公开(公告)号：US11913109B2

公开(公告)日：2024-02-27

申请号：US16541635

申请日：2019-08-15

Applicant: SPTS Technologies Limited

Inventor： Tony Wilby ,  Steve Burgess ,  Adrian Thomas ,  Rhonda Hyndman ,  Scott Haymore ,  Clive Widdicks ,  Ian Moncrieff

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/50 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3467 ,  C23C14/542

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

公开(公告)号：US11718908B2

公开(公告)日：2023-08-08

申请号：US17241237

申请日：2021-04-27

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Scott Haymore ,  Amit Rastogi ,  Rhonda Hyndman ,  Steve Burgess ,  Ian Moncrieff

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/06 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/505 ,  C23C14/345 ,  C23C14/3407 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3467 ,  C23C14/0617 ,  C23C14/0641 ,  H01J37/3426

Abstract: A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.

公开(公告)号：US20210317565A1

公开(公告)日：2021-10-14

申请号：US17196999

申请日：2021-03-09

Applicant: SPTS Technologies Limited

Inventor： Scott Haymore ,  Adrian Thomas ,  Steve Burgess

IPC: C23C14/16 ,  H03H3/08 ,  H03H9/02 ,  C23C14/35

Abstract: Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.

公开(公告)号：US10601388B2

公开(公告)日：2020-03-24

申请号：US15286283

申请日：2016-10-05

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Stephen R Burgess ,  Rhonda Hyndman ,  Amit Rastogi ,  Scott Haymore ,  Constanine Fragos

IPC: H02H3/02 ,  C23C14/00 ,  C23C14/34 ,  C23C14/06 ,  C23C14/14 ,  H03H9/02 ,  H03H3/02

Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.