公开(公告)号：US20230051739A1

公开(公告)日：2023-02-16

申请号：US17783088

申请日：2020-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI

IPC: H01L27/11524 ,  H01L29/786 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  G11C16/04

Abstract: To provide a highly reliable memory device. A first insulator is formed over a substrate; a second insulator is formed over the first insulator; a third insulator is formed over the second insulator; an opening penetrating the first insulator, the second insulator, and the third insulator is formed; a fourth insulator is formed on the inner side of a side surface of the first insulator, a side surface of the second insulator, and a side surface of the third insulator, in the opening; an oxide semiconductor is formed on the inner side of the fourth insulator; the second insulator is removed; and a conductor is formed between the first insulator and the third insulator; and the fourth insulator is formed by performing, a plurality of times, a cycle including a first step of supplying a gas containing silicon and an oxidizing gas into a chamber where the substrate is placed, a second step of stopping the supply of the gas containing silicon into the chamber; and a third step of generating plasma containing the oxidizing gas in the chamber.

公开(公告)号：US20160308060A1

公开(公告)日：2016-10-20

申请号：US15092956

申请日：2016-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Akihisa SHIMOMURA ,  Yuji EGI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract translation: 具有稳定电特性的晶体管。 半导体器件包括衬底上的第一绝缘体，第一绝缘体上的第二绝缘体，与第二绝缘体的顶表面的至少一部分接触的氧化物半导体，与第一绝缘体的至少一部分接触的第三绝缘体 所述氧化物半导体的第一导体和与所述氧化物半导体电连接的第二导体，在所述第三绝缘体上的第四绝缘体，位于所述第四绝缘体之上的第三导体，并且其中至少一部分位于所述第一导体与所述第二绝缘体之间 导体和第三导体上的第五绝缘体。 第一绝缘体包含卤素元素。

公开(公告)号：US20240038529A1

公开(公告)日：2024-02-01

申请号：US18020288

申请日：2021-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/0234

Abstract: A method for depositing a metal oxide is provided. The deposition method of a metal oxide includes a first step of introducing a first precursor into a first chamber, a second step of introducing a second precursor into the first chamber, a third step of introducing a third precursor into the first chamber, a fourth step of introducing an oxidizer in a plasma state into the first chamber after each of the first step, the second step, and the third step, and a fifth step of performing microwave treatment. Performing each of the first to fourth steps one or more times is regarded as one cycle, and the fifth step is performed in a second chamber after the one cycle is repeated a plurality of times. The first to third precursors are different kinds of precursors, the microwave treatment is performed using an oxygen gas and an argon gas, the metal oxide includes a crystal region, and a c-axis of the crystal region is substantially parallel to a normal vector of a surface where the metal oxide is formed or a normal vector of a surface of the metal oxide.

公开(公告)号：US20230397427A1

公开(公告)日：2023-12-07

申请号：US18024285

申请日：2021-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Hitoshi KUNITAKE ,  Yuji EGI ,  Fumito ISAKA

IPC: H10B51/30 ,  H10B51/40 ,  H10B53/30 ,  H10B53/40 ,  H01L29/78 ,  H10B63/10 ,  H10N50/10

CPC classification number: H10B51/30 ,  H10B51/40 ,  H10B53/30 ,  H10B53/40 ,  H01L29/78391 ,  H10B63/10 ,  H10N50/10

Abstract: A semiconductor device that has lower power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first transistor, a first FTJ element, and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element and an input terminal of the second FTJ element. In data writing, polarization is caused in each of the first FTJ element and the second FTJ element in accordance with the data. In data reading, voltage with which the polarization does not change is applied between the output terminal of the first FTJ element and the input terminal of the second FTJ element. At this time, the first transistor is turned on, whereby a differential current between current flowing through the first FTJ element and current flowing through the second FTJ element flows through the first transistor. Obtaining the differential current using a read circuit or the like enables the data written to the first FTJ element and the second FTJ element to be read.

公开(公告)号：US20230317832A1

公开(公告)日：2023-10-05

申请号：US18019924

申请日：2021-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yoichi IIKUBO ,  Yuji EGI ,  Yasuhiro JINBO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02631

Abstract: A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insulating film as water molecules, so that a hydrogen concentration in the insulating film is reduced. Note that the microwave treatment is preferably performed using an oxygen gas and an argon gas at a temperature range of higher than or equal to 200° C. and lower than or equal to 300° C., and the proportion of the flow rate of the oxygen gas to the total of the flow rate of the oxygen gas and the flow rate of the argon gas is preferably greater than 0 % and less than or equal to 50 %.

公开(公告)号：US20230274935A1

公开(公告)日：2023-08-31

申请号：US18109305

申请日：2023-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L21/8234

CPC classification number: H01L21/02565 ,  H01L21/02614 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/517 ,  H01L21/823412

Abstract: A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

公开(公告)号：US20230269949A1

公开(公告)日：2023-08-24

申请号：US18043669

申请日：2021-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Yuji EGI ,  Masahiro TAKAHASHI ,  Shuntaro KOCHI

IPC: H10B53/30 ,  H10B53/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H10B53/30 ,  H10B53/10 ,  H01L29/78696 ,  H01L29/7869 ,  H01L29/6675

Abstract: A material having favorable ferroelectricity is provided. An embodiment of the present invention is a metal oxide film including a first layer and a second layer. The first layer contains first oxygen and hafnium, and the second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other with the first oxygen positioned therebetween, and the second oxygen is bonded to the zirconium.

公开(公告)号：US20230110947A1

公开(公告)日：2023-04-13

申请号：US17904015

申请日：2021-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Yuji EGI ,  Tetsuya KAKEHATA

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/46

Abstract: A novel deposition method of a metal oxide is provided. The deposition method includes a first step of supplying a first precursor to a chamber; a second step of supplying a second precursor to the chamber; a third step of supplying a third precursor to the chamber; and a fourth step of introducing an oxidizer into the chamber after the first step, the second step, and the third step. The first to third precursors are different kinds of precursors, and a substrate placed in the chamber in the first to fourth steps is heated to a temperature higher than or equal to 300° C. and lower than or equal to decomposition temperatures of the first to third precursors.

公开(公告)号：US20170309732A1

公开(公告)日：2017-10-26

申请号：US15492253

申请日：2017-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kazutaka KURIKI ,  Yuji EGI ,  Hiromi SAWAI ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Daisuke MATSUBAYASHI

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.

公开(公告)号：US20240266222A1

公开(公告)日：2024-08-08

申请号：US18613772

申请日：2024-03-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Tetsuya KAKEHATA ,  Hiroki KOMAGATA ,  Yuji EGI

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696 ,  H01L29/66742

Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.