by etching the wafer all the way through, by a dry etching process, in defined separation zones between the semiconductor chips. Initially, first etching trenches for separating the p-n junctions are etched into the wafer. Then, second etching trenches are etched from the opposite side of the wafer until the individual semiconductor chips are completely separated.

摘要翻译： 半导体芯片由晶片制造。 半导体芯片通过在半导体芯片之间的限定分离区域中通过干法蚀刻工艺蚀刻晶片而彼此分离。 首先，将用于分离p-n结的第一蚀刻沟槽蚀刻到晶片中。 然后，从晶片的相对侧蚀刻第二蚀刻沟槽，直到各个半导体芯片完全分离。

公开(公告)号：US5614736A

公开(公告)日：1997-03-25

申请号：US533053

申请日：1995-09-25

申请人： Gerald Neumann ,  Ernst Nirschl ,  Werner Spaeth

发明人： Gerald Neumann ,  Ernst Nirschl ,  Werner Spaeth

IPC分类号： H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L23/48 ,  H01L29/46

CPC分类号： H01L33/40 ,  H01L33/30 ,  H01L33/38

摘要： A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.

摘要翻译： 发光二极管包括掺杂半导体衬底晶片，其具有适合于外延涂覆在其上的绿色光谱范围内的发光的层序列。 将锌掺杂的触点施加到晶片的p导电侧，以有效地产生纯绿光发射。 在掺杂锌的触点和p导电晶片侧之间设置导电层，以在二极管制造期间抑制氧向p导电晶片侧的扩散。

公开(公告)号：US07135711B2

公开(公告)日：2006-11-14

申请号：US10488487

申请日：2002-08-30

申请人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

发明人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

IPC分类号： H01L29/22 ,  H01L29/227

CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/46

摘要： An electroluminescent component (1), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component (1) has a substrate (2); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate (2) and having an active layer stack (7) with an emission zone (8); and a contact element (9) on each radiation decoupling element (4). The contact elements (9), whose width (b′) is dimensioned such that it is less than the width (b) of the radiation decoupling elements (4), are arranged centrally on the radiation decoupling elements (4), and the width (b) of the radiation decoupling elements (4), for a given height (h), is chosen to be so small that a substantial proportion of the light (11) radiated laterally from the emission zone (8) can be decoupled directly through the side areas (12) of the radiation decoupling elements (4).

摘要翻译： 电致发光元件（1），特别是LED芯片，结合简单的结构具有高的外部效率。 电致发光部件（1）具有基板（2）。 在衬底（2）上彼此相邻布置的多个辐射去耦元件，并具有带有发射区（8）的有源层堆叠（7）。 和每个辐射去耦元件（4）上的接触元件（9）。 尺寸小于辐射去耦元件（4）的宽度（b）的宽度（b'）的接触元件（9）被集中布置在辐射去耦元件（4）上，宽度 对于给定的高度（h），辐射去耦元件（4）的（b）被选择为非常小，使得从发射区（8）横向辐射的大部分光（11）可以直接通过 辐射去耦元件（4）的侧面区域（12）。

公开(公告)号：US20050001223A1

公开(公告)日：2005-01-06

申请号：US10488487

申请日：2002-08-30

申请人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

发明人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

IPC分类号： H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/46 ,  H01L33/00 ,  H01L31/12

CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/46

摘要： An electroluminescent component (1), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component (1) has a substrate (2); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate (2) and having an active layer stack (7) with an emission zone (8); and a contact element (9) on each radiation decoupling element (4). The contact elements (9), whose width (b′) is dimensioned such that it is less than the width (b) of the radiation decoupling elements (4), are arranged centrally on the radiation decoupling elements (4), and the width (b) of the radiation decoupling elements (4), for a given height (h), is chosen to be so small that a substantial proportion of the light (11) radiated laterally from the emission zone (8) can be decoupled directly through the side areas (12) of the radiation decoupling elements (4).

摘要翻译： 电致发光元件（1），特别是LED芯片，结合简单的结构具有高的外部效率。 电致发光部件（1）具有基板（2）。 在衬底（2）上彼此相邻布置的多个辐射去耦元件，并具有带有发射区（8）的有源层堆叠（7）。 和每个辐射去耦元件（4）上的接触元件（9）。 尺寸小于辐射去耦元件（4）的宽度（b）的宽度（b'）的接触元件（9）被集中布置在辐射去耦元件（4）上，宽度 对于给定的高度（h），辐射去耦元件（4）的（b）被选择为非常小，使得从发射区（8）横向辐射的大部分光（11）可以直接通过 辐射去耦元件（4）的侧面区域（12）。

公开(公告)号：US06221683B1

公开(公告)日：2001-04-24

申请号：US09450398

申请日：1999-11-29

申请人： Ernst Nirschl ,  Olaf Schönfeld

发明人： Ernst Nirschl ,  Olaf Schönfeld

IPC分类号： H01L2100

CPC分类号： H01L33/40 ,  H01L33/0079

摘要： The invention relates to a method for producing a light-emitting component. A sequence of layers including at least one active layer is formed on the front face of a basic substrate consisting of semiconductor material. Subsequently, the basic substrate is at least partially removed and the sequence of layers is connected to an external substrate. The basic substrate is removed by wet-chemical etching in an etching agent that acts selectively on the material of the basic substrate. A first metallic contact layer is then applied to an end surface of the sequence of layers, and a second metallic contact layer is applied to an end surface of the external substrate. The sequence of layers is connected to the external substrate by connecting the first metallic contact layer to the second metallic contact layer using heat, by means of eutectic bonding.

摘要翻译： 本发明涉及一种发光元件的制造方法。 包括至少一个有源层的层序列形成在由半导体材料构成的基底衬底的正面上。 随后，基本衬底被至少部分去除，并且层序连接到外部衬底。 通过湿法化学蚀刻在基体衬底的材料上有选择地作用的蚀刻剂去除基本衬底。 然后将第一金属接触层施加到该层序列的端面，并且将第二金属接触层施加到外部基板的端表面。 通过共晶接合，通过使用热将第一金属接触层连接到第二金属接触层来将层序连接到外部基板。

公开(公告)号：US06531405B1

公开(公告)日：2003-03-11

申请号：US09250877

申请日：1999-02-16

申请人： Walter Wegleiter ,  Ernst Nirschl ,  Helmut Fischer

发明人： Walter Wegleiter ,  Ernst Nirschl ,  Helmut Fischer

IPC分类号： H01L21302

CPC分类号： H01L33/025 ,  H01L31/02363 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting and/or light-receiving semiconductor body is produced with one or more semiconductor layers composed of GaAsxP1−x, where 0≦x

摘要翻译： 制造具有由GaAs xP 1-x组成的一个或多个半导体层的发光和/或光接收半导体本体，其中0 <= x <1。 在第一蚀刻步骤中首先用蚀刻溶液H 2 SO 4 :H 2 O 2 :H 2 O处理半导体层表面的至少一部分，然后在第二蚀刻步骤中用氢氟酸处理。 蚀刻导致半导体层的表面的处理部分上的表面粗糙度。