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    Gallium phosphate light emitting diode with zinc-doped contact
    1.
    发明授权
    Gallium phosphate light emitting diode with zinc-doped contact 失效
    具有锌掺杂接触的磷酸铟发光二极管

    公开(公告)号：US5614736A

    公开(公告)日：1997-03-25

    申请号：US533053

    申请日：1995-09-25

    申请人： Gerald Neumann ,  Ernst Nirschl ,  Werner Spaeth

    发明人： Gerald Neumann ,  Ernst Nirschl ,  Werner Spaeth

    IPC分类号： H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L23/48 ,  H01L29/46

    CPC分类号： H01L33/40 ,  H01L33/30 ,  H01L33/38

    摘要： A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.

    摘要翻译： 发光二极管包括掺杂半导体衬底晶片，其具有适合于外延涂覆在其上的绿色光谱范围内的发光的层序列。 将锌掺杂的触点施加到晶片的p导电侧，以有效地产生纯绿光发射。 在掺杂锌的触点和p导电晶片侧之间设置导电层，以在二极管制造期间抑制氧向p导电晶片侧的扩散。

    Radiation emitter component
    2.
    发明授权
    Radiation emitter component 失效
    辐射发射器组件

    公开(公告)号：US5999552A

    公开(公告)日：1999-12-07

    申请号：US9606

    申请日：1998-01-20

    申请人： Georg Bogner ,  Herbert Brunner ,  Heinz Haas ,  Johann Luft ,  Ernst Nirschl ,  Werner Spaeth ,  Norbert Stath ,  Wolfgang Teich

    发明人： Georg Bogner ,  Herbert Brunner ,  Heinz Haas ,  Johann Luft ,  Ernst Nirschl ,  Werner Spaeth ,  Norbert Stath ,  Wolfgang Teich

    IPC分类号： H01L33/56 ,  H01S3/00 ,  H01S5/00 ,  H01S5/022 ,  H01S3/18 ,  H01L33/00

    CPC分类号： H01S5/02244 ,  H01S5/02228 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L33/56

    摘要： A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

    摘要翻译： 辐射发射器部件，特别是具有传统发光二极管外壳的红外发射器部件包括两个电极连接件，其中之一具有良好形状的反射器。 壳体具有光学透明的非导电封装材料。 将半导体激光芯片紧固在发光二极管壳体的形状好的反射器中。 半导体激光芯片具有量子阱结构，特别是具有应变层结构，例如具有层序列GaAlAs-InGaAs-GaAlAs的MOVPE外延层。 漫射材料可以插入到发光二极管外壳的光学透明的非导电材料中。 关于类型和浓度来构造或插入扩散材料，使得与封装在发光二极管外壳中的半导体激光器芯片有关，产生辐射特性曲线或有效发射表面的增加，即， 与传统的红外发光二极管相当。

    Process for producing a semiconductor device with a roughened semiconductor surface
    7.
    发明授权
    Process for producing a semiconductor device with a roughened semiconductor surface 有权
    用于生产具有粗糙化的半导体表面的半导体器件的工艺

    公开(公告)号：US06309953B1

    公开(公告)日：2001-10-30

    申请号：US09517299

    申请日：2000-03-02

    申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    IPC分类号： H01L2128

    CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/00

    摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an AlxGa1−xAs layer with an upper surface, where x≦0.40; applying a contact metallization made of a non-noble metallic material to the AlxGa1−xAs layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the AlxGa1−xAs layer by etching with an etching mixture of hydrogen peroxide ≧30% and hydrofluoric acid ≧40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0≦x≦1 and the upper surface of the AlxGa1−xAs layer is roughened by etching with nitric acid 65% at temperatures of between 0° C. and 30° C.

    摘要翻译： 制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <= 0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> = 30％和氢氟酸≥40％（1000:6）的蚀刻混合物蚀刻1至2.5分钟来使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。

    Process for producing a semiconductor device with a roughened semiconductor surface
    8.
    发明授权
    Process for producing a semiconductor device with a roughened semiconductor surface 失效
    用于生产具有粗糙化的半导体表面的半导体器件的工艺

    公开(公告)号：US6140248A

    公开(公告)日：2000-10-31

    申请号：US918251

    申请日：1997-08-25

    申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    IPC分类号： H01L29/06 ,  H01L33/22 ,  H01L33/40 ,  H01L21/302

    CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157

    摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.

    摘要翻译： 一种制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> 30％和氢氟酸≥40％（1000:6）的蚀刻混合物进行1〜2.5分钟的时间，使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。

    Method for producing semiconductor bodies with an MOVPE layer sequence
    10.
    发明授权
    Method for producing semiconductor bodies with an MOVPE layer sequence 失效
    制造具有MOVPE层序的半导体体的方法

    公开(公告)号：US06177352B1

    公开(公告)日：2001-01-23

    申请号：US09250868

    申请日：1999-02-16

    申请人： Olaf Schönfeld ,  Ernst Nirschl

    发明人： Olaf Schönfeld ,  Ernst Nirschl

    IPC分类号： H01L21316

    CPC分类号： H01L33/0095 ,  H01L21/30621 ,  H01L21/78 ,  H01L33/0062 ,  H01L33/20 ,  H01L33/22

    摘要： A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.

    摘要翻译： 一种通过金属有机气相外延（MOVPE）生产至少一个半导体主体的方法。 半导体本体由具有施加到半导体晶片的有源区的层序列形成。 通过干蚀刻，层序列设置有至少一个台面沟槽，其深度至少足以使得层序列的活性区域被切断。 接下来，包括半导体晶片和层序列的复合物被切断，使得至少一个半导体本体具有至少一个台面边缘。