公开(公告)号：US20160322241A1

公开(公告)日：2016-11-03

申请号：US15141946

申请日：2016-04-29

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Jun MATSUSHITA ,  Takashi MIYAMOTO ,  Konosuke HAYASHI ,  Osamu YAMAZAKI

IPC: H01L21/67 ,  F26B3/30 ,  H01L21/687

CPC classification number: F26B3/30 ,  F26B5/08 ,  H01L21/67115

Abstract: The substrate processing unit 1 comprises the rotating table 31 configured to hold substrate W, the processing chamber 37 which accommodates the rotating table 31, a lamp 61 is provided above the processing chamber 37 and configured to heat the surface of substrate W, the lamp chamber 60 which accommodates that lamp 61, a transmission window 62 disposed below the lamp chamber 60, and a plurality of nozzle 64 which supply cooling fluid G to the transmission window 62. Then the substrate processing unit 1 can suppress generating of a water mark or pattern collapse, and can perform good substrate processing.

Abstract translation: 基板处理单元1包括被配置为保持基板W的旋转台31，容纳旋转台31的处理室37，在处理室37的上方设置有灯61，其构造为加热基板W的表面，灯室 60，其容纳该灯61，设置在灯室60下方的透射窗62以及将冷却流体G供给到透射窗62的多个喷嘴64.然后，基板处理单元1可以抑制水印或图案的产生 崩溃，并可以执行良好的基板处理。

公开(公告)号：US20160093486A1

公开(公告)日：2016-03-31

申请号：US14867458

申请日：2015-09-28

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kunihiro MIYAZAKI ,  Kenji MINAMI ,  Yuji NAGASHIMA ,  Konosuke HAYASHI

IPC: H01L21/02 ,  B08B3/08

CPC classification number: H01L21/6708 ,  G03F7/423 ,  H01L21/31133

Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

Abstract translation: 根据一个实施例，基板处理装置包括第一液体供应器，第二液体供应器和控制器。 第一液体供应器向基材供应具有等于或高于过氧化氢水沸点的第一温度的硫酸溶液。 第二液体供应器用第二温度低于第一温度的硫酸溶液和过氧化氢水的混合物供应待处理的表面。 控制器控制第一液体供应商供应硫酸溶液，以将基底加热至过氧化氢水的沸点或更高。 当基板的温度变得等于或高于第二温度时，控制器控制第一液体供应商停止供应硫酸溶液并控制第二液体供应器供应混合物。

公开(公告)号：US20160071746A1

公开(公告)日：2016-03-10

申请号：US14781077

申请日：2014-03-25

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI

IPC: H01L21/67 ,  B08B3/10 ,  H01L21/306 ,  H01L21/02 ,  H01L21/687 ,  H01L21/66

CPC classification number: H01L21/67051 ,  B08B3/10 ,  H01L21/02057 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/68714 ,  H01L22/12

Abstract: According to one embodiment, a substrate processing apparatus (1) includes: a support (4) configured to support a substrate (W) in a plane; a rotation mechanism (5) configured to rotate the support (4) about an axis that crosses a surface of the substrate (W) supported by the support (4) as a rotation axis; a plurality of nozzles (6a, 6b, 6c), which are aligned from the center toward the periphery of the substrate (W) supported by the support (4), configured to eject a treatment liquid to the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5), and a controller (9) configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5).

Abstract translation: 根据一个实施例，一种基板处理装置（1）包括：支撑件（4），其构造成在平面中支撑基板（W）; 旋转机构（5），其构造成使所述支撑件（4）围绕由所述支撑件（4）支撑的所述基板（W）的表面作为旋转轴线交叉的轴线旋转; 从由支撑体（4）支撑的基板（W）的中心朝向周缘排列的多个喷嘴（6a，6b，6c）构造成将处理液喷射到基板（W）的表面， 在所述支撑件（4）上通过所述旋转机构（5）旋转的控制器（9），以及控制器（9），其被配置为根据形成在所述旋转机构（5）上的处理液的膜的厚度来控制所述喷嘴以不同的喷射正时喷射所述处理液 支撑体（4）上的基板（W）的表面由旋转机构（5）旋转。

公开(公告)号：US20160025409A1

公开(公告)日：2016-01-28

申请号：US14773055

申请日：2014-02-28

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kunihiro MIYAZAKI ,  Konosuke HAYASHI ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA

IPC: F26B3/30 ,  F26B7/00 ,  F26B11/18 ,  F26B5/00

CPC classification number: F26B3/30 ,  F26B3/28 ,  F26B5/005 ,  F26B7/00 ,  F26B11/18 ,  H01L21/02057 ,  H01L21/67034 ,  H01L21/67115

Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.

Abstract translation: 根据一个实施例，一种基板处理装置（1）包括：配置成支撑基板W的台（4），配置成将挥发性溶剂供应到工作台（4）上的基板W的表面的溶剂供应单元（8） ）和被配置为向已经供给了挥发性溶剂的基板W发光的照射器（10），并且用作加热基板W的加热器，使得在基板W的表面上形成气体层 使挥发性溶剂成为液体球。 因此，可以成功地干燥基板以及抑制图案塌陷。

公开(公告)号：US20150090296A1

公开(公告)日：2015-04-02

申请号：US14495118

申请日：2014-09-24

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuji NAGASHIMA ,  Jun MATSUSHITA ,  Konosuke HAYASHI ,  Kunihiro MIYAZAKI ,  Masaaki FURUYA ,  Hidehito AZUMANO ,  Toyoyasu TAUCHI

IPC: B08B3/10

CPC classification number: B08B3/10 ,  H01L21/67028

Abstract: A substrate processing device 100 includes a solvent replacing unit (organic solvent supply unit 15 and solvent supply unit 34) replacing a cleaning liquid with a volatile solvent of a low concentration, and thereafter further performing replacement with a volatile solvent of a high concentration.

Abstract translation: 基板处理装置100包括用低浓度的挥发性溶剂代替清洗液的溶剂置换单元（有机溶剂供给单元15和溶剂供给单元34），然后进一步用高浓度的挥发性溶剂进行置换。

公开(公告)号：US20140261554A1

公开(公告)日：2014-09-18

申请号：US14212382

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Masaaki FURUYA ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA ,  Atsushi KINASE ,  Masahiro ABE

IPC: H01L21/67

CPC classification number: H01L21/6704 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67115

Abstract: In a substrate processing device 10 having a heating and drying unit 103 for drying a surface of a substrate W, the heating and drying unit 103 heats upward a vertically downward surface of the substrate W to dry the surface of the substrate by dropping and removing, by gravity, the droplets of the volatile solvent formed on the surface of the substrate W by the heating operation.

Abstract translation: 在具有用于干燥基板W的表面的加热和干燥单元103的基板处理装置10中，加热和干燥单元103向上加热基板W的垂直向下的表面，以通过掉落和去除来干燥基板的表面， 通过重力，通过加热操作形成在基板W的表面上的挥发性溶剂的液滴。

公开(公告)号：US20140261549A1

公开(公告)日：2014-09-18

申请号：US14212218

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke HAYASHI ,  Masaaki FURUYA ,  Takashi OOTAGAKI ,  Yuji NAGASHIMA ,  Atsushi KINASE ,  Masahiro ABE

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6776

Abstract: A substrate processing device 100 includes a cleaning liquid supply unit 114 supplying a cleaning liquid to a surface of a substrate W, a solvent supply unit 115 supplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unit 117 heating the substrate W supplied with the volatile solvent, and a drying unit 118 drying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit 117, and the heating unit 117 and the drying unit 118 are arranged in a course of transportation of the substrate W transported from the solvent supply unit 115.

Abstract translation: 基板处理装置100包括向基板W的表面供给清洗液的清洗液供给部114，向供给清洗液的基板W的表面供给挥发性溶剂的溶剂供给部115，以更换清洗液 在具有挥发性溶剂的基板W的表面上，加热单元117，加热供给挥发性溶剂的基板W，以及干燥单元118，通过除去表面上产生的挥发性溶剂的液滴来干燥基板W的表面 通过加热单元117的加热操作，加热单元117和干燥单元118在从溶剂供应单元115输送的基板W的输送过程中布置。