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公开(公告)号：US12043891B2
公开(公告)日：2024-07-23
申请号：US17196999
申请日：2021-03-09
Applicant: SPTS Technologies Limited
Inventor： Scott Haymore , Adrian Thomas , Steve Burgess
CPC classification number: C23C14/165 , C23C14/351 , H03H3/08 , H03H9/02047 , H03H9/02574 , H03H9/02614
Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.
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公开(公告)号：US11913109B2
公开(公告)日：2024-02-27
申请号：US16541635
申请日：2019-08-15
Applicant: SPTS Technologies Limited
Inventor： Tony Wilby , Steve Burgess , Adrian Thomas , Rhonda Hyndman , Scott Haymore , Clive Widdicks , Ian Moncrieff
CPC classification number: C23C14/50 , C23C14/345 , C23C14/3485 , C23C14/35 , C23C14/351 , C23C14/505 , H01J37/32715 , H01J37/3405 , H01J37/3452 , H01J37/3455 , H01J37/3467 , C23C14/542
Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.
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公开(公告)号：US11718908B2
公开(公告)日：2023-08-08
申请号：US17241237
申请日：2021-04-27
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： Scott Haymore , Amit Rastogi , Rhonda Hyndman , Steve Burgess , Ian Moncrieff
CPC classification number: C23C14/505 , C23C14/345 , C23C14/3407 , C23C14/3485 , C23C14/35 , C23C14/50 , C23C14/541 , H01J37/32715 , H01J37/3405 , H01J37/3411 , H01J37/3467 , C23C14/0617 , C23C14/0641 , H01J37/3426
Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.
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公开(公告)号：US20210317565A1
公开(公告)日：2021-10-14
申请号：US17196999
申请日：2021-03-09
Applicant: SPTS Technologies Limited
Inventor： Scott Haymore , Adrian Thomas , Steve Burgess
Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.
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