公开(公告)号：US11791350B2

公开(公告)日：2023-10-17

申请号：US17701961

申请日：2022-03-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Satoru Idojiri ,  Kenichi Okazaki ,  Hiroki Adachi ,  Daisuke Kubota

IPC: H01L51/52 ,  H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2221/68386 ,  H10K59/1213

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US11726376B2

公开(公告)日：2023-08-15

申请号：US16461994

申请日：2017-11-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yukinori Shima ,  Kenichi Okazaki ,  Natsuko Takase

IPC: G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1345 ,  G02F1/1333

CPC classification number: G02F1/1368 ,  G02F1/13439 ,  G02F1/136277 ,  G02F1/136286 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78648 ,  G02F1/13338 ,  G02F1/13454 ,  G02F1/13685 ,  G02F1/133388 ,  G02F1/136295 ,  G02F2202/103 ,  G02F2202/104

Abstract: A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided.
The display device includes a display portion and a driver circuit portion. The display portion includes a liquid crystal element, a first transistor, a scan line, and a signal line. The driver circuit portion includes a second transistor. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. Each of the scan line and the signal line is electrically connected to the first transistor. The scan line and the signal line each include a metal layer. The structure of the first transistor is different from that of the second transistor. The first transistor is electrically connected to the pixel electrode. The first transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region have a function of transmitting visible light. Visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device.

公开(公告)号：US20230132342A1

公开(公告)日：2023-04-27

申请号：US18084912

申请日：2022-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Tomonori Nakayama ,  Motoki Nakashima

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/49 ,  H01L29/417

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

公开(公告)号：US11616149B2

公开(公告)日：2023-03-28

申请号：US16768810

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Takuya Handa ,  Yasuharu Hosaka ,  Shota Sambonsuge ,  Yasumasa Yamane ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/24

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.

公开(公告)号：US11489077B2

公开(公告)日：2022-11-01

申请号：US17000580

申请日：2020-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US11380799B2

公开(公告)日：2022-07-05

申请号：US16571769

申请日：2019-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasumasa Yamane ,  Yuhei Sato ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  C23C14/08 ,  C23C14/34 ,  H01L27/12 ,  H01L21/02

Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US11352690B2

公开(公告)日：2022-06-07

申请号：US17113653

申请日：2020-12-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masashi Tsubuku

IPC: C23C14/08 ,  C30B23/00 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  C23C14/34 ,  C30B23/02 ,  C30B29/22

Abstract: A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided.
A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part.

公开(公告)号：US20210343843A1

公开(公告)日：2021-11-04

申请号：US17370221

申请日：2021-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C23C14/08 ,  C23C14/58 ,  H01L29/778 ,  H01L29/786 ,  H01L27/12 ,  C04B35/453 ,  C04B35/622

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US11158745B2

公开(公告)日：2021-10-26

申请号：US16732425

申请日：2020-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/425 ,  H01L29/49 ,  H01L27/12 ,  H01L21/473 ,  H01L21/768

Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

公开(公告)号：US10985283B2

公开(公告)日：2021-04-20

申请号：US15904867

申请日：2018-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Yasutaka Nakazawa ,  Yasuharu Hosaka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L27/02 ,  H01L27/32 ,  H01L21/02 ,  H01L27/12 ,  G06F3/044 ,  G06F3/041 ,  G02F1/1368 ,  G02F1/1333

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.