公开(公告)号：US11888059B2

公开(公告)日：2024-01-30

申请号：US17349327

申请日：2021-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC: H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831

Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US20210351457A1

公开(公告)日：2021-11-11

申请号：US17029440

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongsik Ko ,  Hyukjae Kwon ,  Jaejoon Oh

IPC: H01M10/6556 ,  H01M10/48 ,  H01M10/63

Abstract: A metal-air battery apparatus includes an inlet module and a main module each having a metal-air battery cell structure including a positive electrode and a negative electrode. The inlet module and the main module are electrically controlled and independently controlled from each other, and a channel through which a fluid such as air flows is defined between the inlet module and the main module. A temperature of the inlet module and a temperature of the main module are independently controlled by adjusting a discharge current density or by charging or a temperature adjustor.

公开(公告)号：US11069802B2

公开(公告)日：2021-07-20

申请号：US16703128

申请日：2019-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US12278281B2

公开(公告)日：2025-04-15

申请号：US17475700

申请日：2021-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunkyu Hwang ,  Jaejoon Oh ,  Jongseob Kim

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47

Abstract: A high electron mobility transistor (HEMT) includes an active region, in which a channel is formed, and a field region surrounding the active region. The HEMT may include a channel layer; a barrier layer on the channel layer and configured to induce a two-dimensional electron gas (2DEG) in the channel layer; a source and a drain on the barrier layer in the active region; and a gate on the barrier layer. The gate may protrude from the active region to the field region on the barrier layer. The gate may include a first gate and a second gate. The first gate may be in the active region and the second gate may be in the boundary region between the active region and the field region. A work function of the second gate may be different from a work function of the first gate.

公开(公告)号：US12119397B2

公开(公告)日：2024-10-15

申请号：US17465212

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunkyu Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Jaejoon Oh ,  Injun Hwang

IPC: H01L29/00 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66431

Abstract: A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.

公开(公告)号：US12002879B2

公开(公告)日：2024-06-04

申请号：US17098896

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunkyu Hwang ,  Joonyong Kim ,  Jongseob Kim ,  Junhyuk Park ,  Boram Kim ,  Younghwan Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Injun Hwang

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/66462 ,  H01L29/7787

Abstract: Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

公开(公告)号：US11837642B2

公开(公告)日：2023-12-05

申请号：US17016877

申请日：2020-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soogine Chong ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Sunkyu Hwang ,  Injun Hwang

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/285 ,  H01L21/765 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/42316 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/28587 ,  H01L21/765 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

公开(公告)号：US11784367B2

公开(公告)日：2023-10-10

申请号：US17983854

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongsik Ko ,  Hyukjae Kwon ,  Jaejoon Oh

IPC: H01M10/6556 ,  H01M10/63 ,  H01M10/48

CPC classification number: H01M10/6556 ,  H01M10/486 ,  H01M10/63

Abstract: A method of controlling a temperature of metal-air battery apparatus includes measuring the temperature of the metal-air battery apparatus to obtain the temperature and a temperature deviation of the metal-air battery apparatus, comparing the measured temperature and the temperature deviation of the metal-air battery apparatus with a preset temperature and a preset temperature deviation, respectively; and adjusting the temperature of an inlet module or a main module when the measured temperature of the metal-air battery apparatus is less than the preset temperature or the temperature deviation of the metal-air battery apparatus is greater than the preset temperature deviation.

公开(公告)号：US20230077105A1

公开(公告)日：2023-03-09

申请号：US17983854

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongsik Ko ,  Hyukjae Kwon ,  Jaejoon Oh

IPC: H01M10/6556 ,  H01M10/63 ,  H01M10/48

Abstract: A metal-air battery apparatus includes an inlet module and a main module each having a metal-air battery cell structure including a positive electrode and a negative electrode. The inlet module and the main module are electrically controlled and independently controlled from each other, and a channel through which a fluid such as air flows is defined between the inlet module and the main module. A temperature of the inlet module and a temperature of the main module are independently controlled by adjusting a discharge current density or by charging or a temperature adjustor.

公开(公告)号：US11522240B2

公开(公告)日：2022-12-06

申请号：US17029440

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongsik Ko ,  Hyukjae Kwon ,  Jaejoon Oh

IPC: H01M10/63 ,  H01M10/6556 ,  H01M10/48

Abstract: A metal-air battery apparatus includes an inlet module and a main module each having a metal-air battery cell structure including a positive electrode and a negative electrode. The inlet module and the main module are electrically controlled and independently controlled from each other, and a channel through which a fluid such as air flows is defined between the inlet module and the main module. A temperature of the inlet module and a temperature of the main module are independently controlled by adjusting a discharge current density or by charging or a temperature adjustor.