公开(公告)号：US12051754B2

公开(公告)日：2024-07-30

申请号：US17862909

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sujin Jung ,  Junbeom Park ,  Kihwan Kim ,  Sunguk Jang ,  Youngdae Cho

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02645 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/78618

Abstract: A semiconductor device, including a silicon on insulator (SOI) substrate is disclosed. The device may include gate structures formed on the SOI substrate and being spaced apart from each other in a horizontal direction, and a plurality of channels spaced apart from each other in a vertical direction. Each of the channels may extend through each of the gate structures in the horizontal direction. The device may include a seed layer and a source/drain region. The source/drain region may be connected to the channels, and each sidewall of the source/drain region in the horizontal direction may have a concave-convex shape. The device may include a protruding portion of the source/drain region formed between the gate structures that protrudes in the horizontal direction compared to a non-protruding portion of the source/drain region formed between the channels.

公开(公告)号：US20220059654A1

公开(公告)日：2022-02-24

申请号：US17207690

申请日：2021-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinbum Kim ,  Seokhoon Kim ,  Kwanheum Lee ,  Choeun Lee ,  Sujin Jung

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/167 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes a channel, a first source/drain structure on a first side surface of the channel, a second source/drain structure on a second side surface of the channel, a gate structure surrounding the channel, an inner spacer layer on a side surface of the gate structure, and an outer spacer layer on an outer surface of the inner spacer layer. The first source/drain structure includes a first source/drain layer on the channel and a second source/drain layer on the first source/drain layer, and on a plane of the semiconductor device that passes through the channel, at least one of a first boundary line of the first source/drain layer in contact with the second source/drain layer and a second boundary line of the first source/drain layer in contact with the channel may be convex, extending toward the channel.

公开(公告)号：US20200219976A1

公开(公告)日：2020-07-09

申请号：US16666958

申请日：2019-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Hwan KIM ,  Sunguk Jang ,  Pankwi Park ,  Sangmoon Lee ,  Sujin Jung

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device including an active fin that protrudes from a substrate and forms a plurality of recess regions spaced apart from each other, a gate pattern between the plurality of recess regions that covers a lateral surface and a top surface of the active fin, a plurality of source/drain patterns in the plurality of recess regions, and a diffusion reduction region adjacent to each of a plurality of bottoms of the plurality of recess regions and each of a plurality of sidewalls of the plurality of recess regions, the diffusion reduction region including a dopant having a lower diffusion coefficient than phosphorus (P).

公开(公告)号：US10681439B2

公开(公告)日：2020-06-09

申请号：US16535569

申请日：2019-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Kim ,  Sujin Jung ,  Youngjin Cho ,  Sungjin Park ,  Hyunmin Oh ,  Iksu Jung

IPC: H04R1/02 ,  H05K7/20 ,  H04R1/04 ,  H04R3/12 ,  H04R1/24 ,  H04R1/40

Abstract: An electronic device is provided. The electronic device includes a housing including a first plate and at least one first opening; and a speaker structure spaced apart from the first plate and disposed in the housing, wherein the speaker structure includes a first structure which faces in a first direction, opposes the first plate, and forms a space connecting to the at least one first opening along with the first plate; a second opening formed by penetrating through a part of the first structure; at least one component disposed in the speaker structure and emitting heat; a thermal conducting member including a first portion disposed in the speaker structure and being in contact with the at least one component, and a second portion disposed in the second opening; and at least one speaker disposed in a direction different from the first direction.

公开(公告)号：US10319859B2

公开(公告)日：2019-06-11

申请号：US15844863

申请日：2017-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sujin Jung ,  JinBum Kim ,  Kang Hun Moon ,  Kwan Heum Lee ,  Byeongchan Lee ,  Choeun Lee ,  Yang Xu

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device is disclosed. The device includes a substrate including an active region defined by a device isolation layer, a fin pattern protruding from the substrate and extending in a first direction, the fin pattern including a gate fin region and a source/drain fin region, a gate pattern disposed on the gate fin region to extend in a second direction crossing the first direction, and a source/drain portion provided on a sidewall of the source/drain fin region. When measured in the second direction, a width of the source/drain fin region is different from a width in the second direction of the gate fin region.

公开(公告)号：US12132119B2

公开(公告)日：2024-10-29

申请号：US17489181

申请日：2021-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kihwan Kim ,  Sunguk Jang ,  Sujin Jung ,  Youngdae Cho

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/06 ,  H01L29/161 ,  H01L29/167 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L29/0665 ,  H01L29/167 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/78618

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, a plurality of channel layers vertically spaced apart from each other on the active region and including a semiconductor material, a gate structure extending in a second direction on the substrate, and a source/drain region disposed on the active region on at least one side of the gate structure. The gate structure intersects the active region and the plurality of channel layers, and surrounds the plurality of channel layers. The source/drain region contacts the plurality of channel layers and includes first impurities. In at least a portion of the plurality of channel layers, a lower region adjacent to the active region includes the first impurities and second impurities at a first concentration, and an upper region includes the first impurities and the second impurities at a second concentration lower than the first concentration.

公开(公告)号：US12051722B2

公开(公告)日：2024-07-30

申请号：US18205671

申请日：2023-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Jung ,  Kihwan Kim ,  Sunguk Jang ,  Youngdae Cho

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/1037 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/42392 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device including: an active pattern on a substrate, the active pattern including a recess, the recess having a “V” shape; a growth prevention pattern on the recess; gate structures on portions of the active pattern at opposite sides of the recess; channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the channels extending through one of the gate structures; and a source/drain layer on the growth prevention pattern, the source/drain layer contacting the channels.

公开(公告)号：US12028590B2

公开(公告)日：2024-07-02

申请号：US17534958

申请日：2021-11-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Kim ,  Sujin Jung ,  Seungkwon Choi ,  Kyoungjong Kim

IPC: H04N23/51 ,  H04N23/55 ,  H04N23/57

CPC classification number: H04N23/51 ,  H04N23/55 ,  H04N23/57

Abstract: An electronic device is provided. The electronic device includes a housing including a support member and a rear plate, a camera support member disposed between the support member and the rear plate, a camera module disposed on the support member, a camera window covering at least a part of the camera module, and a compression member disposed between the camera window and the camera module. The camera module may include a first area facing the camera support member, a second area facing the compression member, and a third area facing the camera window and at least partially surrounded by the compression member.

公开(公告)号：US11670680B2

公开(公告)日：2023-06-06

申请号：US17559347

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sujin Jung ,  Kihwan Kim ,  Sunguk Jang ,  Youngdae Cho

IPC: H01L29/10 ,  H01L29/16 ,  H01L29/06 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/1037 ,  H01L29/0653 ,  H01L29/0665 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/42392 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device including: an active pattern on a substrate, the active pattern including a recess, the recess having a “V” shape; a growth prevention pattern on the recess; gate structures on portions of the active pattern at opposite sides of the recess; channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the channels extending through one of the gate structures; and a source/drain layer on the growth prevention pattern, the source/drain layer contacting the channels.

公开(公告)号：US11622184B2

公开(公告)日：2023-04-04

申请号：US17250590

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Kim ,  Sujin Jung ,  Hakrae Kang ,  Heejun Park ,  Minseok Shin ,  Changhwan Lee

IPC: H04R1/04 ,  H05K5/00

Abstract: According to an embodiment of the present invention, an electronic device may comprise: a housing; a printed circuit board disposed inside the housing, the printed circuit board comprising a first surface, a second surface facing away from the first surface, and a first through-hole and a second through-hole penetrating the first surface and the second surface; a first microphone disposed on the second surface so as to at least partially overlap the first through-hole when seen from above the first surface; a second microphone disposed on the second surface so as to at least partially overlap the second through-hole when seen from above the first surface; a support member disposed on the first surface, the support member comprising a third surface facing the first surface, a fourth surface facing away from the third surface, a third through-hole at least partially overlapping the first through-hole when seen from above the first surface, and a fourth through-hole at least partially overlapping the second through-hole when seen from above the first surface; a first sound-transmitting member disposed on the fourth surface so as to at least partially overlap the third through-hole; and a second sound-transmitting member disposed on the fourth surface so as to at least partially overlap the fourth through-hole. Various other embodiments may be included.