公开(公告)号：US09834863B2

公开(公告)日：2017-12-05

申请号：US14598982

申请日：2015-01-16

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts

IPC分类号： C30B29/40 ,  C30B7/10

CPC分类号： C30B29/403 ,  C30B7/105

摘要： Bulk crystal of group III nitride having thickness greater than 1 mm with improved crystal quality, reduced lattice bowing and/or reduced crack density and methods of making. Bulk crystal has a seed crystal, a first crystalline portion grown on the first side of the seed crystal and a second crystalline portion grown on the second side of the seed crystal. Either or both crystalline portions have an electron concentration and/or an oxygen concentration similar to the seed crystal.The bulk crystal can have an additional seed crystal, with common faces (e.g. same polarity, same crystal plane) of seed crystals joined so that a first crystalline part grows on the first face of the first seed crystal and a second crystalline part grows on the first face of the second seed crystal. Each crystalline part's electron concentration and/or oxygen concentration may be similar to its corresponding seed crystal.

公开(公告)号：US20140087113A1

公开(公告)日：2014-03-27

申请号：US13834015

申请日：2013-03-15

申请人： Seoul Semiconductor Co., Ltd. ,  SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L29/20 ,  C30B29/40 ,  C30B7/10

CPC分类号： C30B29/406 ,  B28D5/045 ,  C30B7/10 ,  C30B7/105 ,  C30B25/20 ,  C30B29/403 ,  C30B29/64 ,  C30B33/06 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02628 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/32 ,  Y10S117/902 ,  Y10T428/192

摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

摘要翻译： 本发明提供一种生长III族氮化物锭的方法。 III族氮化物晶体如GaN通过氨热法在种子的两侧生长以形成锭，并将晶锭切成晶片。 将包括第一代种子的晶片切成比其他晶片厚，使得包括第一代种子的晶片不破裂。 包括第一代晶种的晶片可以用作下一个氨热生长的种子。

公开(公告)号：US20140061662A1

公开(公告)日：2014-03-06

申请号：US13834871

申请日：2013-03-15

申请人： Seoul Semiconductor Co., Ltd. ,  SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L29/201 ,  H01L29/20

CPC分类号： H01L29/201 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003

摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

摘要翻译： 本发明公开了一种III族氮化物晶片，例如GaN，AlN，InN及其合金，其一面在视觉上与其他表面不同。 在用诸如多线锯的机械方法从III族氮化物的块状晶体切片晶片之后，晶片被化学蚀刻，使得晶片的一个表面在视觉上与另一表面区分开。 本发明还公开了一种制造这种晶片的方法。

公开(公告)号：US20160215410A1

公开(公告)日：2016-07-28

申请号：US15004464

申请日：2016-01-22

申请人： SixPoint Materials, Inc. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts ,  Daryl Key

IPC分类号： C30B7/10 ,  G01N23/207 ,  C30B29/40

CPC分类号： C30B7/105 ,  C30B29/406 ,  G01N23/207 ,  G01N2223/602

摘要： In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride.The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed selected by the method above.

摘要翻译： 在一个实例中，本发明提供了使用通过（a）在多于一点测量晶种的x射线摇摆曲线选择的晶种来生长III族氮化物的块状晶体的方法，（b） 测量的x射线摇摆曲线，（c）评估量化峰宽度的分布。 本发明还包括选择用于生长III族氮化物的本体晶体的晶种的方法。 使用至少一种通过上述方法选择的种子，III族氮化物的块状晶体可以在超临界氨或III族金属的熔体中生长。

公开(公告)号：US20140087209A1

公开(公告)日：2014-03-27

申请号：US13833443

申请日：2013-03-15

申请人： Seoul Semiconductor Co., Ltd. ,  SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L21/02 ,  C30B7/10 ,  B28D5/04 ,  C30B29/40

CPC分类号： C30B29/406 ,  B28D5/045 ,  C30B7/10 ,  C30B7/105 ,  C30B25/20 ,  C30B29/403 ,  C30B29/64 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02628 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/32 ,  Y10S117/902 ,  Y10T428/192

摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

公开(公告)号：US20160130720A1

公开(公告)日：2016-05-12

申请号：US14981292

申请日：2015-12-28

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： C30B7/10 ,  B28D5/00 ,  H01L29/207 ,  H01L21/02 ,  H01L29/20 ,  C30B29/40 ,  B24B37/04

CPC分类号： C30B7/105 ,  B24B37/042 ,  B28D5/00 ,  C30B9/00 ,  C30B28/04 ,  C30B29/403 ,  H01L21/02013 ,  H01L21/02389 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/22

摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

摘要翻译： 本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0＆nlE; x＆nlE; 1,0＆amp; nlE; x + y＆nlE; 1）的半绝缘晶片。 半绝缘晶片的电阻率为104ohm-cm以上。 尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。 本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

公开(公告)号：US20160040318A1

公开(公告)日：2016-02-11

申请号：US14918474

申请日：2015-10-20

申请人： SIXPOINT MATERIALS, INC. ,  SEOUL SEMICONDUCTOR CO., LTD.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： C30B29/40 ,  C30B25/20 ,  H01L29/32 ,  H01L29/20 ,  H01L29/04

CPC分类号： C30B29/406 ,  B28D5/045 ,  C30B7/10 ,  C30B7/105 ,  C30B25/20 ,  C30B29/403 ,  C30B29/64 ,  C30B33/06 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02628 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/32 ,  Y10S117/902 ,  Y10T428/192

摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

摘要翻译： 本发明提供一种生长III族氮化物锭的方法。 III族氮化物晶体如GaN通过氨热法在种子的两侧生长以形成锭，并将晶锭切成晶片。 将包括第一代种子的晶片切成比其他晶片厚，使得包括第一代种子的晶片不破裂。 包括第一代晶种的晶片可以用作下一个氨热生长的种子。

公开(公告)号：US09202872B2

公开(公告)日：2015-12-01

申请号：US13834015

申请日：2013-03-15

申请人： SixPoint Materials, Inc. ,  Seoul Semiconductor Co., Ltd.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L29/20 ,  C30B7/10 ,  C30B29/40 ,  B28D5/04 ,  H01L21/02 ,  C30B29/64

CPC分类号： C30B29/406 ,  B28D5/045 ,  C30B7/10 ,  C30B7/105 ,  C30B25/20 ,  C30B29/403 ,  C30B29/64 ,  C30B33/06 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02628 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/32 ,  Y10S117/902 ,  Y10T428/192

摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

摘要翻译： 本发明提供一种生长III族氮化物锭的方法。 III族氮化物晶体如GaN通过氨热法在种子的两侧生长以形成锭，并将晶锭切成晶片。 将包括第一代种子的晶片切成比其他晶片厚，使得包括第一代种子的晶片不破裂。 包括第一代晶种的晶片可以用作下一个氨热生长的种子。

公开(公告)号：US08921231B2

公开(公告)日：2014-12-30

申请号：US13835636

申请日：2013-03-15

申请人： SixPoint Materials, Inc. ,  Seoul Semiconductor Co., Ltd.

发明人： Tadao Hashimoto ,  Edward Letts ,  Sierra Hoff

IPC分类号： H01L21/461 ,  H01L29/201 ,  H01L29/20 ,  C30B7/10 ,  C30B29/40 ,  C30B33/10 ,  H01L21/02 ,  C30B33/00

CPC分类号： H01L29/201 ,  C30B7/105 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003

摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

摘要翻译： 本发明公开了一种III族氮化物晶片，例如GaN，AlN，InN及其合金，其一面在视觉上与其他表面不同。 在用诸如多线锯的机械方法从III族氮化物的块状晶体切片晶片之后，晶片被化学蚀刻，使得晶片的一个表面在视觉上与另一表面区分开。 本发明还公开了一种制造这种晶片的方法。

公开(公告)号：US08585822B2

公开(公告)日：2013-11-19

申请号：US13728769

申请日：2012-12-27

申请人： SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Masanori Ikari ,  Edward Letts

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： G01R31/2601 ,  C30B7/10 ,  C30B29/403 ,  H01L22/20 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.