Method for producing semiconductor chips
    1.
    发明授权
    Method for producing semiconductor chips 失效
    半导体芯片的制造方法

    公开(公告)号:US5972781A

    公开(公告)日:1999-10-26

    申请号:US940465

    申请日:1997-09-30

    IPC分类号: H01L21/301 H01L21/78

    CPC分类号: H01L21/78

    摘要: Semiconductor chips are produced from a wafer. The semiconductor chips are separated from one another by etching the wafer all the way through, by a dry etching process, in defined separation zones between the semiconductor chips. Initially, first etching trenches for separating the p-n junctions are etched into the wafer. Then, second etching trenches are etched from the opposite side of the wafer until the individual semiconductor chips are completely separated.

    摘要翻译: 半导体芯片由晶片制造。 半导体芯片通过在半导体芯片之间的限定分离区域中通过干法蚀刻工艺蚀刻晶片而彼此分离。 首先,将用于分离p-n结的第一蚀刻沟槽蚀刻到晶片中。 然后,从晶片的相对侧蚀刻第二蚀刻沟槽,直到各个半导体芯片完全分离。

    Optoelectronic semiconductor chip, optoelectronic component and a method for producing an optoelectronic component

    公开(公告)号:US08749025B2

    公开(公告)日:2014-06-10

    申请号:US12678363

    申请日:2008-09-24

    IPC分类号: H01L21/00 H01L33/00

    摘要: A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.

    Light-Emitting Module and Method of Manufacture for a Light-Emitting Module
    8.
    发明申请
    Light-Emitting Module and Method of Manufacture for a Light-Emitting Module 有权
    发光模块和发光模块的制造方法

    公开(公告)号:US20100117103A1

    公开(公告)日:2010-05-13

    申请号:US12529137

    申请日:2008-02-29

    IPC分类号: H01L33/00 H01L21/30

    摘要: A light-emitting module includes a supporting element, a number of optoelectronic semiconductor components mounted on the supporting element for the generation of electromagnetic radiation, and a metallic connecting layer by means of which the optoelectronic semiconductor components are supplied with operating voltage. An insulation layer is arranged in a region of the optoelectronic semiconductor components between the supporting element and the metallic connecting layer. The metallic connecting layer forms a light shade for the optoelectronic semiconductor components, so that the electromagnetic radiation is only emitted in a specified direction.

    摘要翻译: 发光模块包括支撑元件,安装在用于产生电磁辐射的支撑元件上的多个光电子半导体元件,以及金属连接层,通过该金属连接层向光电半导体元件提供工作电压。 绝缘层布置在支撑元件和金属连接层之间的光电子半导体部件的区域中。 金属连接层形成光电子半导体部件的光阴,使得电磁辐射仅沿指定方向发射。

    Radiation-emitting semiconductor component
    9.
    发明授权
    Radiation-emitting semiconductor component 失效
    辐射发射半导体元件

    公开(公告)号:US06828597B2

    公开(公告)日:2004-12-07

    申请号:US10237472

    申请日:2002-09-09

    IPC分类号: H01L2922

    摘要: In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a back side of the semiconductor body for impressing a current into the semiconductor body containing the active layer, the back-side contact comprises a plurality of contact locations spaced from one another, whereby the size of the contact locations increases with increasing distance from the central front-side contact.

    摘要翻译: 在具有半导体主体的辐射发射半导体部件中,该半导体器件包括辐射发生有源层,在半导体本体的前侧具有中心前侧接触和在半导体本体的背面上具有背面接触, 将电流施加到包含有源层的半导体本体中,背面接触包括彼此间隔开的多个接触位置,由此随着距离中心前侧接触件的距离的增加,接触位置的大小增加。