公开(公告)号：US20240079479A1

公开(公告)日：2024-03-07

申请号：US18388883

申请日：2023-11-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/022 ,  H01L21/02263 ,  H01L27/1225 ,  H01L29/513 ,  H01L29/78609 ,  H01L29/7869

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20210020785A1

公开(公告)日：2021-01-21

申请号：US17063748

申请日：2020-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  H01L21/465 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20200287026A1

公开(公告)日：2020-09-10

申请号：US16878758

申请日：2020-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786 ,  H01L27/12

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20180053856A1

公开(公告)日：2018-02-22

申请号：US15785562

申请日：2017-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  H01L29/10 ,  H01L21/465 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H01L29/06 ,  H01L29/24 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/04 ,  H01L21/306

CPC classification number: H01L29/78696 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20160197200A1

公开(公告)日：2016-07-07

申请号：US15071723

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime TOKUNAGA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/22 ,  H01L29/247 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device having stable electrical characteristics is provided. Oxide films each containing one or more kinds of metal elements included in an oxide semiconductor film are formed in contact with an upper side and a lower side of the oxide semiconductor film where a channel is formed, whereby interface states are not easily generated at an upper interface and a lower interface of the oxide semiconductor film. A material which has a lower electron affinity than the oxide semiconductor film is used for the oxide films in contact with the oxide semiconductor film, whereby electrons flowing in the channel hardly move in the oxide films and mainly move in the oxide semiconductor film. Thus, even when an interface state exists between the oxide film and an insulating film formed on the outside of the oxide film, the state hardly influences the movement of electrons.

Abstract translation: 提供了具有稳定的电气特性的高度可靠的半导体器件。 与包含在氧化物半导体膜中的一种或多种金属元素的氧化物膜形成为与形成沟道的氧化物半导体膜的上侧和下侧接触，由此在上部不容易产生界面状态 界面和氧化物半导体膜的下界面。 与氧化物半导体膜接触的氧化物膜使用具有比氧化物半导体膜更低的电子亲和力的材料，由此在沟道中流动的电子在氧化膜中几乎不会移动，并且主要在氧化物半导体膜中移动。 因此，即使在氧化物膜和形成在氧化物膜的外部的绝缘膜之间存在界面状态的情况下，该状态几乎不影响电子的移动。

公开(公告)号：US20140138674A1

公开(公告)日：2014-05-22

申请号：US14073993

申请日：2013-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract translation: 晶体管包括层叠有氧化物半导体膜和氧化膜的多层膜，栅极电极和栅极绝缘膜。 多层膜与栅电极重叠，栅极绝缘膜插入其间。 多层膜具有在氧化物半导体膜的底面和氧化物半导体膜的侧面之间具有第一角度的形状，以及氧化物膜的底面与氧化膜的侧面之间的第二角度。 第一个角度是锐角并小于第二个角度。 此外，制造包括这种晶体管的半导体器件。

公开(公告)号：US20210234025A1

公开(公告)日：2021-07-29

申请号：US17227450

申请日：2021-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786 ,  H01L27/12

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20190341502A1

公开(公告)日：2019-11-07

申请号：US16515283

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  H01L29/10 ,  H01L21/465 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H01L29/06 ,  H01L29/24 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/04 ,  H01L21/306

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20170110588A1

公开(公告)日：2017-04-20

申请号：US15389846

申请日：2016-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA ,  Toshinari SASAKI ,  Keisuke MURAYAMA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L21/02109 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

公开(公告)号：US20170033229A1

公开(公告)日：2017-02-02

申请号：US15290442

申请日：2016-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Hajime TOKUNAGA

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78696

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.

Abstract translation: 通过防止其电特性的改变来提供包括氧化物半导体的高度可靠的半导体器件。 提供一种半导体器件，其包括与源电极层和漏电极层接触的第一氧化物半导体层和用作晶体管的主电流路径（沟道）的第二氧化物半导体层。 第一氧化物半导体层用作用于防止源电极层和漏极电极层的构成元素扩散到沟道中的缓冲层。 通过设置第一氧化物半导体层，可以防止构成元素扩散到第一氧化物半导体层和第二氧化物半导体层之间的界面中并进入第二氧化物半导体层。