Plasma etching apparatus
    2.
    发明授权

    公开(公告)号:US10153135B2

    公开(公告)日:2018-12-11

    申请号:US15190722

    申请日:2016-06-23

    Abstract: An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.

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