公开(公告)号：US20190245072A1

公开(公告)日：2019-08-08

申请号：US16387874

申请日：2019-04-18

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Chun-Li LIU ,  Ali SALIH

IPC: H01L29/778 ,  H01L23/58 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L23/495 ,  H01L29/40 ,  H01L29/20 ,  H01L29/417 ,  H01L29/16

CPC classification number: H01L29/778 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/585 ,  H01L27/0883 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42316

Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

公开(公告)号：US20180240900A1

公开(公告)日：2018-08-23

申请号：US15955555

申请日：2018-04-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Chun-Li LIU ,  Ali SALIH

IPC: H01L29/778 ,  H01L23/495 ,  H01L29/20 ,  H01L29/417 ,  H01L29/06 ,  H01L29/40 ,  H01L27/088 ,  H01L29/16

CPC classification number: H01L29/778 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/585 ,  H01L27/0883 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42316

Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

公开(公告)号：US20180138306A1

公开(公告)日：2018-05-17

申请号：US15807237

申请日：2017-11-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Ali SALIH ,  Llewellyn Vaughan-Edmunds

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08

Abstract: High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.

公开(公告)号：US20180019332A1

公开(公告)日：2018-01-18

申请号：US15208466

申请日：2016-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Chun-Li LIU ,  Ali SALIH

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/16 ,  H01L23/495 ,  H01L29/06 ,  H01L27/088 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/585 ,  H01L27/0883 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/42316

Abstract: Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.

公开(公告)号：US20170309617A1

公开(公告)日：2017-10-26

申请号：US15648264

申请日：2017-07-12

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji PADMANABHAN ,  Prasad VENKATRAMAN ,  Zia HOSSAIN ,  Chun-Li LIU ,  Woochul JEON ,  Jason MCDONALD

IPC: H01L27/06 ,  H01L21/8258 ,  H01L23/367 ,  H01L27/02 ,  H01L29/417 ,  H01L21/74 ,  H01L29/10 ,  H01L29/778 ,  H01L29/872 ,  H01L23/48 ,  H01L29/20 ,  H01L29/861

CPC classification number: H01L27/0629 ,  H01L21/743 ,  H01L21/8258 ,  H01L23/3677 ,  H01L23/481 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0688 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is configured as a two terminal device.

公开(公告)号：US20220037485A1

公开(公告)日：2022-02-03

申请号：US16948788

申请日：2020-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/66

Abstract: Semiconductor devices, such as a lateral HEMT, may display current flow between a plurality of interdigitated source fingers and drain fingers, and controlled by a common gate connection. An extended source finger contact may enable improved voltage control across the source fingers, even for large devices with many and/or lengthy source fingers. In this way, unwanted subthreshold operations and switching oscillations may be avoided by reliably maintaining a source voltage at a desired level, to thereby provide fast and reliable switching.

公开(公告)号：US20180197851A1

公开(公告)日：2018-07-12

申请号：US15911999

申请日：2018-03-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Ali SALIH

IPC: H01L27/06 ,  H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H01L29/40 ,  H01L49/02 ,  H01L23/528 ,  H01L27/088

CPC classification number: H01L29/7787 ,  H01L27/0883 ,  H01L28/40 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/7786

Abstract: In an aspect, a cascode circuit can include a high-side transistor and a low-side transistor. The source of the high-side transistor can be coupled to the drain of the low-side transistor; and the gate of the high-side transistor can be coupled to each of the source and the gate of the low-side transistor. In another aspect, an electronic device can include a high-side transistor, a low-side transistor, and a field electrode. The low-side transistor can include a drain region coupled to the source electrode of the high-side transistor. The field electrode can overlie and be capacitively coupled to a channel layer of the high-side transistor, wherein the field electrode is configured to be at a voltage between the voltages of the high-side and low-side power supply terminals.

公开(公告)号：US20180026123A1

公开(公告)日：2018-01-25

申请号：US15214579

申请日：2016-07-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Woochul JEON ,  Chun-Li LIU

IPC: H01L29/778 ,  H01L29/417 ,  H01L23/535 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L23/4824 ,  H01L23/535 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/7786

Abstract: Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.

公开(公告)号：US20170025405A1

公开(公告)日：2017-01-26

申请号：US14808627

申请日：2015-07-24

Applicant: Semiconductor Components Industries, LLC

Inventor： Woochul JEON ,  Joe FULTON ,  Chun-Li LIU

IPC: H01L27/06 ,  H01L29/778

CPC classification number: H01L27/0629 ,  H01L29/778 ,  H03K17/6871 ,  H03K2017/6875 ,  H03K2217/0036

Abstract: A circuit can include a transistor coupled to a resistor or a diode. In an embodiment, the circuit can include a pair of transistors arranged in a cascode configuration, and each of the transistors can have a corresponding component connected in parallel. In a particular embodiment, the components can be resistors, and in another particular, embodiment, the components can be diodes. The circuit can have less on-state resistance as compared to a circuit in which only one of the components is used, and reduces the off-state voltage on the gate of a high-side transistor. An integrated circuit can include a high electron mobility transistor structure and a resistor, a diode, a pair of resistors, or a pair of diodes.

Abstract translation: 电路可以包括耦合到电阻器或二极管的晶体管。 在一个实施例中，电路可以包括以共源共极配置布置的一对晶体管，并且每个晶体管可以具有并联连接的相应部件。 在特定实施例中，组件可以是电阻器，并且在另一特定实施例中，组件可以是二极管。 与仅使用一个部件的电路相比，该电路可以具有较小的导通电阻，并且降低高侧晶体管的栅极上的截止电压。 集成电路可以包括高电子迁移率晶体管结构和电阻器，二极管，一对电阻器或一对二极管。

公开(公告)号：US20160336313A1

公开(公告)日：2016-11-17

申请号：US14713777

申请日：2015-05-15

Applicant: Semiconductor Components Industries, LLC

Inventor： Woochul JEON ,  Chun-Li LIU

IPC: H01L27/07 ,  H01L29/20 ,  H01L29/423 ,  H01L29/78 ,  H01L29/778 ,  H01L29/861

CPC classification number: H01L29/861 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786

Abstract: An integrated circuit can include a pair of transistors connected in a cascode configuration. In an embodiment, an anode of a diode can be disposed between the gate electrodes of the transistors. In another embodiment, the transistors can include the transistors and a diode, wherein the anode of the diode is coupled to a current electrode of a transistor; and the cathode is coupled to a current electrode of the other transistor. In a particular embodiment, one of the transistors can be an enhancement mode transistor, and the other transistor can be a depletion mode, high mobility electron transistor.

Abstract translation: 集成电路可以包括以共源共享结构连接的一对晶体管。 在一个实施例中，二极管的阳极可以设置在晶体管的栅电极之间。 在另一个实施例中，晶体管可以包括晶体管和二极管，其中二极管的阳极耦合到晶体管的电流电极; 并且阴极耦合到另一晶体管的电流电极。 在特定实施例中，晶体管之一可以是增强型晶体管，而另一晶体管可以是耗尽型，高迁移率电子晶体管。