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公开(公告)号：US20200213660A1
公开(公告)日：2020-07-02
申请号：US16713788
申请日：2019-12-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeki KYOUN , Heejin KO , Hyunjee KWAK , Sunyoung KIM , Seungmin LEE , Yoojin CHOI , Jeonghye CHOI
IPC: H04N21/431 , H04N21/443 , H04N21/81 , H04N21/422
Abstract: A display device includes a display configured to output a broadcast content or a content for an interior decoration function, a memory storing a first layout for surrounding the broadcast content and a second layout for surrounding the content for the interior decoration function, and a processor operatively connected to the display and the memory, wherein the processor removes the first layout, enlarges the broadcast content, and outputs the enlarged broadcast content through the display based on a first user input, and enlarges portions of the content for the interior decoration function and of the second layout and outputs the enlarged portions of the content for the interior decoration function and of the second layout through the display based on a second user input.
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公开(公告)号：US20230341170A1
公开(公告)日：2023-10-26
申请号：US18216971
申请日：2023-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungmin LEE , Jeongman NAM , Sangchul RYU
CPC classification number: F25D21/14 , F25D11/02 , F25D2321/143 , F25D2321/1441
Abstract: A refrigerator includes: an inner case defining a storage room; an outer case coupled to an outer side of the inner case; an insulator between the inner case and the outer case; an evaporator disposed on a rear inner surface of the inner case; and a drain device disposed below the evaporator and configured to drain defrost water falling from the evaporator, wherein the drain device may include: an upper insulator disposed on the rear inner surface of the inner case; a drain housing disposed below the upper insulator and through with the defrost water is drained; and a middle insulator disposed on a lower portion of the upper insulator, such that the drain housing is between the upper insulator and the middle insulator, the middle insulator including a fixing portion to which the drain housing is fixed.
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公开(公告)号：US20220182707A1
公开(公告)日：2022-06-09
申请号：US17680568
申请日：2022-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeki KYOUN , Heejin KO , Hyunjee KWAK , Sunyoung KIM , Seungmin LEE , Yoojin CHOI , Jeonghye CHOI
IPC: H04N21/431 , H04N21/422 , H04N21/443 , H04N21/81
Abstract: A display device includes a display configured to output a broadcast content or a content for an interior decoration function, a memory storing a first layout for surrounding the broadcast content and a second layout for surrounding the content for the interior decoration function, and a processor operatively connected to the display and the memory, wherein the processor removes the first layout, enlarges the broadcast content, and outputs the enlarged broadcast content through the display based on a first user input, and enlarges portions of the content for the interior decoration function and of the second layout and outputs the enlarged portions of the content for the interior decoration function and of the second layout through the display based on a second user input.
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公开(公告)号：US20240324206A1
公开(公告)日：2024-09-26
申请号：US18581174
申请日：2024-02-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Byungik YOO , Seungbeom KO , Taemok GWON , Changjin SON , Chadong YEO , Seulji LEE , Seungmin LEE
Abstract: A nonvolatile memory device includes a substrate including a memory cell region and a connection region; a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked; a channel structure passing through the mold structure in the memory cell region; a first cell contact passing through the mold structure in the connection region, connected to a first gate electrode and electrically disconnected from a second gate electrode; a plurality of support structures surrounding the first cell contact planarly in the connection region and extending through the mold structure; and a dam structure located between the first cell contact and the second gate electrode in the connection region and apart from the first cell contact with an insulating ring therebetween.
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公开(公告)号：US20240169627A1
公开(公告)日：2024-05-23
申请号：US18426635
申请日：2024-01-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yongjin SO , Hyunjee KWAK , Eunhee PARK , Seungmin LEE , Eunjin LEE
CPC classification number: G06T11/60 , G06T5/20 , G06T7/60 , G06T7/90 , G06T2207/10024
Abstract: In an electronic apparatus and a control method therefor, the electronic apparatus comprises a memory, a display, and a processor to process at least one image information stored in the memory. The processor can identify the ratio and dominant color of at least one image based on the at least one image information, identify the type of layout based on the number of the at least one image and the identified ratio of the at least one image, arrange the at least one image in the identified type of the layout, identify the color for the layout based on the size of the arranged image and the identified dominant color, and display, on the display, the layout in which the identified color is arranged and the at least one image is arranged.
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Patent Agency Ranking
公开(公告)号：US20240142882A1
公开(公告)日：2024-05-02
申请号：US18382349
申请日：2023-10-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Thanh Cuong NGUYEN , Jiyoung PARK , Jungah Kim , Seungmin LEE , Inkook JANG
CPC classification number: G03F7/70525 , G03F7/40 , H01L21/0274
Abstract: A method for discovering a new photoresist dissolvent includes obtaining input data defining a ligand material, estimating a reaction energy of a ligand exchange reaction in which a first ligand of a first complex including a first metal and the first ligand is exchanged with a second ligand, based on the input data, estimating a residual concentration of the first metal corresponding to the reaction energy based on a physical model, and verifying a photoresist dissolvent providing the second ligand based on the residual concentration.
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公开(公告)号：US20230171965A1
公开(公告)日：2023-06-01
申请号：US18070789
申请日：2022-11-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungmin LEE , Kwanyong KIM , Jihwan YU
CPC classification number: H01L27/11573 , H01L27/11524 , H01L23/5283 , H01L27/11526 , H01L27/11556 , H01L27/1157 , H01L27/11582
Abstract: A semiconductor device including a stack structure including gate stack and dummy stack regions; a vertical memory structure penetrating through the gate stack region; and a first vertical dummy structure penetrating through a portion of the dummy stack region, wherein the gate stack region includes interlayer insulating and gate layers alternately and repeatedly stacked on each other, the dummy stack region includes dummy insulating and dummy horizontal layers alternately and repeatedly stacked on each other, at least one of the dummy horizontal layers and the gate layers include materials different from each other, an upper surface of the vertical memory structure is at a higher level than an upper surface of the first vertical dummy structure, and a lowermost dummy upper horizontal layer at a higher level than the first vertical dummy structure overlaps the first vertical dummy structure.
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公开(公告)号：US20220216368A1
公开(公告)日：2022-07-07
申请号：US17527366
申请日：2021-11-16
Inventor： Kyungwook HWANG , Ho Won JANG , Junsik HWANG , Jehong OH , Jungel RYU , Seungmin LEE
Abstract: Provided are a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a substrate, a membrane bridge that defines, with the substrate, a plurality of cavities, and a nitride semiconductor layer arranged on the membrane bridge. The membrane bridge and the substrate have the same crystal structure. The membrane bridge has an upper surface with a constant height with respect to a surface of the substrate.
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公开(公告)号：US20230125995A1
公开(公告)日：2023-04-27
申请号：US17968058
申请日：2022-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Junhyoung KIM , Seungmin LEE , Sangbeom HAN , Joonsung LIM
IPC: H01L27/11573 , H01L27/11519 , H01L23/528 , H01L27/11524 , H01L27/11526 , H01L27/11551 , H01L27/11565 , H01L27/1157 , H01L27/11578
Abstract: A semiconductor device includes a stack structure including a gate stack region and dummy stack region. The gate stack region includes interlayer insulating layers and gate electrodes alternately stacked. The dummy stack region includes dummy insulating layers and dummy horizontal layers alternately stacked. A separation structure penetrates the stack structure. A vertical memory structure penetrates the gate stack region in a first region. A plurality of gate contact structures electrically connect to the gate electrodes in a second region. The gate electrodes include a first gate electrode and a second gate electrode disposed on a level higher than the first gate electrode. Each of the gate contact structures includes a gate contact plug and a first insulating spacer. The gate contact plugs include a first gate contact plug penetrating the second gate electrode and contacting the first gate electrode, and a second gate contact plug contacting the second gate electrode.
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20.发明申请公开(公告)号：US20220416123A1
公开(公告)日：2022-12-29
申请号：US17897821
申请日：2022-08-29
Inventor： Kyungwook HWANG , Sungjin KANG , Euijoon YOON , Junsik HWANG , Jongmyeong KIM , Jehong OH , Jungel RYU , Seungmin LEE
Abstract: Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.
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