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    Electroluminescent body
    1.
    发明授权
    Electroluminescent body 有权
    电致发光体

    公开(公告)号：US07135711B2

    公开(公告)日：2006-11-14

    申请号：US10488487

    申请日：2002-08-30

    申请人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

    发明人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

    IPC分类号： H01L29/22 ,  H01L29/227

    CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/46

    摘要： An electroluminescent component (1), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component (1) has a substrate (2); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate (2) and having an active layer stack (7) with an emission zone (8); and a contact element (9) on each radiation decoupling element (4). The contact elements (9), whose width (b′) is dimensioned such that it is less than the width (b) of the radiation decoupling elements (4), are arranged centrally on the radiation decoupling elements (4), and the width (b) of the radiation decoupling elements (4), for a given height (h), is chosen to be so small that a substantial proportion of the light (11) radiated laterally from the emission zone (8) can be decoupled directly through the side areas (12) of the radiation decoupling elements (4).

    摘要翻译： 电致发光元件（1），特别是LED芯片，结合简单的结构具有高的外部效率。 电致发光部件（1）具有基板（2）。 在衬底（2）上彼此相邻布置的多个辐射去耦元件，并具有带有发射区（8）的有源层堆叠（7）。 和每个辐射去耦元件（4）上的接触元件（9）。 尺寸小于辐射去耦元件（4）的宽度（b）的宽度（b'）的接触元件（9）被集中布置在辐射去耦元件（4）上，宽度 对于给定的高度（h），辐射去耦元件（4）的（b）被选择为非常小，使得从发射区（8）横向辐射的大部分光（11）可以直接通过 辐射去耦元件（4）的侧面区域（12）。

    Electroluminescent body
    2.
    发明申请
    Electroluminescent body 有权
    电致发光体

    公开(公告)号：US20050001223A1

    公开(公告)日：2005-01-06

    申请号：US10488487

    申请日：2002-08-30

    申请人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

    发明人： Norbert Linder ,  Ernst Nirschl ,  Werner Spath

    IPC分类号： H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/46 ,  H01L33/00 ,  H01L31/12

    CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/46

    摘要： An electroluminescent component (1), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component (1) has a substrate (2); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate (2) and having an active layer stack (7) with an emission zone (8); and a contact element (9) on each radiation decoupling element (4). The contact elements (9), whose width (b′) is dimensioned such that it is less than the width (b) of the radiation decoupling elements (4), are arranged centrally on the radiation decoupling elements (4), and the width (b) of the radiation decoupling elements (4), for a given height (h), is chosen to be so small that a substantial proportion of the light (11) radiated laterally from the emission zone (8) can be decoupled directly through the side areas (12) of the radiation decoupling elements (4).

    摘要翻译： 电致发光元件（1），特别是LED芯片，结合简单的结构具有高的外部效率。 电致发光部件（1）具有基板（2）。 在衬底（2）上彼此相邻布置的多个辐射去耦元件，并具有带有发射区（8）的有源层堆叠（7）。 和每个辐射去耦元件（4）上的接触元件（9）。 尺寸小于辐射去耦元件（4）的宽度（b）的宽度（b'）的接触元件（9）被集中布置在辐射去耦元件（4）上，宽度 对于给定的高度（h），辐射去耦元件（4）的（b）被选择为非常小，使得从发射区（8）横向辐射的大部分光（11）可以直接通过 辐射去耦元件（4）的侧面区域（12）。

    Process for producing a semiconductor device with a roughened semiconductor surface
    5.
    发明授权
    Process for producing a semiconductor device with a roughened semiconductor surface 有权
    用于生产具有粗糙化的半导体表面的半导体器件的工艺

    公开(公告)号：US06309953B1

    公开(公告)日：2001-10-30

    申请号：US09517299

    申请日：2000-03-02

    申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    IPC分类号： H01L2128

    CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/00

    摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an AlxGa1−xAs layer with an upper surface, where x≦0.40; applying a contact metallization made of a non-noble metallic material to the AlxGa1−xAs layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the AlxGa1−xAs layer by etching with an etching mixture of hydrogen peroxide ≧30% and hydrofluoric acid ≧40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0≦x≦1 and the upper surface of the AlxGa1−xAs layer is roughened by etching with nitric acid 65% at temperatures of between 0° C. and 30° C.

    摘要翻译： 制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <= 0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> = 30％和氢氟酸≥40％（1000:6）的蚀刻混合物蚀刻1至2.5分钟来使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。

    Process for producing a semiconductor device with a roughened semiconductor surface
    6.
    发明授权
    Process for producing a semiconductor device with a roughened semiconductor surface 失效
    用于生产具有粗糙化的半导体表面的半导体器件的工艺

    公开(公告)号：US6140248A

    公开(公告)日：2000-10-31

    申请号：US918251

    申请日：1997-08-25

    申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

    IPC分类号： H01L29/06 ,  H01L33/22 ,  H01L33/40 ,  H01L21/302

    CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157

    摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.

    摘要翻译： 一种制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> 30％和氢氟酸≥40％（1000:6）的蚀刻混合物进行1〜2.5分钟的时间，使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。

    Radiation emitter component
    7.
    发明授权
    Radiation emitter component 失效
    辐射发射器组件

    公开(公告)号：US5999552A

    公开(公告)日：1999-12-07

    申请号：US9606

    申请日：1998-01-20

    申请人： Georg Bogner ,  Herbert Brunner ,  Heinz Haas ,  Johann Luft ,  Ernst Nirschl ,  Werner Spaeth ,  Norbert Stath ,  Wolfgang Teich

    发明人： Georg Bogner ,  Herbert Brunner ,  Heinz Haas ,  Johann Luft ,  Ernst Nirschl ,  Werner Spaeth ,  Norbert Stath ,  Wolfgang Teich

    IPC分类号： H01L33/56 ,  H01S3/00 ,  H01S5/00 ,  H01S5/022 ,  H01S3/18 ,  H01L33/00

    CPC分类号： H01S5/02244 ,  H01S5/02228 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L33/56

    摘要： A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

    摘要翻译： 辐射发射器部件，特别是具有传统发光二极管外壳的红外发射器部件包括两个电极连接件，其中之一具有良好形状的反射器。 壳体具有光学透明的非导电封装材料。 将半导体激光芯片紧固在发光二极管壳体的形状好的反射器中。 半导体激光芯片具有量子阱结构，特别是具有应变层结构，例如具有层序列GaAlAs-InGaAs-GaAlAs的MOVPE外延层。 漫射材料可以插入到发光二极管外壳的光学透明的非导电材料中。 关于类型和浓度来构造或插入扩散材料，使得与封装在发光二极管外壳中的半导体激光器芯片有关，产生辐射特性曲线或有效发射表面的增加，即， 与传统的红外发光二极管相当。

    Method for producing semiconductor bodies with an MOVPE layer sequence
    8.
    发明授权
    Method for producing semiconductor bodies with an MOVPE layer sequence 失效
    制造具有MOVPE层序的半导体体的方法

    公开(公告)号：US06177352B1

    公开(公告)日：2001-01-23

    申请号：US09250868

    申请日：1999-02-16

    申请人： Olaf Schönfeld ,  Ernst Nirschl

    发明人： Olaf Schönfeld ,  Ernst Nirschl

    IPC分类号： H01L21316

    CPC分类号： H01L33/0095 ,  H01L21/30621 ,  H01L21/78 ,  H01L33/0062 ,  H01L33/20 ,  H01L33/22

    摘要： A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.

    摘要翻译： 一种通过金属有机气相外延（MOVPE）生产至少一个半导体主体的方法。 半导体本体由具有施加到半导体晶片的有源区的层序列形成。 通过干蚀刻，层序列设置有至少一个台面沟槽，其深度至少足以使得层序列的活性区域被切断。 接下来，包括半导体晶片和层序列的复合物被切断，使得至少一个半导体本体具有至少一个台面边缘。

    Method for producing semiconductor chips
    9.
    发明授权
    Method for producing semiconductor chips 失效
    半导体芯片的制造方法

    公开(公告)号：US5972781A

    公开(公告)日：1999-10-26

    申请号：US940465

    申请日：1997-09-30

    申请人： Walter Wegleiter ,  Olaf Schoenfeld ,  Muk Wai Lui ,  Ernst Nirschl

    发明人： Walter Wegleiter ,  Olaf Schoenfeld ,  Muk Wai Lui ,  Ernst Nirschl

    IPC分类号： H01L21/301 ,  H01L21/78

    CPC分类号： H01L21/78

    摘要： Semiconductor chips are produced from a wafer. The semiconductor chips are separated from one another by etching the wafer all the way through, by a dry etching process, in defined separation zones between the semiconductor chips. Initially, first etching trenches for separating the p-n junctions are etched into the wafer. Then, second etching trenches are etched from the opposite side of the wafer until the individual semiconductor chips are completely separated.

    摘要翻译： 半导体芯片由晶片制造。 半导体芯片通过在半导体芯片之间的限定分离区域中通过干法蚀刻工艺蚀刻晶片而彼此分离。 首先，将用于分离p-n结的第一蚀刻沟槽蚀刻到晶片中。 然后，从晶片的相对侧蚀刻第二蚀刻沟槽，直到各个半导体芯片完全分离。

    Gallium phosphate light emitting diode with zinc-doped contact
    10.
    发明授权
    Gallium phosphate light emitting diode with zinc-doped contact 失效
    具有锌掺杂接触的磷酸铟发光二极管

    公开(公告)号：US5614736A

    公开(公告)日：1997-03-25

    申请号：US533053

    申请日：1995-09-25

    申请人： Gerald Neumann ,  Ernst Nirschl ,  Werner Spaeth

    发明人： Gerald Neumann ,  Ernst Nirschl ,  Werner Spaeth

    IPC分类号： H01L33/30 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L23/48 ,  H01L29/46

    CPC分类号： H01L33/40 ,  H01L33/30 ,  H01L33/38

    摘要： A light emitting diode includes a doped semiconductor substrate wafer with a layer sequence suitable for light emission in the green spectral range epitaxially applied thereon. A zinc-doped contact is applied to the p-conductive side of the wafer for efficient generation of pure green light emissions. An electrically conductive layer is provided between the zinc-doped contact and the p-conductive wafer side to suppress diffusion of oxygen into the p-conductive wafer side during diode manufacture.

    摘要翻译： 发光二极管包括掺杂半导体衬底晶片，其具有适合于外延涂覆在其上的绿色光谱范围内的发光的层序列。 将锌掺杂的触点施加到晶片的p导电侧，以有效地产生纯绿光发射。 在掺杂锌的触点和p导电晶片侧之间设置导电层，以在二极管制造期间抑制氧向p导电晶片侧的扩散。