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35 条记录 (耗时 0.021 秒)

    SOLID-STATE IMAGING DEVICE
    11.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20190342512A1

    公开(公告)日：2019-11-07

    申请号：US16511876

    申请日：2019-07-15

    申请人： SONY CORPORATION

    发明人： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

    IPC分类号： H04N5/374 ,  H04N5/376 ,  H04N5/3745 ,  H04N3/14 ,  H04N5/378 ,  H04N5/335 ,  H04N9/04

    摘要： A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

    Solid-state image sensor and imaging apparatus
    12.
    发明授权
    Solid-state image sensor and imaging apparatus 有权

    公开(公告)号：US10469783B2

    公开(公告)日：2019-11-05

    申请号：US16067316

    申请日：2016-11-30

    申请人： SONY CORPORATION

    发明人： Yoshimichi Kumagai ,  Takashi Abe ,  Kazuyoshi Yamashita ,  Ryoto Yoshita

    IPC分类号： H04N5/3745 ,  H01L27/146 ,  H04N5/361 ,  H04N5/357

    摘要： To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer. The generated-charge retention gate portion applies a control voltage that is a voltage for controlling potential of the generated-charge retention portion to the generated-charge retention portion during a period of the generated-charge transfer and the retained-charge transfer, applies a bias voltage that is a voltage having a polarity different from the control voltage to the generated-charge retention portion during a period different from the period of the generated-charge transfer and the retained-charge transfer, and applies the bias voltage to the generated-charge retention portion after applying an approximately intermediate voltage between the control voltage and the bias voltage to the generated-charge retention portion at the end of the period of the retained-charge transfer.

    SOLID-STATE IMAGING DEVICE
    15.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号：US20160014304A1

    公开(公告)日：2016-01-14

    申请号：US14864169

    申请日：2015-09-24

    申请人： Sony Corporation

    发明人： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

    IPC分类号： H04N3/14 ,  H04N5/378 ,  H04N5/374 ,  H04N5/335

    CPC分类号： H04N5/374 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

    摘要： A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

    摘要翻译： 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元（30）包括两个像素（31）和（32）。 上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38） 像素（31）和（32）。 全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。 控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了 像素大小等。

    IMAGING APPARATUS, IMAGING METHOD, MANUFACTURING APPARATUS, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS
    16.
    发明申请
    IMAGING APPARATUS, IMAGING METHOD, MANUFACTURING APPARATUS, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS 有权
    成像装置，成像方法，制造装置，制造方法和电子装置

    公开(公告)号：US20150077612A1

    公开(公告)日：2015-03-19

    申请号：US14484012

    申请日：2014-09-11

    申请人： Sony Corporation

    发明人： Yoshimichi Kumagai ,  Takashi Abe ,  Kazuyoshi Yamashita

    IPC分类号： H01L27/146 ,  H04N5/355 ,  H04N5/374

    CPC分类号： H04N5/3559 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14656 ,  H01L27/14689 ,  H04N5/3597 ,  H04N5/772 ,  Y10T29/41

    摘要： There is provided an imaging apparatus that includes a photoelectric conversion section, a retention section, and first and second gates. The photoelectric conversion section is configured to convert a received light into charge. The retention section is configured to retain the charge provided by the photoelectric conversion section. The first and second gates are provided between the photoelectric conversion section and the retention section, the first and second gates being turned ON for transferring the charge from the photoelectric conversion section to the retention section, and the second gate being turned OFF after the first gate is turned OFF.

    摘要翻译： 提供了一种成像装置，其包括光电转换部分，保持部分以及第一和第二栅极。 光电转换部被配置为将接收的光转换为电荷。 保持部构造为保持由光电转换部提供的电荷。 第一和第二栅极设置在光电转换部分和保持部分之间，第一和第二栅极导通以将电荷从光电转换部分转移到保持部分，第二栅极在第一栅极之后被截止 关闭。

    Solid-state image pickup device and image pickup apparatus
    17.
    发明授权
    Solid-state image pickup device and image pickup apparatus 有权

    公开(公告)号：US11152405B2

    公开(公告)日：2021-10-19

    申请号：US16302238

    申请日：2017-04-03

    申请人： SONY CORPORATION

    发明人： Takashi Abe ,  Ikuhiro Yamamura

    IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/341 ,  H04N5/355 ,  H04N5/374

    摘要： A solid-state image pickup device includes a plurality of pixels, a pixel connection section, and a pixel reset section. The plurality of pixels each include a photoelectric conversion section that generates a charge according to irradiated light, a charge holding section that holds the generated charge, and a signal generation section that generates as an image signal a signal according to the held charge. The pixel connection section conducts between charge holding sections of the plurality of pixels and thereby allows each of the charge holding sections of the plurality of pixels to hold the charge that has been generated by the photoelectric conversion section of one pixel of the plurality of pixels. The pixel reset section discharges and resets the charge of the respective charge holding sections of the plurality of pixels when the pixel connection section conducts between the respective charge holding sections of the plurality of pixels.

    Solid state imaging device
    20.
    发明授权
    Solid state imaging device 有权
    固态成像装置

    公开(公告)号：US09185369B2

    公开(公告)日：2015-11-10

    申请号：US13910859

    申请日：2013-06-05

    申请人： SONY CORPORATION

    发明人： Takashi Abe ,  Nobuo Nakamura ,  Tomoyuki Umeda ,  Keiji Mabuchi ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

    IPC分类号： H04N5/335 ,  H04N9/04 ,  H04N3/14

    CPC分类号： H04N5/374 ,  H04N3/155 ,  H04N5/335 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045

    摘要： A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

    摘要翻译： 固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。 单位单元（30）包括两个像素（31）和（32）。 上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38） 像素（31）和（32）。 全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。 控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了 像素大小等等。