Abstract:
An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C═C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.
Abstract:
A quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the PEDOT:PSS, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. An electronic device that includes the quantum dot device.
Abstract:
A semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, a composite including the semiconductor nanoparticle, a color conversion panel, and a display panel. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and is configured to emit blue light, and exhibits a quantum yield of greater than or equal to about 40% and a full width at half maximum of less than 70 nm.
Abstract:
An electroluminescent device includes a quantum dot layer disposed between a first electrode and a second electrode, and an electron transport layer disposed between the quantum dot layer and the second electrode; wherein the quantum dot layer is configured to emit a first light, the quantum dot layer including first quantum dots, wherein the first quantum dots include a first semiconductor nanocrystal, wherein the electron transport layer includes zinc oxide nanoparticles, wherein the electroluminescent device further comprises a first layer between the quantum dot layer and the electron transport layer, the first layer including inorganic nanoparticles, wherein the inorganic nanoparticles has a different composition from the zinc oxide nanoparticles and the first quantum dots, and wherein the inorganic nanoparticles comprises a metal chalcogenide having a bandgap energy of greater than or equal to about 2.9 electron volts (eV) and less than or equal to about 10 eV.
Abstract:
An electroluminescent device including a first electrode; a second electrode; and a light emitting layer disposed between the first electrode and the second electrode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles and does not include cadmium, wherein the light emitting layer further includes a chemical species including a cyanide group including a cyano group, a cyanide anion, or a combination thereof, and wherein the chemical species includes a bond between a metal and the cyanide group.
Abstract:
A semiconductor device includes a substrate with a first active region; first and second active patterns extending in a first direction and spaced apart in a second direction, and each having a source pattern, a channel pattern, and a drain pattern that are sequentially stacked; first and second gate electrodes that surround the channel patterns of the first and second active patterns and extend in the first direction; an interlayer dielectric layer that covers the first and second active patterns and the first and second gate electrodes; a first active contact that penetrates the interlayer dielectric layer and is coupled to the first active region between the first and second active patterns; and a first power rail on the interlayer dielectric layer and electrically connected to the first active contact, each of the first and second active patterns including an overlapping region that vertically overlaps the first power rail.
Abstract:
An electronic device comprises a communication module, a display, a processor, and a memory, wherein the memory can control the communication module such that the processor performs a communication connection for screen sharing with an external electronic device, can acquire display information of the external electronic device from the external electronic device, can generate one or more pieces of transmission screen information on the basis of at least the display information of the electronic device or the display information of the external electronic device, and can determine the resolution or the screen ratio of the transmission screen information on the basis of at least the screen ratio of the external electronic device.
Abstract:
A method of controlling a voice input of a terminal supporting a voice recognition function is provided. The method includes controlling a microphone to be in a turn-off state during operation of a voice recognition mode; detecting a first user input for requesting turn-on of the microphone based on at least one of a touch input, a touch pen input, and a key input; controlling the microphone in the turn-off state to be in a turn-on state when the first user input is detected; collecting voice input data of a user through the microphone in the turn-on state; and controlling the microphone in the turn-on state to be in the turn-off state when a second user input for requesting the turn-off of the microphone is detected, and terminating collecting the voice input data.
Abstract:
An integrated circuit includes: a backside wiring layer on a back side of a substrate, the backside wiring layer including a first backside pattern and a second backside pattern isolated from each other; and a power gating switch on a front side of the substrate, the power gating switch connected to the first and second backside patterns. The power gating switch includes: a first source/drain region connected to the first backside pattern, and configured to receive a first supply voltage from the first backside pattern; a gate line structure configured to receive a power gating signal; and a second source/drain region connected to the second backside pattern, and configured to receive a power signal from the first source/drain region based on the power gating signal.
Abstract:
A clothing dryer is provided. The clothing dryer includes a water tray provided to store residual water including condensate generated by drying of laundry, a drain pump provided to pump the residual water in the water tray to an outside, a sensor provided to detect a residual water amount of the condensate stored in the water tray, memory storing one or more computer programs, and one or more processors communicatively coupled to the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the clothing dryer to control a drain processing speed of the drain pump, and control the drain pump so that the drain processing speed is slower when the residual water amount of the condensate is smaller than a first threshold level than when the residual water amount of the condensate is larger than or equal to the first threshold level, based on residual water data provided by the sensor, wherein the drain processing speed is determined by at least one of a rotational speed of the drain pump or a driving time of the drain pump.