公开(公告)号：US20180090640A1

公开(公告)日：2018-03-29

申请号：US15563526

申请日：2016-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Seok Han ,  Woo Chul Kwak ,  Hyo Shik Choi ,  Jung Hwan Hwang ,  Chang Geun Jang

IPC: H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

Abstract: Disclosed herein is a UV light emitting device. The UV light emitting device includes a first conductive type semi-conductor layer, an anti-cracking layer disposed on the first conductive type semiconductor layer, an active layer disposed on the anti-cracking layer, and a second conductive type semiconductor layer disposed on the active layer, wherein the anti-cracking layer includes first lattice points and second lattice points disposed at an interface between the first conductive type semiconductor layer and the anti-cracking layer, the first lattice points are connected to lattices of the first conductive type semiconductor layer, and the second lattice points are not connected to the lattices of the first conductive type semiconductor layer.

公开(公告)号：US20150340562A1

公开(公告)日：2015-11-26

申请号：US14715286

申请日：2015-05-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Min Kyu Kim ,  Jung Whan Jung ,  Kyung Hae Kim ,  Woo Chul Kwak

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/06

CPC classification number: H01L33/325 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/38

Abstract: Embodiments provide a method of growing a p-type nitride semiconductor, and a light emitting device fabricated using the same. The method of growing a p-type nitride semiconductor includes growing a p-type nitride semiconductor layer on a growth substrate by introducing a group III element source, a group V element source, and a p-type dopant into a chamber at a first temperature; and cooling the interior of the chamber from the first temperature to a second temperature, wherein the p-type dopant is introduced into the chamber for at least some part of the cooling of the interior of the chamber from the first temperature to the second temperature. According to the present disclosed technology, it is possible to prevent diffusion of the p-type dopant from a p-type nitride semiconductor layer into the chamber.

Abstract translation: 实施例提供了生长p型氮化物半导体的方法和使用其制造的发光器件。 生长p型氮化物半导体的方法包括通过在第一温度下将III族元素源，V族元素源和p型掺杂剂引入到室中来生长生长衬底上的p型氮化物半导体层 ; 以及将所述室的内部从所述第一温度冷却至第二温度，其中所述p型掺杂剂被引入所述室中，用于将所述室内部的至少一部分冷却从所述第一温度升至所述第二温度。 根据本公开的技术，可以防止p型掺杂剂从p型氮化物半导体层扩散到室中。

公开(公告)号：US20150115223A1

公开(公告)日：2015-04-30

申请号：US14526427

申请日：2014-10-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Woo Chul Kwak ,  Seung Kyu Choi ,  Chae Hon Kim ,  Jung Whan Jung ,  Yong Hyun Baek ,  Sam Seok Jang ,  Su Youn Hong ,  Mi Gyeong Jeong

IPC: H01L29/20 ,  H01L29/205 ,  H01L29/15 ,  H01L29/201

CPC classification number: H01L29/2003 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/0607 ,  H01L29/155 ,  H01L29/201 ,  H01L29/205 ,  H01L33/02 ,  H01L33/025 ,  H01L33/04 ,  H01L33/20 ,  H01L33/22

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.

Abstract translation: 公开了半导体器件及其制造方法。 半导体器件包括：第一导电型半导体层，包括第一下导电型半导体层和第一上导电型半导体层; 通过所述第一上导电型半导体层的至少一部分的V凹坑; 放置在所述第一导电型半导体上并填充所述V坑的第二导电型半导体层; 以及插入在第一和第二导电类型半导体层之间的有源层，其中V坑穿过有源层。 第一上导电型半导体层具有比第一下导电型半导体层更高的缺陷密度，并且包括包含V坑的起点的V坑生成层。 半导体器件包括具有大尺寸和高密度的V型凹坑，以有效地防止由于静电放电对半导体器件的损坏。

公开(公告)号：US20150091047A1

公开(公告)日：2015-04-02

申请号：US14500836

申请日：2014-09-29

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seung Kyu Choi ,  Woo Chul Kwak ,  Chae Hon Kim ,  Jung Whan Jung ,  Sam Seok Jang

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/02

Abstract: Disclosed are a method of growing a nitride semiconductor, a method of manufacturing a template for semiconductor fabrication and a method of manufacturing a semiconductor light emitting device using the same. The method of manufacturing a semiconductor light emitting device includes: preparing a growth substrate having a defect aggregation region; growing a first nitride semiconductor layer over the growth substrate; growing a second nitride semiconductor layer over the first nitride semiconductor layer; growing a third nitride semiconductor layer over the second nitride semiconductor layer; growing an active layer over the third nitride semiconductor layer; and forming a second conductive type semiconductor layer over the active layer. Accordingly, semiconductor layers grown on the template can have excellent crystallinity.

Abstract translation: 公开了一种生长氮化物半导体的方法，制造用于半导体制造的模板的方法以及使用其制造半导体发光器件的方法。 制造半导体发光器件的方法包括：制备具有缺陷聚集区域的生长衬底; 在生长衬底上生长第一氮化物半导体层; 在所述第一氮化物半导体层上生长第二氮化物半导体层; 在所述第二氮化物半导体层上生长第三氮化物半导体层; 在第三氮化物半导体层上生长活性层; 以及在所述有源层上形成第二导电类型半导体层。 因此，在模板上生长的半导体层可以具有优异的结晶度。