公开(公告)号：US10361318B2

公开(公告)日：2019-07-23

申请号：US15785562

申请日：2017-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66 ,  H01L21/465

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US09964800B2

公开(公告)日：2018-05-08

申请号：US15341302

申请日：2016-11-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Takayuki Cho ,  Daisuke Kubota

IPC: G02F1/1335 ,  G02F1/1337 ,  G06F3/041 ,  H01L27/32 ,  H01L51/52 ,  G06F3/044 ,  G02F1/1333

CPC classification number: G02F1/133553 ,  G02F1/13338 ,  G02F1/133514 ,  G02F1/133555 ,  G02F1/133707 ,  G02F2201/123 ,  G02F2201/44 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04103 ,  H01L27/322 ,  H01L27/3225 ,  H01L27/323 ,  H01L27/3232 ,  H01L51/5206 ,  H01L2227/323 ,  H01L2251/5307 ,  H01L2251/5361

Abstract: A novel display device that is highly convenient or reliable. The display device includes a first display element, a second display element, a color film, and a reflective electrode. The first display element includes a first pixel electrode and a liquid crystal layer. The second display element includes a second pixel electrode and a light-emitting layer. The first pixel electrode is electrically connected to the reflective electrode. The reflective electrode includes an opening through which light emitted from the light-emitting layer passes. The color film faces the reflective electrode with the liquid crystal layer placed therebetween.

公开(公告)号：US09812583B2

公开(公告)日：2017-11-07

申请号：US15187106

申请日：2016-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66 ,  H01L21/465

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US09087726B2

公开(公告)日：2015-07-21

申请号：US14073993

申请日：2013-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L21/10 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20150155362A1

公开(公告)日：2015-06-04

申请号：US14549916

申请日：2014-11-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Takahiro Sato ,  Naoya Sakamoto ,  Shunpei Yamazaki

IPC: H01L29/45 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes an oxide semiconductor; a source electrode and a drain electrode in contact with the oxide semiconductor; a gate insulating film over the oxide semiconductor, the source electrode, and the drain electrode; and a gate electrode overlapping the oxide semiconductor, part of the source electrode, and part of the drain electrode with the gate insulating film positioned therebetween. The source electrode and the drain electrode each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti), and the thickness of a region of the oxide semiconductor over which neither the source electrode nor the drain electrode is provided is smaller than the thicknesses of regions of the oxide semiconductor over which the source electrode and the drain electrode are provided.

Abstract translation: 半导体器件包括氧化物半导体; 与氧化物半导体接触的源电极和漏电极; 氧化物半导体上的栅极绝缘膜，源电极和漏电极; 以及与氧化物半导体，源电极的一部分和漏电极的一部分重叠的栅电极，栅绝缘膜位于它们之间。 源电极和漏极各自包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti），以及氧化物半导体的区域的厚度， 源极电极和漏极电极的厚度小于设置有源电极和漏电极的氧化物半导体的区域的厚度。

公开(公告)号：US08937305B2

公开(公告)日：2015-01-20

申请号：US13652686

申请日：2012-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Cho ,  Shunsuke Koshioka ,  Masatoshi Yokoyama ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.

Abstract translation: 为了提供一种高可靠性的半导体器件，其包括具有氧化物半导体的晶体管，在包括设置在玻璃基板上的具有底栅结构的交错晶体管的半导体器件中，栅极绝缘膜，其中第一栅极绝缘膜和第二栅极绝缘膜 栅极绝缘膜的组成彼此不同，按栅极电极层设置。 或者，在具有底栅结构的交错晶体管中，在玻璃基板和栅电极层之间设置保护绝缘膜。 包含在玻璃基板中的金属元素在第一栅极绝缘膜和第二栅极绝缘膜之间的界面处或者栅极电极层和栅极绝缘膜之间的界面处具有低于或等于5×1018原子/ cm3的浓度 。